Z ibo Seno Electronic Engineering Co., Ltd. FR251G – FR257G 2.5A GLASS PASSIVATED FAST RECOVERY DIODE Features ! ! ! ! ! Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-15, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.40 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version D DO-15 Min Max Dim 24.5 — A 7.62 5.50 B 0.60 0.80 C 2.60 3.60 D All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 75°C FR251G FR252G FR253G FR254G FR255G FR256G FR257G Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 2.5 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 60 A Forward Voltage @IF = 2.5A VFM 1.3 V @TA = 25°C @TA = 100°C IRM 5.0 100 µA Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 2) trr Typical Junction Capacitance (Note 3) Cj 30 pF Operating Temperature Range Tj -65 to +150 °C TSTG -65 to +150 °C Storage Temperature Range 150 250 500 nS Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. FR251G – FR257G 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 4 3 2 1 1.0 0.1 Tj = 25°C Pulse width = 300µs 0.01 0 0 25 50 A, 75 100 125 150 0.6 175 AMBIENT TEMPERATURE (°C) Fig. 1 Forward Derating Curve 1.0 0.8 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 60 100 Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 10 Single phase half wave Resistive or Inductive load IF, INSTANTANEOUS FWD CURRENT (A) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) FR251G – FR257G 40 20 TA = 25°C f = 1.0MHz 10 1 0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 1 100 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit FR251G – FR257G 2 of 2 www.senocn.com Alldatasheet