NP Series Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional NP Series Thyristor Surge Protector Devices (TSPD) protect telecommunication circuits such as central office, access, and customer premises equipment from overvoltage conditions. These are bidirectional devices so they are able to have functionality of 2 devices in one package, saving valuable space on board layout. These devices will act as a crowbar when overvoltage occurs and will divert the energy away from circuit or device that is being protected. Use of the NP Series in equipment will help meet various regulatory requirements including: GR−1089−CORE, IEC 61000−4−5, ITU K.20/21/45, IEC 60950, TIA−968−A, FCC Part 68, EN 60950, UL 1950. ELECTRICAL PARAMETERS http://onsemi.com BIDIRECTIONAL SURFACE MOUNT THYRISTOR 64 − 350 VOLTS MT1 VDRM V(BO) VT IDRM I(BO) IT IH Device V V V mA mA A mA NP0640SxT3G 58 77 4 5 800 2.2 150 NP0720SxT3G 65 88 4 5 800 2.2 150 NP0900SxT3G 75 98 4 5 800 2.2 150 NP1100SxT3G 90 130 4 5 800 2.2 150 NP1300SxT3G 120 160 4 5 800 2.2 150 NP1500SxT3G 140 180 4 5 800 2.2 150 NP1800SxT3G 170 220 4 5 800 2.2 150 NP2100SxT3G 180 240 4 5 800 2.2 150 NP2300SxT3G 190 260 4 5 800 2.2 150 NP2600SxT3G 220 300 4 5 800 2.2 150 NP3100SxT3G 275 350 4 5 800 2.2 150 NP3500SxT3G 320 400 4 5 800 2.2 150 G = indicates leadfree, RoHS compliant MT2 SMB JEDEC DO−214AA CASE 403C MARKING DIAGRAM AYWW xxxxG G xxxx = Specific Device Code Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) SURGE DATA RATINGS Waveform * x = series ratings ORDERING INFORMATION Specification Voltage ms Current ms A B C Unit GR−1089−CORE 2x10 2x10 150 250 500 A(pk) IEC 61000−4−5 1.2x50 8x20 150 250 400 TIA−968−A 10x160 10x160 90 150 200 GR−1089−CORE 10x360 10x360 75 125 175 TIA−968−A 10x560 10x560 50 100 150 ITU−T K.20/21 10x700 5x310 75 100 200 GR−1089−CORE 10x1000 10x1000 50 80 100 See detailed ordering and shipping information on page 4 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Recognized Components © Semiconductor Components Industries, LLC, 2006 November, 2006 − Rev. 0 1 Publication Order Number: NP0640S/D NP Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics (Note 1) Symbol Breakover Voltage (Both Polarities) Min Typ Unit V NP0640SxT3G NP0720SxT3G NP0900SxT3G NP1100SxT3G NP1300SxT3G NP1500SxT3G NP1800SxT3G NP2100SxT3G NP2300SxT3G NP2600SxT3G NP3100SxT3G NP3500SxT3G 77 88 98 130 160 180 220 240 260 300 350 400 Off−State Voltage (Both Polarities) VDRM NP0640SxT3G NP0720SxT3G NP0900SxT3G NP1100SxT3G NP1300SxT3G NP1500SxT3G NP1800SxT3G NP2100SxT3G NP2300SxT3G NP2600SxT3G NP3100SxT3G NP3500SxT3G Off State Current Max V(BO) V 58 65 75 90 120 140 170 180 190 220 275 320 ( VD1 = 50 V ) Both Polarities ( VD2 = VDRM ) Both Polarities IDRM1 IDRM2 2.0 5.0 mA mA Holding Current (Both Polarities) (Note 4) VS = 500 V; IT = 2.2 A IH 150 250 − mA On−State Voltage IT = 1.0 A(pk) (PW = 300 mSec, DC = 2%) VT − − 4.0 V Maximum Non−Repetitive Rate of Change of On−State Current (Note 1) (Haefely test method, 1.0 pk < 100 A) di/dt − − 500 A/mSec Critical Rate of Rise of Off−State Voltage (Linear Waveform, VD = 0.8 VDRM, TJ = 25°C) dv/dt 5.0 − − kV/mSec Unit CAPACITANCE Typ Characteristics Symbol (f=1.0 MHz, 1.0 Vrms, 2 Vdc bias) NP0640SxT3G NP0720SxT3G NP0900SxT3G NP1100SxT3G NP1300SxT3G NP1500SxT3G NP1800SxT3G NP2100SxT3G NP2300SxT3G NP2600SxT3G NP3100SxT3G NP3500SxT3G 1. 2. 3. 4. A B C 70 70 70 70 60 60 60 60 40 40 40 40 125 125 125 125 100 100 100 100 60 60 60 60 210 210 210 210 180 180 180 180 100 100 100 100 Co Electrical parameters are based on pulsed test methods. di/dt must not be exceeded of a maximum of 100 A/mSec in this application. Measured under pulsed conditions to reduce heating Allow cooling before testing second polarity. http://onsemi.com 2 pF NP Series SURGE RATINGS Characteristics Symbol Nominal Pulse Surge Short Circuit Current Non – Repetitive Double Exponential Decay Waveform (Notes 5, 6 and 7) 2 x 10 mSec 8 x 20 mSec 10 x 160 mSec 10 x 360 mSec 10 x 560 mSec 10 x 700 mSec 10 x 1000 mSec A B C Unit A(pk) IPPS1 IPPS2 IPPS3 IPPS4 IPPS5 IPPS6 IPPS7 150 150 90 75 50 75 50 250 250 150 125 100 100 80 500 400 200 150 150 200 100 5. Allow cooling before testing second polarity. 6. Measured under pulse conditions to reduce heating. 7. Nominal values may not represent the maximum capability of a device. Ipp − PEAK PULSE CURRENT − %Ipp +I Peak Value 100 IT tr = rise time to peak value tf = decay time to half value I(BO) IH −Voltage Half Value 50 +Voltage VT VDRM V(BO) 0 0 tr tf TIME (ms) −I Figure 2. Voltage Current Characteristics of TSPD Figure 1. Exponential Decay Pulse Waveform Symbol Parameter VDRM Peak Off State Voltage V(BO) Breakover Voltage I(BO) Breakover Current IH Holding Current VT On State Voltage IT On State Current http://onsemi.com 3 NP Series ORDERING INFORMATION Part Number Case Shipping † SMB (Pb−Free) 2500 / Tape and Reel Marking NP0640SAT3G 064A NP0640SBT3G 064B NP0640SCT3G 064C NP0720SAT3G 072A NP0720SBT3G 072B NP0720SCT3G 072C NP0900SAT3G 090A NP0900SBT3G 090B NP0900SCT3G 090C NP1100SAT3G 110A NP1100SBT3G 110B NP1100SCT3G 110C NP1300SAT3G 130A NP1300SBT3G 130B NP1300SCT3G 130C NP1500SAT3G 150A NP1500SBT3G 150B NP1500SCT3G 150C NP1800SAT3G 180A NP1800SBT3G 180B NP1800SCT3G 180C NP2100SAT3G 210A NP2100SBT3G 210B NP2100SCT3G 210C NP2300SAT3G 230A NP2300SBT3G 230B NP2300SCT3G 230C NP2600SAT3G 260A NP2600SBT3G 260B NP2600SCT3G 260C NP3100SAT3G 310A NP3100SBT3G 310B NP3100SCT3G 310C NP3500SAT3G 350A NP3500SBT3G 350B NP3500SCT3G 350C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NP Series PACKAGE DIMENSIONS SMB CASE 403C−01 ISSUE A S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. A D INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 B C K J P MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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