ASB ASW103 Mmic amplifier Datasheet

ASW103
5 ~ 4000 MHz MMIC Amplifier
Features
Description
 17 dB Gain at 900 MHz
The ASW103, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems
up to 4 GHz. The amplifier is available in a SOT89
package and passes through the stringent DC, RF,
and reliability tests.
 17 dBm P1dB at 900 MHz
 30 dBm Output IP3 at 900 MHz
 3.7 dB NF at 900 MHz
 MTTF > 100 Years
 Single Supply
ASW103
Package Style: SOT89
Typical Performance
(Supply Voltage = +3.3 V, TA = +25 C, Zo = 50 )
Application Circuit
Parameters
Units
Typical
Frequency
MHz
900
2000
Gain
dB
17
11
S11
dB
-9
-9
 IF (+3.4 V)
dB
-15
-15
 IF (100 ~350MHz), +5V & 50mA
dBm
30
31
Noise Figure
dB
3.7
3.9
 500 ~ 2500 MHz
Output P1dB
dBm
17
18
Current
mA
44
44
Device Voltage
V
+3.3
+3.3
S22
Output IP3
1)
 IF
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
Product Specifications
Parameters
Units
Min
Typ
Testing Frequency
MHz
Gain
dB
S11
dB
S22
dB
Output IP3
dBm
Noise Figure
dB
Output P1dB
dBm
16
17
Current
mA
39
44
Device Voltage
V
Max
900
16
17
-9
-15
29
30
3.7
4.0
49
+3.3
Pin Configuration
Absolute Maximum Ratings
Parameters
Rating
Operating Case Temperature
-40 to 85 C
Storage Temperature
-40 to 150 C
Pin No.
Function
Device Voltage
+4 V
1
RF IN
Operating Junction Temperature
+150 C
Input RF Power (CW, 50  matched)*
+25 dBm
2
GND
Thermal Resistance
210 C/W
3
RF OUT & Bias
Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/8
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
ASW103
5 ~ 4000 MHz MMIC Amplifier
Outline Drawing
Part No.
Lot No.
Symbols
A
L
b
b1
C
D
D1
E
E1
e1
H
S
e
ASW103
Pxxxx
Dimensions (In mm)
MIN
NOM
1.40
1.50
0.89
1.04
0.36
0.42
0.41
0.47
0.38
0.40
4.40
4.50
1.40
1.60
3.64
--2.40
2.50
2.90
3.00
0.35
0.40
0.65
0.75
1.40
1.50
Pin No.
Function
1
RF IN
2
GND
3
RF OUT / Bias
MAX
1.60
1.20
0.48
0.53
0.43
4.60
1.75
4.25
2.60
3.10
0.45
0.85
1.60
Mounting Recommendation (In mm)
Note: 1. The number and size of ground via holes in
a circuit board is critical for thermal and RF
grounding considerations.
2. We recommend that the ground via holes
be placed on the bottom of the lead pin 2
and exposed pad of the device for better RF
and thermal performance, as shown in the
drawing at the left side.
ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
Class 1B
Voltage Level: 500 V~1000 V
MM
Class A
Voltage Level: < 200 V
CAUTION: ESD-sensitive device!
Moisture Sensitivity Level (MSL)
Level 3 at 260 C reflow
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ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
ASW103
5 ~ 4000 MHz MMIC Amplifier
APPLICATION CIRCUIT
IF
Frequency (MHz)
5
150
300
450
Magnitude S21 (dB)
25
24
23
21
Magnitude S11 (dB)
-15
-14
-12
-11
Magnitude S22 (dB)
-13
-15
-14
-14
Output P1dB (dBm)
17
17
17
17
Output IP3 (dBm)
29.0
30.0
30.5
30.0
Noise Figure (dB)
3.5
3.8
4.0
3.7
Device Voltage (V)
+3.3
Current (mA)
44
1)
5 ~ 450 MHz
+3.3 V
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=3.3 V
D1=5.6V
Zener Diode
C4=1 F
C3=100 pF
L1=1 
R1=2.7 k
C1=1 F
RF IN
C2=1 F
RF OUT
ASW103
S-parameters & K-factor
30
0
25
-5
S11 (dB)
Gain (dB)
20
15
-10
10
-15
5
0
0
100
200
300
400
500
-20
0
100
200
Frequency (MHz)
300
400
500
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
3
2
-15
1
-20
0
100
200
300
400
500
0
0
500
Frequency (MHz)
3/8
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
ASW103
5 ~ 4000 MHz MMIC Amplifier
APPLICATION CIRCUIT
IF
Frequency (MHz)
70
150
Magnitude S21 (dB)
25
24
Magnitude S11 (dB)
-14
-14
Magnitude S22 (dB)
-15
-15
Output P1dB (dBm)
17.5
18.0
Output IP3 (dBm)
30.0
31.5
Noise Figure (dB)
4.1
4.3
Device Voltage (V)
+3.4
Current (mA)
50
1)
5 ~ 450 MHz
+3.4 V
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=3.4 V
D1=5.6V
Zener Diode
C4=1 F
C3=100 pF
L1=680 nH
R1=2.7 k
C1=1000 pF
RF IN
C2=1000 pF
RF OUT
ASW103
S-parameters & K-factor
30
0
25
-5
S11 (dB)
Gain (dB)
20
15
-10
10
-15
5
0
0
100
200
300
400
500
-20
0
100
200
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
-20
-25
400
500
3
2
1
0
100
200
300
400
500
0
0
500
Frequency (MHz)
4/8
300
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
ASW103
5 ~ 4000 MHz MMIC Amplifier
APPLICATION CIRCUIT
IF
Frequency (MHz)
100
200
350
Magnitude S21 (dB)
25.0
24.2
22.5
Magnitude S11 (dB)
-11
-11
-11
Magnitude S22 (dB)
-15
-18
-16
Output P1dB (dBm)
18
18
18
Output IP3 (dBm)
30.0
31.5
32.5
Noise Figure (dB)
3.6
3.6
3.6
Device Voltage (V)
+4.25
Current (mA)
50
1)
100 ~ 350 MHz
+5 V
1) OIP3 is measured with two tones at an output power of +3 dBm/tone separated by 1 MHz.
Schematic
Board Layout (FR4, 40x40 mm2, 0.8T)
Vs=5 V
R1=15 
C4=1 F
C3=100pF
L1=220 nH
C1=1 nF
RF IN
C2=1 nF
ASW103
S-parameters & K-factor
0
30
-5
20
-10
S11 (dB)
Gain (dB)
25
15
-15
10
-20
5
0
-25
0
50
100
150
200
250
300
350
400
0
50
100
0
Stability Factor
S22 (dB)
250
300
350
400
4
-10
-15
-20
3
2
1
0
50
100
150
200
250
300
350
400
0
0
500
Frequency (MHz)
5/8
200
5
-5
-25
150
Frequency (MHz)
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
ASW103
5 ~ 4000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Wide Band
Frequency (MHz)
500
900
1750
2000
2400
Magnitude S21 (dB)
21
17
12
11
9
Magnitude S11 (dB)
-8.5
-9.0
-9.0
-9.0
-7.5
Magnitude S22 (dB)
-18.0
-15.0
-15.0
-15.0
-13.5
Output P1dB (dBm)
17
17
18
18
19
500 ~ 2500 MHz
Output IP3 (dBm)
30
30
31
31
31
+3.3 V
Noise Figure (dB)
4.0
3.7
3.7
3.9
4.2
Device Voltage (V)
+3.3
Current (mA)
44
1)
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=3.3 V
D1=5.6V
Zener Diode
C4=1 F
C3=100 pF
L1=56 nH
R1=2.7 k
C1=100 pF
RF IN
C2=100 pF
RF OUT
ASW103
S-parameters & K-factor
30
0
25
o
-40 c
o
25 c
o
85 c
-5
S11 (dB)
Gain (dB)
20
15
-10
o
-40 c
o
25 c
o
85 c
10
-15
5
0
0
500
1000
1500
2000
2500
3000
-20
3500
0
500
1000
Frequency (MHz)
-5
Stability Factor
S22 (dB)
2500
3000
3500
2500
3000
3500
4
-10
-15
-20
o
-40 c
o
25 c
o
85 c
-25
3
2
1
0
0
500
1000
1500
2000
2500
3000
3500
0
500
1000
1500
2000
Frequency (MHz)
Frequency (MHz)
6/8
2000
5
0
-30
1500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
ASW103
5 ~ 4000 MHz MMIC Amplifier
Gain vs. Temperature
Current vs. Temperature
70
16
60
14
12
Gain (dB)
Current (mA)
50
40
10
30
Frequency = 2000 MHz
8
20
10
-60
-40
-20
0
20
40
60
80
6
-60
100
-40
-20
o
20
40
60
80
100
Temperature ( C)
P1dB vs. Temperature
Output IP3 vs. Temperature
24
45
22
40
20
35
Output IP3 (dBm)
P1dB (dBm)
0
o
Temperature ( C)
18
16
Frequency = 2000 MHz
30
25
Frequency = 2000 MHz
14
20
12
-60
-40
-20
0
20
40
60
80
100
15
-60
-40
o
Temperature ( C)
-20
0
20
40
60
80
100
o
Temperature ( C)
Output IP3 vs. Tone Power (Frequency = 2000 MHz)
45
40
Output IP3 (dBm)
35
30
25
o
-40 c
o
25 c
o
85 c
20
15
10
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10 11
Pout per Tone (dBm)
7/8
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
ASW103
5 ~ 4000 MHz MMIC Amplifier
Recommended Soldering Reflow Profile
260 C
Ramp-up
(3 C/sec)
20~40 sec
Ramp-down
(6 C/sec)
200 C
150 C
60~180 sec
Copyright 2006-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in
any form or by any means without the prior written consent of ASB.
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ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
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