EDI CRVT High voltage silicon rectifier Datasheet

CRVT
H I G H V O L TA G E
SILICON RECTIFIERS
SMALL SIZE MOLDED PACKAGE
PRV 15,000 TO 30,000 VOLTS
FAST RECOVERY
AVALANCHE CHARACTERISTICS
LOW LEAKAGE
EDI
Type
PRV
( Volts )
REVERSE RECOVERY TIME
o
IN NANOSECONDS @25 C
(Fig.4)
CRVT 150
15,000
100
35 Volts
CRVT 200
20,000
100
35 Volts
CRVT 250
25,000
100
35 Volts
CRVT 300
30,000
100
48 Volts
MAXIMUM FORW ARD
VOLTAGE DROP
@25mA
ELECTRICAL CHARACTERISTICS (at TA=25 o C Unless Otherwise Specified)
o
Average Rectified Forward Current @ 75 C, (Fig.1)
25 mA
Max Peak Surge Current (8.3ms) (Fig.2)
3 Amp
o
Max DC Reverse Current @ PRV and 25 C
1
o
Max DC Reverse Current @ PRV and 100 C
25
A
A
o
o
o
o
Ambient Operating Temperature Range
-55 C to +125 C
Storage Temperature Range
-55 C to +150 C
NOTES:
1.It is recommended that a proper heat sink be used on the terminals of this device between the body and
soldering point to prevent damage from excess heat.
2.If operated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated.
EDI reserves the right to change these specifications at any time without notice.
CRVT
FIG.1
FIG.2
OUTPUT CURRENT vs AMBIENT TEMPERATURE
NON- REPETITIVE SURGE CURRENT
0.1SEC
1.0SEC
100
% MAXIMUM SURGE
% RATED FWD CURRENT
100
75
50
25
0
75
50
25
0
0
25
50
75
100
125
1
150
3
2
4
O
AMBIENT TEMPERATURE ( C)
5 6 7 8 9 10
20
30
40 50 60
CYCLES(60 Hz)
FIG.3
INCHES
A LEAD DIA.
MECHANICAL
D
SOLDER DIPPED COPPER LEADS
C
MIN.
B
MM
A
0.02
0.5
B
0.60
15.2
C
1.00
25.4
D
0.16
4.0
FIG.4
REVERSE RECOVERY TEST METHOD
RECOVERY WAVE FORM
RECOVERY WA VE FORM
1000
Trr
NI
D.U.T.
+
0.1
I F=2MA
I RR=1MA
I R=5MA
-
PULSE
GENERATOR
WAVE FORMS
50
NI
SCOPE
CIRCUIT
EDI reserves the right to change these specifications at any time without notice.
ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
21 GRAY OAKS AVENUE
* YONKERS. NEW YORK 10710 914-965-4400
Ee-mail:[email protected] *Wwebsite:http:// www.edidiodes.com
* FAX 914-965-5531
* 1-800-678-0828
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