Diodes SMD Type Switching Diodes MMBD4448HCQW/HAQW/HADW/HCDW/HSDW/HTW (KMBD4448HCQW/HAQW/HADW/HCDW/HSDW/HTW) ■ Features ● Fast Switching Speed ● For General Purpose Switching Applications. ● High Conductance, Power Dissipation ● Epoxy meets UL 94 V-0 flammability rating ● Moisture Sensitivity Level 1 A1 C A2 C1 A C2 A1 C2 C2 A4 NC A3 C4 NC C3 C1 C1 A2 MMBD4448HCQW C1 A2 A2 A1 A1 C2 MMBD4448HAQW AC 1 A1 MMBD4448HCDW MMBD4448HADW C2 A2 C1 C2 C3 C1 AC A1 A2 A3 2 MMBD4448HSDW MMBD4448HTW ■ Absolute Maximum Ratings Ta = 25℃ Parameter Reverse Voltage Symbol Rating VRM 100 Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage RMS Reverse Voltage 80 VR(RMS) 57 IO 250 Forward Continuous Current IFM 500 Peak Forward Surge Current @ t=1us Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range V VR Average Rectified Output Current Peak Forward Surge Current @ t=1s Unit IFSM 4 1.5 mA A Pd 200 mW RθJA 625 ℃/W TJ 150 Tstg -65 to 150 ℃ www.kexin.com.cn 1 Diodes SMD Type Switching Diodes MMBD4448HCQW/HAQW/HADW/HCDW/HSDW/HTW (KMBD4448HCQW/HAQW/HADW/HCDW/HSDW/HTW) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Reverse breakdown voltage Test Conditions Min Typ Max Unit VR IR= 100 uA 100 VF1 IF= 5 mA 0.62 VF2 IF= 10 mA 0.855 VF3 IF= 50 mA 1 VF4 IF= 150 mA 1.25 IR1 VR= 70 V 100 IR2 VR= 75 V , TJ = 150℃ 50 IR3 VR= 25 V , TJ = 150℃ 30 IR4 VR=20V 25 nA Junction capacitance Cj VR= 6 V, f= 1 MHz 3.5 pF Reverse recovery time trr IF=5mA,VR=6V 4 ns Forward voltage Reverse voltage leakage current 0.72 V nA uA ■ Marking NO. MMBD4448 HCQW MMBD4448 HAQW MMBD4448 HADW MMBD4448 HCDW MMBD4448 HSDW MMBD4448 HTW Marking KA4 KA5 KA6 KA7 KAB KAA 1000 IR, INSTANTANEOUS REVERSE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) ■ Typical Characterisitics 100 10 T A = -40ºC T A = 0ºC T A = 25ºC 1 T A = 75ºC T A = 125ºC 0.1 0 0.4 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics 2 www.kexin.com.cn 10000 T A = 125ºC 1000 T A = 75ºC 100 T A = 25ºC 10 T A = 0ºC 1 T A = -40ºC 0.1 0 20 40 60 80 VR, REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 100 Diodes SMD Type Switching Diodes MMBD4448HCQW/HAQW/HADW/HCDW/HSDW/HTW (KMBD4448HCQW/HAQW/HADW/HCDW/HSDW/HTW) ■ Typical Characterisitics 250 3 f = 1MHz Pd , POWER DISSIPATION (mW) CT, TOTAL CAPACITANCE (pF) 2.5 2 1.5 1 0.5 0 200 150 100 50 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance vs. Reverse Voltage 0 100 200 TA, AMBIENT TEMPERATURE (°C) Fig. 4 Power Derating Curve, Total Package Trr, REVERSE RECOVERY TIME (nS) 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 IF, FORWARD CURRENT (mA) Fig. 5 Reverse Recovery Time vs. Forward Current www.kexin.com.cn 3