FQB33N10 / FQI33N10 N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 33 A, 100 V, RDS(on) = 52 mΩ (Max) @VGS = 10 V, ID = 16.5 A • Low Gate Charge (Typ. 38 nC) • Low Crss (Typ. 62 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D D ! " G S D2-PAK G D S FQB Series Absolute Maximum Ratings Symbol VDSS I2-PAK ! FQI Series Parameter ID IDM Drain Current S VGSS Gate-Source Voltage EAS IAR EAR FQB33N10 / FQI33N10 - Continuous (TC = 100°C) dv/dt TJ, TSTG TL " " TC = 25°C unless otherwise noted Drain-Source Voltage - Continuous (TC = 25°C) Drain Current PD ! " G! Unit 100 V 33 A 23 A 132 A ±25 V Single Pulsed Avalanche Energy (Note 2) 435 mJ Avalanche Current (Note 1) 33 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 12.7 6.0 3.75 mJ V/ns W 127 0.85 -55 to +175 W W/°C °C 300 °C - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol RθJC Typ Max Thermal Resistance, Junction-to-Case Parameter -- 1.18 °CW RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °CW RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °CW Unit * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor Corporation FQB33N10 / FQI33N10 Rev. C0 www.fairchildsemi.com FQB33N10 / FQI33N10 N-Channel MOSFET March 2013 Symbol C = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 100 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.11 -- V/°C 1 µA IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- VDS = 80 V, TC = 150°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.040 0.052 Ω -- 22 -- S -- 1150 1500 pF -- 320 420 pF -- 62 80 pF -- 15 40 ns -- 195 400 ns -- 80 170 ns -- 110 230 ns On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 16.5 A gFS Forward Transconductance VDS = 40 V, ID = 16.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 50 V, ID = 33 A, RG = 25 Ω (Note 4, 5) VDS = 80 V, ID = 33 A, VGS = 10 V (Note 4, 5) -- 38 51 nC -- 7.5 -- nC -- 18 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A ISM -- -- 132 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 33 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 80 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 33 A, dIF / dt = 100 A/µs -- 0.22 -- µC (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.6mH, IAS = 33A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD 33A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor Corporation FQB33N10 / FQI33N10 Rev. C0 www.fairchildsemi.com FQB33N10 / FQI33N10 N-Channel MOSFET Electrical CharacteristicsT VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 2 2 10 Top : ID, Drain Current [A] ID, Drain Current [A] 10 1 10 1 10 175 25 Notes : 1. 250s Pulse Test 2. TC = 25 0 10 Notes : 1. VDS = 40V 2. 250s Pulse Test -55 0 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.20 2 10 IDR, Reverse Drain Current [A] R DS(ON) [ ], Drain-Source On-Resistance 0.15 VGS = 10V 0.10 VGS = 20V 0.05 Note : TJ = 25 0.00 0 20 40 60 1 10 80 100 120 175 0 10 ID, Drain Current [A] 0.2 0.8 Notes : 1. VGS = 0 V 2. f = 1 MHz 1500 Crss 500 V GS , Gate-Source Voltage [V] Capacitance [pF] Ciss Coss 1000 0 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor Corporation FQB33N10 / FQI33N10 Rev. C0 1.2 1.4 VDS = 50V VDS = 80V 8 6 4 2 Note : ID = 33A 0 10 1.0 12 10 2000 0 -1 10 0.6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 0.4 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3000 Notes : 1. VGS = 0V 2. 250s Pulse Test 25 0 5 10 15 20 25 30 35 40 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQB33N10 / FQI33N10 N-Channel MOSFET Typical Characteristics (Continued) 1.2 3.0 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 16.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 35 Operation in This Area is Limited by R DS(on) 2 25 100 µ s ID , Drain Current [A] ID , Drain Current [A] 10 30 1 ms 10 ms 10 1 DC Notes : o 1. TC = 25 C 10 10 0 10 15 10 5 o 2. TJ = 175 C 3. Single Pulse 0 20 1 0 25 2 10 50 100 125 150 175 Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 N otes : 1 . Z J C ( t ) = 1 . 1 8 /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t ) 0 .2 10 0 .1 -1 0 .0 5 PDM 0 .0 2 JC (t), T h e rm a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [] VDS, Drain-Source Voltage [V] t1 0 .0 1 Z s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation FQB33N10 / FQI33N10 Rev. C0 www.fairchildsemi.com FQB33N10 / FQI33N10 N-Channel MOSFET Typical Characteristics FQB33N10 / FQI33N10 N-Channel MOSFET Gate Charge Test Circuit & Waveform 50K 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on t off tf Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG VDD DUT 10V tp ©2000 Fairchild Semiconductor Corporation FQB33N10 / FQI33N10 Rev. C0 ID (t) VDS (t) VDD tp Time www.fairchildsemi.com FQB33N10 / FQI33N10 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2000 Fairchild Semiconductor Corporation FQB33N10 / FQI33N10 Rev. C0 www.fairchildsemi.com FQB33N10 / FQI33N10 N-Channel MOSFET Package Dimensions D2 - PAK Dimensions in Millimeters ©2000 Fairchild Semiconductor Corporation FQB33N10 / FQI33N10 Rev. C0 www.fairchildsemi.com FQB33N10 / FQI33N10 N-Channel MOSFET Package Dimensions (Continued) I2 - PAK Dimensions in Millimeters ©2000 Fairchild Semiconductor Corporation FQB33N10 / FQI33N10 Rev. C0 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2000 Fairchild Semiconductor Corporation FQB33N10 / FQI33N10 Rev. C0 www.fairchildsemi.com FQB33N10 / FQI33N10 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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