EC733615 -30V、 、-10A P-Channel MOSFET Description The EC733615 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Features and Benefits: ◆ VDS = -30V,ID =-10A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 14mΩ @ VGS=-10V ◆ High Power and current handing capability ◆ Lead free product is acquired Pin Assignment ◆ Surface Mount Package Application ◆ PWM applications ◆ Load switch ◆ Power management Absolute Maximum Ratings (TA=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V ID(25℃) -8 A ID(70℃) -6 A IDM -80 A PD 3.1 W TJ,TSTG -55 To 150 ℃ RθJA 40 Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance Thermal Resistance, Junction-Ambient (Note 2) E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 6 /W 4K25N-Rev.F001 EC733615 -30V、 、-10A P-Channel MOSFET Electrical Characteristics (TA=25 Parameter unless otherwise noted) Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250µA -30 Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V -1 uA Gate-Body Leakage Current IGSS VGS=±25V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250µA -2.2 -3 V Drain-Source On-State Resistance RDS(ON) VGS=-4.5V, ID=-7A 20 25 mΩ VGS=-10V, ID=-10A 12 14 mΩ VDS=-5V,ID=-10A 18 S 1200 PF 240 PF 150 PF 9 nS 8.5 nS 20 nS 8 nS 18 nC 5 nC 3.5 nC 24 nS 12 nC OFF CHARACTERISTICS V ON CHARACTERISTICS (Note 3) Forward Transconductance gFS -1.7 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V, F=1.0MHz SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Body Diode Reverse Recovery Time Trr Body Diode Reverse Recovery Qrr Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VDS=-15V,VGS=-10V, RGEN=3Ω ID=1A VDS=-15V,ID=-10A, VGS=-10V IF=-10A, dI/dt=100A/µs VGS=0V,IS=-1A -0.74 -1 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 6 4K25N-Rev.F001 V -30V、 、-10A P-Channel MOSFET EC733615 Typical electrical and thermal characteristics E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 6 4K25N-Rev.F001 -30V、 、-10A P-Channel MOSFET E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 6 EC733615 4K25N-Rev.F001 -30V、 、-10A P-Channel MOSFET EC733615 Ordering and Marking Information EC733615 XX X R： ：Tape & Reel M1＝ ＝SOP 8L E-CMOS Corp. (www.ecmos.com.tw) Page 5 of 6 4K25N-Rev.F001 -30V、 、-10A P-Channel MOSFET Part Number Package Marking EC733615M1R SOP 8L 733615 LLLLL YYWW EC733615 SOP 8L Package Outline Dimension E-CMOS Corp. (www.ecmos.com.tw) Page 6 of 6 4K25N-Rev.F001