Hittite HMC-C003 Wideband power amplifier module, 2 - 20 ghz Datasheet

HMC-C003
v01.1105
WIDEBAND POWER AMPLIFIER
MODULE, 2 - 20 GHz
AMPLIFIERS - CONNECTORIZED MODULES
9
Features
P1dB Output Power: +26 dBm @ 10 GHz
Output IP3: +30 dBm
Gain: 15 dB
50 Ohm Matched Input/Output
Regulated Supply and Bias Sequencing
Typical Applications
Hermetically Sealed Module
The HMC-C003 Wideband PA is ideal for:
Field Replaceable SMA connectors
• Telecom Infrastructure
-55 to +85˚C Operating Temperature
• Microwave Radio & VSAT
• Military & Space
General Description
• Test Instrumentation
The HMC-C003 is a GaAs MMIC PHEMT Distributed
Power Amplifier in a miniature, hermetic module with
replaceable SMA connectors which operates between
2 and 20 GHz. The self-biased amplifier provides 15
dB of gain, +30 dBm output IP3 and up to +26 dBm of
output power at 1 dB gain compression while requiring a single +12V supply. Gain flatness is excellent
from 2 - 18 GHz making the HMC-C003 ideal for EW,
ECM RADAR and test equipment applications. The
wideband amplifier I/Os are internally matched to 50
Ohms and are internally DC blocked.
• Fiber Optics
Functional Diagram
Electrical Specifications, TA = +25° C, Vs= +11.6V to +12.4V
Parameter
Min.
Frequency Range
Gain
13
Max.
Min.
±.025
Gain Variation Over Temperature
0.02
Typ.
Max.
Min.
6.0 - 18.0
15
Gain Flatness
11
14
9
±0.75
0.03
0.02
Typ.
Max.
GHz
12
dB
±1.0
0.03
Units
18.0 - 20.0
0.02
dB
0.03
dB/ °C
Noise Figure
4.0
4.0
6.0
dB
Input Return Loss
17
18
10
dB
Output Return Loss
12
10
12
dB
Output Power for 1 dB Compression (P1dB)
9 - 10
Typ.
2.0 - 6.0
22
dBm
Saturated Output Power (Psat)
23
27
26
20
25
24
19
23
dBm
Output Third Order Intercept (IP3)
34
30
25
dBm
Spurious Response
-50
-60
-60
dBc
Supply Current
310
310
310
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-C003
v01.1105
WIDEBAND POWER AMPLIFIER
MODULE, 2 - 20 GHz
20
15
18
10
16
5
14
S21
0
S11
-5
S22
-10
12
10
8
+25 C
-15
6
+85 C
-20
4
-55 C
-25
2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
0
2
4
6
FREQUENCY (GHz)
Input Return Loss vs. Temperature
10
12
14
16
18
20
22
Output Return Loss vs. Temperature
0
0
-5
+25 C
+85 C
-55 C
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
8
FREQUENCY (GHz)
+25 C
+85 C
-55 C
-10
-15
-20
-10
-15
-20
-25
-30
-25
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
8
10
12
14
16
18
20
22
16
18
20
22
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
AMPLIFIERS - CONNECTORIZED MODULES
20
-30
Noise Figure
0
10
9
-10
+25 C
+85 C
-55 C
-20
8
NOISE FIGURE (dB)
ISOLATION (dB)
9
Gain vs. Temperature
GAIN (dB)
RESPONSE (dB)
Gain & Return Loss
-30
-40
-50
7
6
5
4
3
2
-60
1
-70
0
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
16
18
20
22
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 11
HMC-C003
v01.1105
9 - 12
Psat vs. Temperature
30
30
28
28
26
26
24
24
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature
22
20
+25 C
18
+85 C
16
-55 C
22
20
+25 C
18
+85 C
16
-55 C
14
14
12
12
10
10
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Absolute Maximum Ratings
Output IP3 vs. Temperature
38
36
34
OIP3 (dBm)
AMPLIFIERS - CONNECTORIZED MODULES
9
WIDEBAND POWER AMPLIFIER
MODULE, 2 - 20 GHz
Bias Supply Voltage (Vs)
+11 Vdc to +13 Vdc
RF Input Power (RFin)
+23 dBm
32
Storage Temperature
-65 to +150 °C
30
Operating Temperature
-55 to +85 °C
28
26
+25 C
+85 C
-55 C
24
22
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
20
18
16
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Pin Descriptions
Pin Number
Function
Description
1
RFIN &
RF Ground
RF input connector, SMA female, field replaceable.
This pin is AC coupled and matched to 50 Ohms
from 2.0 - 20.0 GHz.
2
Vs
Power supply voltage for the amplifier.
3
RFOUT &
RF Ground
RF output connector, SMA female. This pin is AC coupled
and matched to 50 Ohms from 2.0 - 20.0 GHz.
4
GND
Power supply ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-C003
v01.1105
WIDEBAND POWER AMPLIFIER
MODULE, 2 - 20 GHz
9
AMPLIFIERS - CONNECTORIZED MODULES
Outline Drawing
NOTES:
1. PACKAGE, LEADS, COVER MATERIAL: KOVAR™
2. BRACKET MATERIAL: ALUMINUM
3. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN., OVER
ELECTROLYTIC NICKEL 75 MICROINCHES MIN.
4. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. TOLERANCES ±.005 [0.13] UNLESS OTHERWISE SPECIFIED.
6. FIELD REPLACEABLE SMA CONNECTORS.
TENSOLITE 5602 - 5CCSF OR EQUIVALENT.
7. TO MOUNT MODULE TO SYSTEM PLATFORM REPLACE 0 -80
HARDWARE WITH DESIRED MOUNTING SCREWS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 13
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