CATV 22 dB PUSH-PULL AMPLIFIER MC-7856 OUTLINE DIMENSIONS (Units in mm) FEATURES • GALLIUM ARSENIDE ACTIVE DEVICES PACKAGE OUTLINE • LOW DISTORTION • LOW NOISE FIGURE (5.7 dB TYP at 860 MHz) • HIGH RELIABILITY (FIT = 125 at heat sink temperature of 100°C, Report available) • INDUSTRY COMPATIBLE PACKAGE 45.08 MAX 38.1±0.25 27.5 MAX 2.41 MAX 4.25 + 0.25 - 0.35 VDD 5 14.85 MAX 4.0±0.25 8.1 MAX 1 9 In Out 6-32 unc 2B 25.4±0.25 2 3 7 8 2.54±0.25 0.25±0.05 Gnd 21.5 MAX The MC-7856 is a GaAs hybrid integrated circuit designed to be used as the input device in CATV applications up to 860 MHz. This unit has a minimum gain of 21.5 dB at 860 MHz, and because it is a GaAs device, it has lower distortion and lower noise figure. Reliability is assured by NEC's stringent quality and process control procedures. Devices are assembled and tested using fully automated equipment to maximize the consistency in part to part performance. 5 7 8 9 12.9 MAX 10.75 ±0.25 1.86±0.25 1 2 3 DESCRIPTION 4.19±0.13 2.54 ±0.38 0.45±0.05 ELECTRICAL CHARACTERISTICS (TCASE = 30 °C, VDD = 24 V, ZS = ZI = 75 Ω) PART NUMBER PARAMETERS SYMBOLS UNITS MIN MC-7856 TYP MAX CONDITIONS BW Frequency Range MHz 50 860 GA Gain dB 21.5 23.0 f = 860 MHz S Gain Slope dB 0 2.0 50 to 860 MHz 1.0 50 to 860 MHz; Peak to Valley Gf Gain Flatness dB S11 Input Return Loss dB dB dB dB 18.0 17.0 16.0 14.5 50 to 160 MHz 160 to 320 MHz 320 to 640 MHz 640 to 860 MHz S22 Output Return Loss dB dB dB dB 18.0 17.0 16.0 14.5 50 to 160 MHz 160 to 320 MHz 320 to 640 MHz 640 to 860 MHz 30 S12 Reverse Isolation dB CTB Composite Triple Beat,110 Channels dB -60 -55 50 to 860 MHz VOUT = +44 dBmV/ch CSO Composite Second Order, 110 Channels dB -63 -55 VOUT = +44 dBmV/ch XMod VOUT = +44 dBmV/ch Cross Modulation, 110 Channels dB -63 -55 IDD DC Current mA 220 240 NF Noise Figure dB 5.3 6.2 50 MHz dB 5.7 6.5 860 MHz California Eastern Laboratories MC-7856 ABSOLUTE MAXIMUM RATINGS1 (TCASE= 30 °C) SYMBOLS PARAMETERS Supply Voltage VDD Input Voltage (Single Tone) VI UNITS RATINGS V 30 dBmV 65 TOP Operating Temperature °C -30 to +100 TSTG Storage Temperature °C -40 to +100 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL SCATTERING PARAMETERS j50 90˚ 120˚ j100 j25 60˚ 150˚ 30˚ j10 0 S12 180˚ 0 S22 S21 0˚ S11 -j10 -150˚ -30˚ -j100 -j25 -120˚ -j50 -60˚ S21 MAG: 3.0/DIV., 15.00 FS S12 MAG: 0.01/DIV., 0.05 FS -90˚ VDD = 24 V FREQUENCY (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 S11 S21 MAG ANG 0.062 0.045 0.021 0.004 0.029 0.058 0.074 0.090 0.085 0.076 0.059 0.046 0.066 0.100 0.132 0.166 0.191 0.205 0.196 0.220 0.230 -165.50 172.50 157.40 18.36 -34.03 -41.26 -50.82 -60.98 -68.92 -74.96 -68.85 -37.75 -19.04 -13.28 -23.52 -34.35 -47.19 -66.62 -76.91 -89.62 -102.30 MAG 11.74 11.89 11.94 11.97 12.06 12.08 12.10 12.15 12.23 12.34 12.45 12.55 12.60 12.63 12.76 13.03 13.43 13.78 13.63 13.48 13.34 S12 S22 ANG MAG ANG MAG ANG -3.982 -31.570 -54.300 -75.840 -96.820 -117.700 -139.100 -159.400 179.300 158.200 136.600 114.600 92.660 70.410 48.250 25.370 1.254 -25.040 -51.960 -78.880 -108.200 0.014 0.014 0.013 0.013 0.013 0.012 0.012 0.012 0.012 0.013 0.013 0.013 0.014 0.014 0.014 0.013 0.013 0.012 0.010 0.008 0.006 -0.058 -23.830 -43.140 -62.090 -80.690 -99.360 -118.600 -138.000 -157.700 -177.100 163.600 145.800 128.900 112.700 96.990 82.490 67.470 49.570 28.770 13.240 -6.116 0.026 0.049 0.078 0.098 0.119 0.134 0.137 0.137 0.116 0.092 0.057 0.036 0.047 0.086 0.109 0.130 0.138 0.136 0.146 0.184 0.210 17.30 -31.51 -52.40 -65.99 -78.34 -87.61 -100.70 -111.90 -127.80 -147.00 -174.80 115.30 42.64 10.89 -18.20 -42.31 -70.14 -97.72 -111.30 -134.80 -154.40 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 4/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE