ALSC AS4CM4E1Q-50 4m x 4 cmos quad cas dram (edo) family Datasheet

March 2001
AS4C4M4EOQ
AS4C4M4E1Q
®
4M ✕ 4 CMOS QuadCAS DRAM (EDO) family
Features
• Organization: 4,194,304 words × 4 bits
• High speed
- 50/60 ns RAS access time
- 25/30 ns column address access time
- 12/15 ns CAS access time
• Low power consumption
- Active: 495 mW max
- Standby: 5.5 mW max, CMOS I/O
• Extended data out
• Refresh
- 4096 refresh cycles, 64 ms refresh interval for
4C4M4EOQ
- 2048 refresh cycles, 32 ms refresh interval for
AS4C4M4E1Q
- RAS-only and hidden refresh or CAS-before-RAS refresh
or self-refresh
• TTL-compatible
• 4 separate CAS pins allow for separate I/O operation
• JEDEC standard package
- 300 mil, 28-pin SOJ
- 300 mil, 28-pin TSOP
• 5V power supply
• Latch-up current ≥ 200 mA
• ESD protection ≥ 2000 mV
Pin arrangement
Pin designation
1
2
3
4
5
6
7
8
9
10
11
12
13
14
TSOP
28
27
26
25
24
23
22
21
20
19
18
17
16
15
GND
I/O3
I/O2
CAS3
OE
A9
CAS2
NC
A8
A7
A6
A5
A4
GND
VCC
I/O0
I/O1
WE
RAS
*NC/A11
CAS0
CAS1
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
AS4C4M4E0
VCC
I/O0
I/O1
WE
RAS
*NC/A11
CAS0
CAS1
A10
A0
A1
A2
A3
VCC
AS4C4M4E0
SOJ
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
GND
I/O3
I/O2
CAS3
OE
A9
CAS2
NC
A8
A7
A6
A5
A4
GND
* NC on 2K refresh version; A11 on 4K refresh version
Pin(s)
Description
A0 to A11
Address inputs
RAS
Row address strobe
CAS
Column address strobe
WE
Write enable
I/O0 to I/O3
Input/output
OE
Output enable
VCC
Power
GND
Ground
NC
No Connection
Selection guide
Symbol
4C4M4EOQ/E1Q-50
4C4M4EOQ/E1-60
Unit
Maximum RAS access time
tRAC
50
60
ns
Maximum column address access time
tCAA
25
30
ns
Maximum CAS access time
tCAC
12
15
ns
Maximum output enable (OE) access time
tOEA
13
15
ns
Minimum read or write cycle time
tRC
85
100
ns
Minimum hyper page mode cycle time
tPC
20
24
ns
Maximum operating current
ICC1
110
100
mA
Maximum CMOS standby current
ICC5
1.0
1.0
mA
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AS4C4M4EOQ
AS4C4M4E1Q
®
Functional description
The 4C4M4EOQ, and AS4C4M4E1Q are high performance 16-megabit CMOS Quad CAS Dynamic Random Access Memories (DRAM)
organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques
resulting in high speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family
is optimized for use as main memory in PC, workstation, router and switch applications.
These products feature a high speed page mode operation where read and write operations within a single row (or page) can be executed at
very high speed by toggling column addresses within that row. Row and column addresses are alternately latched into input buffers using the
falling edge of RAS and CAS inputs respectively. Also, RAS is used to make the column address latch transparent, enabling application of
column addresses prior to CAS assertion.
Extended data out (EDO) read mode enables 50 MHz operation using 50 ns devices. Four individual CAS pins allow for separate I/O
operation which enables the device to operate in parity mode. In contrast to 'fast page mode' devices, data remains active on outputs after
CAS is de-asserted high, giving system logic more time to latch the data. Use OE and WE to control output impedance and prevent bus
contention during read-modify-write and shared bus applications. Outputs also go to high impedance at the last occurrance of RAS and CAS
going high.
Refresh on the 4096 address combinations of A0 to A11 must be performed every 64 ms using:
• RAS-only refresh: RAS is asserted while CAS is held high. Each of the 4096 rows must be strobed. Outputs remain high impedence.
• Hidden refresh: CAS is held low while RAS is toggled. Refresh address is generated internally. Outputs remain low impedence with
previous valid data.
• CAS-before-RAS refresh (CBR): At least one CAS is asserted prior to RAS. Refresh address is generated internally.
Outputs are high-impedence (OE and WE are don't care).
• Normal read or write cycles refresh the row being accessed.
• Self-refresh cycles
Refresh on the 2048 address combinations of A0 to A10 must be performed every 32 ms using:
• RAS-only refresh: RAS is asserted while CAS is held high. Each of the 2048 rows must be strobed. Outputs remain high impedence.
• Hidden refresh: CAS is held low while RAS is toggled. Refresh address is generated internally. Outputs remain low impedence with
previous valid data.
• CAS-before-RAS refresh (CBR): At least one CAS is asserted prior to RAS. Refresh address is generated internally.
Outputs are high-impedence (OE and WE are don't care).
• Normal read or write cycles refresh the row being accessed.
• Self-refresh cycles
The 4C4M4EOQ and AS4C4M4E1Q are available in the standard 28-pin plastic SOJ and 28-pin plastic TSOP packages. The 4C4M4EOQ and
AS4C4M4E1Q operate with a single power supply of 5V ± 0.5V. All provide TTL compatible inputs and outputs.
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AS4C4M4EOQ
AS4C4M4E1Q
®
Refresh
controller
Logic block diagram for 4K refresh
RAS
CAS
WE
RAS clock
generator
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
CAS clock
generator
WE clock
generator
Sense amp
I/O0 to I/O3
OE
Row decoder
GND
Data
I/O
buffers
Column decoder
Address buffers
VCC
4,194,304 × 4
Array
(16,777,216)
Refresh
controller
Logic block diagram for 2K refresh
RAS
CAS
WE
RAS clock
generator
CAS clock
generator
WE clock
generator
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
Sense amp
I/O0 to I/O3
OE
Row decoder
GND
Data
I/O
buffers
Column decoder
Address buffers
VCC
4,194,304 × 4
Array
(16,777,216)
Substrate bias
generator
Recommended operating conditions
Parameter
Supply voltage
Input voltage
4C4M4EOQ
AS4C4M4E1Q
4C4M4EOQ
AS4C4M4E1Q
Symbol
Min
Nominal
Max
Unit
VCC
4.5
5.0
5.5
V
GND
0.0
0.0
0.0
V
VIH
2.4
–
VCC
V
VIL
–0.5†
–
0.8
V
Ambient operating temperature
†
TA
0
70
VIL min -3.0V for pulse widths less than 5 ns. Recommended operating conditions apply throughout this document unlesss otherwise specified.
3/22/01; v.1.0
Alliance Semiconductor
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AS4C4M4EOQ
AS4C4M4E1Q
®
Absolute maximum ratings
Parameter
Symbol
Min
Max
Unit
Input voltage
Vin
-1.0
+7.0
V
Input voltage (DQs)
VDQ
-1.0
VCC + 0.5
V
Power supply voltage
VCC
-1.0
+7.0
V
Storage temperature (plastic)
TSTG
-55
+150
°C
Soldering temperature × time
TSOLDER
–
260 × 10
o
Power dissipation
PD
–
1
W
Short circuit output current
Iout
–
50
mA
C × sec
DC electrical characteristics (AS4C4M4E0/E1)
-50
Parameter
Symbol Test conditions
-60
Min
Max
Min
Max
Unit
Notes
Input leakage current IIL
0V ≤ Vin ≤ +5.5V,
Pins not under test = 0V
-5
+5
-5
+5
µA
Output leakage current IOL
DOUT disabled, 0V ≤ Vout ≤ +5.5V
-5
+5
-5
+5
µA
Operating power
supply current
ICC1
RAS, UCAS, LCAS, Address cycling;
tRC=min
–
110
–
100
mA
TTL standby power
supply current
ICC2
RAS = UCAS = LCAS ≥ VIH
–
2.0
–
2.0
mA
Average power supply
current, RAS refresh ICC3
mode or CBR
RAS cycling, UCAS = LCAS ≥ VIH,
tRC = min of RAS low after XCAS
low.
–
110
–
100
mA
1
EDO page mode
average power supply ICC4
current
RAS = VIL, UCAS or LCAS,
address cycling: tHPC = min
–
90
–
80
mA
1, 2
CMOS standby power
ICC5
supply current
RAS = UCAS = LCAS = VCC - 0.2V
–
1.0
–
1.0
mA
VOH
IOUT = -5.0 mA
2.4
–
2.4
–
V
VOL
IOUT = 4.2 mA
–
0.4
–
0.4
V
CAS before RAS refresh
ICC6
current
RAS, UCAS or LCAS cycling, tRC =
min
–
110
–
100
mA
Self refresh current
RAS = UCAS = LCAS ≤ 0.2V,
WE = OE ≥ VCC - 0.2V,
all other inputs at 0.2V or
VCC - 0.2V
–
0.6
–
0.6
mA
Output voltage
3/22/01; v.1.0
ICC7
Alliance Semiconductor
1,2
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®
DC electrical characteristics (AS4LC4M4E0/E1)
-50
Parameter
Symbol Test conditions
Input leakage current
IIL
-60
Min
Max
Min
Max
Unit
0V ≤ Vin ≤ VCC (max)
Pins not under test = 0V
-5
+5
-5
+5
µA
Output leakage current IOL
DOUT disabled, 0V ≤ Vout ≤ VCC
(max)
-5
+5
-5
+5
µA
Operating power
supply current
ICC1
RAS, UCAS, LCAS, Address cycling;
tRC=min
–
85
–
75
mA
TTL standby power
supply current
ICC2
RAS = UCAS = LCAS ≥ VIH,
all other inputs at VIH or VIL
–
2.0
–
2.0
mA
Average power supply
current, RAS refresh
mode or CBR
ICC3
RAS cycling, UCAS = LCAS ≥ VIH,
tRC = min of RAS low after XCAS low.
–
80
–
70
mA
4
EDO page mode
average power supply
current
ICC4
RAS = VIL, UCAS or LCAS,
address cycling: tHPC = min
–
85
–
75
mA
4, 5
CMOS standby power
supply current
ICC5
RAS = UCAS = LCAS = VCC - 0.2V,
F=0
–
200
–
200
µA
VOH
IOUT = -2.0 mA
2.4
–
2.4
–
V
VOL
IOUT = 2 mA
–
0.4
–
0.4
V
CAS before RAS refresh
ICC6
current
RAS, UCAS or LCAS cycling, tRC =
min
–
80
–
70
mA
Self refresh current
RAS = UCAS = LCAS ≤ 0.2V,
WE = OE = VCC - 0.2V,
all other inputs at 0.2V or VCC 0.2V
–
0.3
–
0.3
mA
Output voltage
3/22/01; v.1.0
ICC7
Alliance Semiconductor
Notes
4,5
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AS4C4M4E1Q
®
AC parameters common to all waveforms
-50
-60
Symbol Parameter
Min
Max
Min
Max
Unit
Notes
tRC
Random read or write cycle time
80
–
100
–
ns
tRP
RAS precharge time
30
–
40
–
ns
tRAS
RAS pulse width
50
10K
60
10K
ns
tCAS
CAS pulse width
8
10K
10
10K
ns
tRCD
RAS to CAS delay time
15
35
15
43
ns
6
tRAD
RAS to column address delay time
12
25
12
30
ns
7
tRSH
CAS to RAS hold time
10
–
10
–
ns
tCSH
RAS to CAS hold time
40
–
50
–
ns
tCRP
CAS to RAS precharge time
5
–
5
–
ns
tASR
Row address setup time
0
–
0
–
ns
tRAH
Row address hold time
8
–
10
–
ns
tT
Transition time (rise and fall)
1
50
1
50
ns
4,5
tREF
Refresh period
–
32/64
–
32/64
ms
17/16
tCP
CAS precharge time
8
–
10
–
ns
tRAL
Column address to RAS lead time
25
–
30
–
ns
tASC
Column address setup time
0
–
0
–
ns
tCAH
Column address hold time
8
10
–
ns
Read cycle
-50
Symbol Parameter
-60
Min
Max
Min
Max
Unit
Notes
tRAC
Access time from RAS
–
50
–
60
ns
6
tCAC
Access time from CAS
–
12
–
15
ns
6,13
tAA
Access time from address
–
25
–
30
ns
7,13
tRCS
Read command setup time
0
–
0
–
ns
tRCH
Read command hold time to CAS
0
–
0
–
ns
9
tRRH
Read command hold time to RAS
0
–
0
–
ns
9
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AS4C4M4EOQ
AS4C4M4E1Q
®
Write cycle
-50
Symbol Parameter
-60
Min
Max
Min
Max
Unit
Notes
tWCS
Write command setup time
0
–
0
–
ns
11
tWCH
Write command hold time
10
–
10
–
ns
11
tWP
Write command pulse width
10
–
10
–
ns
tRWL
Write command to RAS lead time
10
–
10
–
ns
tCWL
Write command to CAS lead time
8
–
10
–
ns
tDS
Data-in setup time
0
–
0
–
ns
12
tDH
Data-in hold time
8
–
10
–
ns
12
Read-modify-write cycle
-50
Symbol Parameter
-60
Min
Max
Min
Max
Unit
Notes
tRWC
Read-write cycle time
113
–
135
–
ns
tRWD
RAS to WE delay time
67
–
77
–
ns
11
tCWD
CAS to WE delay time
32
–
35
–
ns
11
tAWD
Column address to WE delay time
42
–
47
–
ns
11
Refresh cycle
-50
Symbol Parameter
-60
Min
Max
Min
Max
Unit
Notes
tCSR
CAS setup time (CAS-before-RAS)
5
–
5
–
ns
3
tCHR
CAS hold time (CAS-before-RAS)
8
–
10
–
ns
3
tRPC
RAS precharge to CAS hold time
0
–
0
–
ns
tCPT
CAS precharge time
(CBR counter test)
10
10
–
ns
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P. 7 of 16
AS4C4M4EOQ
AS4C4M4E1Q
®
Hyper page mode cycle
-50
-60
Symbol
Parameter
Min
Max
Min
Max
Unit
tCPWD
CAS precharge to WE delay time
45
–
52
–
ns
tCPA
Access time from CAS precharge
–
28
–
35
ns
tRASP
RAS pulse width
50
100K
60
100K
ns
tDOH
Previous data hold time from CAS
5
–
5
–
ns
tREZ
Output buffer turn off delay from RAS
0
13
0
15
ns
tWEZ
Output buffer turn off delay from WE
0
13
0
15
ns
tOEZ
Output buffer turn off delay from OE
0
13
0
15
ns
tHPC
Hyper page mode cycle time
20
–
25
–
ns
tHPRWC
Hyper page mode RMW cycle
47
–
56
–
ns
tRHCP
RAS hold time from CAS
30
–
35
–
ns
Notes
13
Output enable
-50
Symbol
Parameter
tCLZ
-60
Min
Max
Min
Max
Unit
Notes
CAS to output in Low Z
0
–
0
–
ns
tROH
RAS hold time referenced to OE
8
–
10
–
ns
tOEA
OE access time
–
13
–
15
ns
tOED
OE to data delay
13
–
15
–
ns
tOEZ
Output buffer turnoff delay from OE
0
13
0
15
ns
tOEH
OE command hold time
10
–
10
–
ns
tOLZ
OE to output in Low Z
0
–
0
–
ns
tOFF
Output buffer turn-off time
0
13
0
15
ns
8,10
Notes
8
8
Self-refresh cycle
-50
-60
Std
Symbol
Parameter
Min
Max
Min
Max
Unit
tRASS
RAS pulse width
(CBR self refresh)
100
–
100
–
µs
tRPS
RAS precharge time
(CBR self refresh)
90
–
105
–
ns
tCHS
CAS hold time
(CBR self refresh)
-50
–
-50
–
ns
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AS4C4M4EOQ
AS4C4M4E1Q
®
Notes
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
ICC1, ICC3, ICC4, and ICC6 are dependent on frequency.
ICC1 and ICC4 depend on output loading. Specified values are obtained with the output open.
An initial pause of 200 µs is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. In the case of an internal
refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 8 initialization cycles are required after
extended periods of bias without clocks (greater than 8 ms).
AC Characteristics assume tT = 2 ns. All AC parameters are measured with a load equivalent to two TTL loads and 100 pF, VIL (min) ≥ GND and VIH
(max) ≤ VCC.
VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between VIH and VIL.
Operation within the tRCD (max) limit insures that tRAC (max) can be met. tRCD (max) is specified as a reference point only. If tRCD is greater than the
specified tRCD (max) limit, then access time is controlled exclusively by tCAC.
Operation within the tRAD (max) limit insures that tRAC (max) can be met. tRAD (max) is specified as a reference point only. If tRAD is greater than the
specified tRAD (max) limit, then access time is controlled exclusively by tAA.
Assumes three state test load (5 pF and a 380 Ω Thevenin equivalent).
Either tRCH or tRRH must be satisfied for a read cycle.
tOFF (max) defines the time at which the output achieves the open circuit condition; it is not referenced to output voltage levels. tOFF is referenced from
rising edge of RAS or CAS, whichever occurs last.
tWCS, tWCH, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the datasheet as electrical characteristics only.
If tWS ≥ tWS (min) and tWH ≥ tWH (min), the cycle is an early write cycle and data out pins will remain open circuit, high impedance, throughout the
cycle. If tRWD ≥ tRWD (min), tCWD ≥ tCWD (min) and tAWD ≥ tAWD (min), the cycle is a read-write cycle and the data out will contain data read from the
selected cell. If neither of the above conditions is satisfied, the condition of the data out at access time is indeterminate.
These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in read-write cycles.
Access time is determined by the longest of tCAA or tCAC or tCPA
tASC ≥ tCP to achieve tPC (min) and tCPA (max) values.
These parameters are sampled and not 100% tested.
These characteristics apply to AS4C4M4EOQ 5V devices.
These characteristics apply to AS4C4M4E1Q 5V devices.
AC test conditions
- Access times are measured with output reference levels of VOH =
2.4V and VOL = 0.4V,
VIH = 2.4V and VIL = 0.8V
- Input rise and fall times: 2 ns
+5V
+3.3V
R1 = 828Ω
Dout
100 pF*
R2 = 295Ω
R1 = 828Ω
*including scope
and jig capacitance
GND
Figure A: Equivalent output load
(AS4C4M4E0/AS4C4M4E1)
Dout
50 pF*
R2 = 295Ω
*including scope
and jig capacitance
GND
Figure B: Equivalent output load
(AS4C4M4E0/AS4C4M4E1)
Key to switching waveforms
Rising input
3/22/01; v.1.0
Falling input
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Undefined output/don’t care
P. 9 of 16
AS4C4M4EOQ
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®
Read waveform
tRC
tRAS
tRCD
tRSH
tRP
RAS
tCSH
tCRP
tCAH
tCAS
tASC
tRCS
CAS
tRAD
Address
tRAL
tRAH
tASR
Row address
Column address
tRRH
tRCH
WE
tROH
tROH
tWEZ
OE
tOEZ
tRAC
tAA
tOFF (see note 11)
tOEA
tCAC
tREZ
tCLZ
DQ
Data out
tOLZ
Early write waveform
tRC
tRAS
tRP
RAS
tCSH
tRSH
tCRP
tRCD
tCAS
CAS
tRAD
tRAL
tASC
tASR
Address
tRAH
tCAH
Row address
Column address
tCWL
tRWL
tWP
tWCS
tWCH
WE
OE
tDS
DQ
3/22/01; v.1.0
tDH
Data in
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®
Write waveform
OE controlled
tRC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS
tRCD
CAS
tRAL
tRAD
tRAH
tASR
tASC
tCAH
Row address
Address
Column address
tRWL
tCWL
tWP
WE
tOEH
OE
tDS
tOED
tDH
Data in
DQ
Read-modify-write waveform
tRWC
tRAS
tRP
RAS
tCAS
tCRP
tRCD
tRSH
tCSH
CAS
tAR
tRAL
tRAD
tRAH
tASR
Address
tASC
tCAH
Row address
Column address
tRWD
tRWL
tAWD
tRCS
WE
tCWL
tCWD
tOEA
tOEZ
tWP
tOED
OE
tRAC
tAA
tCAC
tCLZ
Data out
DQ
tDS
tDH
Data in
tOLZ
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®
EDO page mode read waveform
tRASP
tRP
RAS
tRHCP
tCSH
tCRP
tRCD
tCAS
tCP
tRSH
tHPC
CAS
tAR
tRAL
tRAD
tASR
Address
tRAH
tASC
Row
tCAH
Col address
Col address
Col address
tRCS
tRCH
tRRH
WE
tOEA
tOEA
OE
tRAC
tCPA
tCLZ
tCAC
tAA
DQ
tOEZ
tOEZ
tOFF
tCPA
Data out
Data out
tOLZ
Data out
tCLZ
tCLZ
EDO page mode early write waveform
tRASP
tRAH
tRWL
RAS
tCRP
tRCD
tPC
tCSH
tCAS
CAS
tCP
tWCS
tRSH
tRAL
tAR
tASR
Address
tCAH
tASC
tRAD
Col address
Row address
Col address
Col address
tCWL
tWP
tWCH
tOEH
WE
OE
tHDR
tOED
tDH
tDS
DQ
3/22/01; v.1.0
Data in
Data In
Alliance Semiconductor
Data in
P. 12 of 16
AS4C4M4EOQ
AS4C4M4E1Q
®
EDO page mode read-modify-write waveform
tRASP
tRP
RAS
tHPRWC
tCSH
tRCD
tCAS
tCP
tCRP
CAS
tRAD
tASR
tRAH
tASC
Address
tASC
tCAH
Row ad
Col ad
Col ad
tRWD
tRCS
tRAL
tASC
tCAH
tCAH
Col address
tCPWD
tCWL
tCWD
tCWD
tRWL
tCWD
tAWD
tCWL
tAWD
tWP
WE
tOEA
tOEZ
tOED
tOEA
OE
tAA
tDH
tRAC
tCPA
tDS
tDS
tCLZ
tCLZ
tCAC
tCLZ
tCAC
DQ
Data in
tCAC
Data in
Data out
Data out
Data in
Data out
CAS before RAS refresh waveform
WE = A = VIH or VIL
tRC
tRP
tRAS
RAS
tRPC
tCHR
tCP
tCSR
CAS
OPEN
DQ
RAS only refresh waveform
WE = OE = VIH or VIL
tRC
tRAS
tRP
RAS
tCRP
tRPC
CAS
tASR
Address
3/22/01; v.1.0
tRAH
Row address
Alliance Semiconductor
P. 13 of 16
AS4C4M4EOQ
AS4C4M4E1Q
®
Hidden refresh waveform (read)
tRC
tRC
tRAS
tRP
tRAS
tRP
RAS
tCRP
tCHR
tRCD
tRSH
tCRP
CAS
tAR
tRAD
tCAH
tRAH
tASC
tASR
Row
Address
Col address
tRCS
tRRH
WE
tOEA
OE
tRAC
tOFF
tAA
tCAC
tCLZ
tOEZ
Data out
DQ
Hidden refresh waveform (write)
tRC
tRAS
tRP
RAS
tCRP
tRCD
tRSH
tCHR
CAS
tAR
tRAD
tRAL
tRAH
tASR
Address
tASC
tCAH
Row address
Col address
tRWL
tWCR
tWP
tWCS
tWCH
WE
tDS
tDH
tDHR
DQ
Data in
OE
3/22/01; v.1.0
Alliance Semiconductor
P. 14 of 16
AS4C4M4EOQ
AS4C4M4E1Q
®
CAS before RAS refresh counter test waveform
tRAS
tRSH
tRP
RAS
CAS
tCSR
tCHR
tCPT
tCAS
tRAL
tASC
tCAH
Address
Col address
tAA
tCAC
tCLZ
Read cycle
DQ
tOFF
tOEZ
Data out
tRRH
tRCH
tRCS
WE
tROH
tOEA
OE
tRWL
tCWL
tWP
tWCH
Write cycle
tWCS
WE
tDH
tDS
DQ
Data in
OE
tRWL
tWP
tRCS
tCWD
tAWD
tCWL
Read-Write cycle
WE
tOEA
t AA
tCLZ
DQ
tDH
tOEZ
tCAC
3/22/01; v.1.0
tOED
OE
tDS
Data out
Alliance Semiconductor
Data in
P. 15 of 16
AS4C4M4EOQ
AS4C4M4E1Q
®
CAS-before-RAS self refresh cycle
tRP
tRASS
tRPS
RAS
tRPC
tRPC
tCP
tCHS
tCSR
UCAS,
LCAS
tCEZ
DQ
Capacitance 15
ƒ = 1 MHz, Ta = Room temperature
Parameter
Input capacitance
DQ capacitance
Symbol
Signals
Test conditions
Max
Unit
CIN1
A0 to A9
Vin = 0V
5
pF
CIN2
RAS, UCAS, LCAS, WE, OE
Vin = 0V
7
pF
CDQ
DQ0 to DQ15
Vin = Vout = 0V
7
pF
4C4M4EOQ ordering information
Package \ RAS access time
50 ns
60 ns
Plastic SOJ, 300 mil, 24/26-pin
5V
4C4M4EOQ-50JC
4C4M4EOQ-60JC
Plastic TSOP, 300 mil, 24/26-pin
5V
4C4M4EOQ-50TC
4C4M4EOQ-60TC
AS4C4M4E1Q ordering information
Package \ RAS access time
50 ns
60 ns
Plastic SOJ, 300 mil, 24/26-pin
5V
AS4C4M4E1Q-50JC
AS4C4M4E1Q-60JC
Plastic TSOP, 300 mil, 24/26-pin
5V
AS4C4M4E1Q-50TC
AS4C4M4E1Q-60TC
4C4M4EOQ family part numbering system
AS4
C
DRAM
prefix
C = 5V CMOS
4M×4
LC = 3.3V CMOS
3/22/01; v.1.0
4M4
E0
–XX
X
E0=4K refresh
E1=2K refresh
RAS access
time
Package:
Commercial temperature
J = SOJ 300 mil, 24/26
range, 0°C to 70 °C
T = TSOP 300 mil, 24/26
Alliance Semiconductor
C
P. 16 of 16
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