TEL MCR100-4 Silicon controlled rectifier Datasheet

MCR100 SERIES
Silicon Controlled Rectifier
VRRM = 100-600V, IF(RMS) = 0.8A
G
K
A
Symbol
MAXIMUM RATINGS
(Tj = 25 OC unless stated otherwise)
Symbol
MCR100-3
MCR100-4
MCR100-6
MCR100-8
Parameter
Repetitive Peak Off-State Voltage
VRRM
On-State RMS Current
IT(RMS)
Peak Non-Repetitive Surge Current
ITSM
100
200
400
600
0.8 at tc = 85 C
Unit
Volt
Amp
O
10
Amp
I2T
0.415
A2/S
VGRM
5
Volt
Peak Gate Current
IGM
0.1
Amp
Forward Average Gate Power
PG(AV)
0.1
Watt
Forward Peak Gate Power
PGM
1.0
Watt
Maximum Storage Temperature Range
T(STG)
-40 to +150
Maximum Junction Temperature Range
Tj
-40 to +110
I 2T for Fusing 8.3ms
Peak Reverse Gate Voltage
ELECTRICAL CHARACTERISICS at
C
O
C
O
Tj = 25 C Maximum. Unless stated Otherwise
Value
Condition
Parameter
Min
Symbol
Peak Forward On-State Voltage
Typ
Max
Unit
VTM
ITM = 1.0 Amps
Repetitive Peak Reverse Current
IRRM
VR = VRRM. tJ=110OC
Gate Trigger Voltage
VGT
0.62
0.80
Volt
Gate Trigger Current
IGT
40
200
µA
mA
1.7
100
Latch Current
IL
0.60
10.0
Holding Current
IH
0.50
5.0
RTH (J-c)
Thermal Resistance (Junction to Case)
Rate of Rise of Off-State Voltage
dV/dt
Rate of Rise of Off-State Current
dA/dt
75
20
0.165(4.19) max
0.125(3.18) min
0.205(5.20) max
0.175 (4.45) min
1
Cathode
2
Gate
3
Anode
1
2
3
35
0.210(5.33) max
0.170 (4.32) min
Case:TO - 92
0.500(12.70) min
0.021(50.533) max
0.016 (0.407) min
0.055(1.39) max
0.045 (1.15) min
0.055(1.39) max
0.045 (1.15) min
0.135(3.43) min
All Dimensions in Inches (Millimeters)
Third Angle Projection
0.105(2.66) max
0.080(2.04) min
mA
C/W
O
V/µS
50
Mechanical Outline
Volt
A/µS
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