AD ADG841YKSZ-REEL 0.28 ohm cmos 1.65 v to 3.6 v single spst switches in sc70 Datasheet

0.28 Ω CMOS 1.65 V to 3.6 V
Single SPST Switches in SC70
ADG841/ADG842
FUNCTIONAL BLOCK DIAGRAM
Ultralow on resistance
0.28 Ω typical
0.48 Ω max at 125°C
Excellent audio performance, ultralow distortion
0.025 Ω typical
0.052 Ω max RON flatness
1.65 V to 3.6 V single supply
High current carrying capability
300 mA continuous current
500 mA peak current
Automotive temperature range: –40°C to +125°C
Rail-to-rail operation
Typical power consumption (<0.01 µW)
APPLICATIONS
Handsets
PDAs
MP3 players
Power routing
Battery-powered systems
Communication systems
Modems
PCMCIA cards
ADG841
S
ADG842
D
IN
S
D
IN
05424-001
FEATURES
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
Figure 1.
PRODUCT HIGHLIGHTS
1.
<0.48 Ω over full temperature range of –40°C to +125°C.
2.
Compatible with 1.8 V CMOS logic.
3.
High current handling capability (300 mA continuous
current at 3.3 V).
4.
Low THD + N (0.02% typ).
5.
Tiny SC70 package.
GENERAL DESCRIPTION
Table 1. ADG841/ADG842 Truth Table
The ADG841 and ADG842 are low voltage CMOS devices
containing a single-pole, single-throw (SPST) switch. The
ADG841 is closed for a Logic 1 input and the ADG842 is open
for a Logic 1 input. The devices offer ultralow on resistance of
less than 0.48 Ω over the full temperature range. The ADG841/
ADG842 are fully specified for 3.3 V, 2.5 V, and 1.8 V supply
operation.
Logic (IN)
0
1
ADG841
Off
On
ADG842
On
Off
Each switch conducts equally well in both directions when on,
and has an input signal range that extends to the supplies. The
ADG841/ADG842 exhibit break-before-make switching action.
The ADG841/ADG842 are available in a 6-lead SC70 package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
© 2005 Analog Devices, Inc. All rights reserved.
ADG841/ADG842
TABLE OF CONTENTS
Specifications—2.7 V to 3.6 V......................................................... 3
Typical Performance Characteristics ..............................................8
Specifications—2.5 V ± 0.2 V.......................................................... 4
Terminology.....................................................................................11
Specifications—1.65 V to 1.95 ........................................................ 5
Test Circuits......................................................................................12
Absolute Maximum Ratings............................................................ 6
Outline Dimensions ........................................................................13
ESD Caution.................................................................................. 6
Ordering Guide ...........................................................................13
Pin Configuration and Function Descriptions............................. 7
REVISION HISTORY
4/05—Revision 0: Initial Version
Rev. 0 | Page 2 of 16
ADG841/ADG842
SPECIFICATIONS—2.7 V TO 3.6 V1
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On Resistance Flatness (RFLAT (ON))
LEAKAGE CURRENTS
Source Off Leakage IS (OFF)
Channel On Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
+25°C
−40°C
to +85°C
−40°C
to +125°C
0 V to VDD
0.28
0.37
0.025
0.034
0.43
0.48
0.044
0.052
±0.2
±0.2
2
0.8
0.005
tOFF
Charge Injection
Off Isolation
Total Harmonic Distortion (THD + N)
Insertion Loss
−3 dB Bandwidth
CS (OFF)
CD (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
3.2
10.5
14
6.5
7.8
200
−54
0.012
−0.02
21
160
160
238
15.5
16.5
8
8.2
0.003
1
1
2
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
Ω max
VDD = 2.7 V
VDD = 2.7 V, VS = 0 V to VDD, IDS = −100 mA
Figure 18
VDD = 2.7 V, VS = 0 V to VDD, IDS = −100 mA
nA typ
nA typ
±0.1
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS2
tON
Unit
4
Temperature range is −40°C to +125°C
Guaranteed by design; not subject to production test.
Rev. 0 | Page 3 of 16
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
pC typ
dB typ
%
dB typ
MHz typ
pF typ
pF typ
pF typ
µA typ
µA max
VDD = 3.6 V
VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; Figure 19
VS = VD = 0.6 V or 3.3 V; Figure 20
VIN = VINL or VINH
RL = 50 Ω, CL = 35 pF
VS = 1.5 V; Figure 21
RL = 50 Ω, CL = 35 pF
VS = 1.5 V; Figure 21
VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 22
RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 23
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 3 V p-p
RL = 50 Ω, CL = 5 pF; Figure 24
RL = 50 Ω, CL = 5 pF; Figure 24
VDD = 3.6 V
Digital inputs = 0 V or 3.6 V
ADG841/ADG842
SPECIFICATIONS—2.5 V ± 0.2 V1
VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On Resistance Flatness (RFLAT (ON))
LEAKAGE CURRENTS
Source Off Leakage IS (OFF)
Channel On Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
+25°C
−40°C
to +85°C
−40°C
to +125°C
0 V to VDD
0.3
0.35
0.025
0.04
0.4
0.45
0.05
0.05
±0.2
±0.2
1.7
0.7
0.005
tOFF
Charge Injection
Off Isolation
Total Harmonic Distortion (THD + N)
Insertion Loss
–3 dB Bandwidth
CS (OFF)
CD (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
3.2
13
16.5
7
8.2
150
−54
0.022
−0.02
21
170
170
238
18
19
8.4
8.6
0.003
1
1
2
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
Ω max
VDD = 2.3 V, VS = 0 V to VDD, IDS = −100 mA
Figure 18
VDD = 2.3 V, VS = 0 V to VDD, IDS = −100 mA
nA typ
nA typ
±0.1
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS2
tON
Unit
4
Temperature range is −40°C to +125°C.
Guaranteed by design; not subject to production test.
Rev. 0 | Page 4 of 16
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
pC typ
dB typ
%
dB typ
MHz typ
pF typ
pF typ
pF typ
µA typ
µA max
VDD = 2.7 V
VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; Figure 19
VS = VD = 0.6 V or 2.4 V; Figure 20
VIN = VINL or VINH
RL = 50 Ω, CL = 35 pF
VS = 1.5 V; Figure 21
RL = 50 Ω, CL = 35 pF
VS = 1.5 V; Figure 21
VS = 1.25 V, RS = 0 Ω, CL = 1 nF; Figure 22
RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 23
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.5 V p-p
RL = 50 Ω, CL = 5 pF; Figure 24
RL = 50 Ω, CL = 5 pF; Figure 24
VDD = 2.7 V
Digital inputs = 0 V or 2.7 V
ADG841/ADG842
SPECIFICATIONS—1.65 V TO 1.951
VDD = 1.65 V to1.95 V, GND = 0 V, unless otherwise noted.
Table 4.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On Resistance Flatness (RFLAT (ON))
LEAKAGE CURRENTS
Source Off Leakage IS (OFF)
Channel On Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
+25°C
−40°C
to +85°C
−40°C
to +125°C
0 V to VDD
0.37
0.4
0.6
0.17
0.84
1.8
0.84
1.8
±0.2
±0.2
0.65 VDD
0.35 VDD
0.005
tOFF
Charge Injection
Off Isolation
Total Harmonic Distortion (THD + N)
Insertion Loss
–3 dB Bandwidth
CS (OFF)
CD (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
4
19
26
8
9.5
100
−54
0.14
−0.02
21
178
178
238
28
30
9.8
10
0.003
1
1
2
V
Ω typ
Ω max
Ω max
Ω typ
nA typ
nA typ
±0.1
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS2
tON
Unit
4
Temperature range −40°C to +125°C.
Guaranteed by design; not subject to production test.
Rev. 0 | Page 5 of 16
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
pC typ
dB typ
%
dB typ
MHz typ
pF typ
pF typ
pF typ
µA typ
µA max
Test Conditions/Comments
VDD = 1.8 V, VS = 0 V to VDD, IDS = −100 mA
Figure 18
VDD = 1.65 V, VS = 0 V to VDD, IDS = −100 mA
VDD = 1.65 V, VS = 0 V to VDD, IDS = −100 mA
VDD = 1.95 V
VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V; Figure 19
VS = VD = 0.6 V or 1.65 V; Figure 20
VIN = VINL or VINH
RL = 50 Ω, CL = 35 pF
VS = 1.5 V; Figure 21
RL = 50 Ω, CL = 35 pF
VS = 1.5 V; Figure 21
VS = 1 V, RS = 0 V, CL = 1 nF; Figure 22
RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 23
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.2 V p-p
RL = 50 Ω, CL = 5 pF; Figure 24
RL = 50 Ω, CL = 5 pF; Figure 24
VDD = 1.95 V
Digital inputs = 0 V or 1.95 V
ADG841/ADG842
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.
Parameter
VDD to GND
Analog Inputs1
Digital Inputs1
Peak Current, S or D
3.3 V Operation
2.5 V Operation
1.8 V Operation
Continuous Current, S or D
3.3 V Operation
2.5 V Operation
1.8 V Operation
Operating Temperature Range
Automotive (Y Version)
Storage Temperature Range
Junction Temperature
SC70 Package
θJA Thermal Impedance
Reflow Soldering (Pb-free)
Peak Temperature
Time at Peak Temperature
1
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
Rating
−0.3 V to +4.6 V
−0.3 V to VDD + 0.3 V
−0.3 V to 4.6 V or 10 mA,
whichever occurs first
500 mA
460 mA
420 mA (pulsed at 1 ms,
10% duty cycle max)
300 mA
275 mA
250 mA
−40°C to +125°C
−65°C to +150°C
150°C
494.8°C/W
260(+0/−5)°C
10 sec to 40 sec
Overvoltages at S or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 6 of 16
ADG841/ADG842
D 1
S 2
GND 3
ADG841/
ADG842
TOP VIEW
(Not to Scale)
6
VDD
5
NC
4
IN
NC = NO CONNECT
05424-002
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 2. 6-Lead SC70
Table 6. Pin Function Descriptions
Pin No.
1
2
3
4
5
6
Mnemonic
D
S
GND
IN
NC
VDD
Description
Drain Terminal. Can be an input or output.
Source Terminal. Can be an input or output.
Ground (0 V) Reference.
Logic Control Input.
No Connect.
Most Positive Power Supply Potential.
Rev. 0 | Page 7 of 16
ADG841/ADG842
TYPICAL PERFORMANCE CHARACTERISTICS
0.350
0.50
VDD = 3.3V
0.45 IDS = 100mA
TA = 25°C
IDS = 100mA
0.325
0.40
+125°C
0.300
ON RESISTANCE (Ω)
ON RESISTANCE (Ω)
VDD = 3V
VDD = 3.6V
0.275
VDD = 3.3V
0.250
0.35
+85°C
0.30
+25°C
0.25
–40°C
0.20
0.15
0.10
0.225
0.05
0.4
0.8
1.2
1.6
2.0
2.4
SOURCE VOLTAGE (V)
2.8
3.2
3.6
0
Figure 3. On Resistance vs. VD (VS) VDD = 3.3 V ± 0.3 V
0
0.3
0.6
0.9
1.2 1.5 1.8 2.1 2.4
SOURCE VOLTAGE (V)
2.7
3.0
05424-006
0
05424-003
0.200
3.3
Figure 6. On Resistance vs. VD (VS) for Different Temperatures,VDD = 3.3 V
0.50
0.350
VDD = 2.5V
0.45 IDS = 100mA
TA = 25°C
IDS = 100mA
VDD = 2.3V
0.40
ON RESISTANCE (Ω)
ON RESISTANCE (Ω)
0.325
0.300
VDD = 2.5V
VDD = 2.7V
0.275
0.250
+125°C
0.35
+85°C
+25°C
0.30
–40°C
0.25
0.20
0.15
0.10
0.225
0
0
0.5
1.0
1.5
2.0
SOURCE VOLTAGE (V)
0
05424-004
0.200
2.5
0.6
0.50
VDD = 1.65V
ON RESISTANCE (Ω)
0.35
VDD = 1.95V
VDD = 1.8V
0.25
2.5
0.5
+85°C
+125°C
0.30
2.0
VDD = 1.8V
IDS = 100mA
0.40
0.20
0.15
0.4
–40°C
0.3
+25°C
0.2
0.1
0.10
0
0
0
0.4
0.8
1.2
SOURCE VOLTAGE (V)
1.6
Figure 5. On Resistance vs. VD (VS) VDD = 1.8 V ± 0.15 V
2.0
0
0.2
0.4
0.6
0.8
1.0
1.2
SOURCE VOLTAGE (V)
1.4
1.6
1.8
05424-008
0.05
05424-005
ON RESISTANCE (Ω)
1.0
1.5
SOURCE VOLTAGE (V)
Figure 7. On Resistance vs. VD (VS) for Different Temperatures, VDD = 2.5 V
Figure 4. On Resistance vs. VD (VS) VDD = 2.5 V ± 0.2 V
TA = 25°C
0.45 IDS = 100mA
0.5
05424-007
0.05
Figure 8. On Resistance vs. VD (VS) for Different Temperatures, VDD = 1.8 V
Rev. 0 | Page 8 of 16
ADG841/ADG842
450
200
TA = 25°C
VDD = 3.3V
400
150
350
50
ID (OFF)
0
300
250
150
0
20
40
60
TEMPERATURE (°C)
80
100
50
120
0
0
0.5
1.0
1.5
VS (V)
2.0
2.5
05424-012
–20
VDD = 1.8V
100
IS (OFF)
–100
–40
VDD = 2.5V
200
05424-009
LEAKAGE (nA)
100
–50
VDD = 3.3V
CHARGE INJECTION (pC)
ID, IS (ON)
3.0
Figure 12. Charge Injection vs. Source Voltage
Figure 9. Leakage Current vs. Temperature, VDD = 3.3 V
25
140
VDD = 2.5V
120
20
100
VDD = 1.8V
TON
ID, IS (ON)
15
60
TIME (ns)
40
20
VDD = 2.5V
VDD = 3.3V
10
0
VDD = 1.8V
TOFF
ID (OFF)
VDD = 3.3V
5
–20
IS (OFF)
VDD = 2.5V
–40
–20
0
20
40
60
TEMPERATURE (°C)
80
100
120
0
–40
05424-010
–60
–40
–20
0
20
40
60
TEMPERATURE (°C)
80
100
120
05424-013
LEAKAGE (nA)
80
Figure 13. tON/tOFF Times vs. Temperature
Figure 10. Leakage Current vs. Temperature, VDD = 2.5 V
0
60
VDD = 1.8V
–1
TA = 25°C
VDD = 3.3V/2.5V/1.8V
50
–2
ID, IS (ON)
ON RESPONSE (dB)
–3
30
20
IS (OFF)
10
0
–4
–5
–6
–7
–8
ID (OFF)
–20
–40
–20
0
20
40
60
TEMPERATURE
80
100
–9
120
–10
100
1k
10k
100k
1M
FREQUENCY (Hz)
Figure 14. Bandwidth
Figure 11. Leakage Current vs. Temperature, VDD = 1.8 V
Rev. 0 | Page 9 of 16
10M
100M
05424-014
–10
05424-011
LEAKAGE (nA)
40
ADG841/ADG842
0
TA = 25°C
VDD = 3.3V/2.5V/1.8V
–20
–20
–40
–40
ON RESPONSE (dB)
–60
–80
–120
100
VDD = 1.8V
–60
–80
1k
10k
100k
1M
FREQUENCY (Hz)
10M
100M
–120
100
Figure 15. Off Isolation vs. Frequency
0.025
0.020
VDD = 1.8V; V p-p = 1V
0.015
VDD = 2.5V; V p-p = 2V
0.010
0
0
2
4
6
8
10
12
14
FREQUENCY (kHz)
16
18
20
05424-016
VDD = 3.3V; V p-p = 2V
0.005
1k
10k
100k
1M
FREQUENCY (Hz)
Figure 17. AC PSRR
0.030
THD + N (%)
VDD = 3.3V / 2.5V
–100
05424-015
–100
TA = 25°C
Figure 16. Total Harmonic Distortion + Noise
Rev. 0 | Page 10 of 16
10M
100M
05424-017
ON RESPONSE (dB)
0
ADG841/ADG842
TERMINOLOGY
IDD
Positive supply current.
CD, CS (ON)
On switch capacitance. Measured with reference to ground.
VD (VS)
Analog voltage on Terminals D and S.
CIN
Digital input capacitance.
RON
Ohmic resistance between D and S.
tON
Delay time between the 50% and the 90% points of the digital
input and switch on condition.
RFLAT (ON)
Flatness is the difference between the maximum and minimum
value of on resistance as measured over the specified analog
signal range.
IS (OFF)
Source leakage current with the switch off.
ID (OFF)
Drain leakage current with the switch off.
ID, IS (ON)
Channel leakage current with the switch on.
VINL
Maximum input voltage for Logic 0.
VINH
Minimum input voltage for Logic 1.
IINL (IINH)
Input current of the digital input.
CS (OFF)
Off switch source capacitance. Measured with reference to
ground.
CD (OFF)
Off switch drain capacitance. Measured with reference to
ground.
tOFF
Delay time between the 50% and the 90% points of the digital
input and switch off condition.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during on-off switching.
Off Isolation
A measure of unwanted signal coupling through an off switch.
−3 dB Bandwidth
The frequency at which the output is attenuated by 3 dB.
On Response
The frequency response of the on switch.
Insertion Loss
The loss due to the on resistance of the switch.
THD + N
The ratio of the harmonics amplitude plus noise of a signal to
the fundamental.
PSRR
Power Supply Rejection Ratio. This is a measure of the coupling
of unwanted ac signals on the power supply to the switch output
when the supply is not decoupled.
Rev. 0 | Page 11 of 16
ADG841/ADG842
TEST CIRCUITS
V
A
05424-017
IDS
VS
ID (OFF)
S
D
S
NC
VD
VS
Figure 18. On Resistance
D
A
VD
Figure 19. Off Leakage
Figure 20. On Leakage
VSS
VDD
0.1µF
0.1µF
VDD
VIN ADG841
50%
50%
VIN
50%
50%
VSS
S
D
VOUT
VS
ID (ON)
A
RL
300Ω
IN
CL
35pF
ADG842
90%
90%
VOUT
tON
tOFF
05424-020
GND
Figure 21. Switching Times, tON, tOFF
VDD
0.1µF
VIN
ADG842
D
VS
OFF
ON
VDD
S
VOUT
VIN
CL
1nF
IN
VOUT
ADG841
∆VOUT
QINJ = CL × ∆VOUT
05424-021
GND
Figure 22. Charge Injection
VDD
0.1µF
VDD
0.1µF
NETWORK
ANALYZER
VDD
S
NETWORK
ANALYZER
50Ω
VDD
50Ω
VS
D
RL
50Ω
GND
S
IN
VOUT
50Ω
50Ω
VS
D
VIN
RL
50Ω
GND
ADG841 – VIN = 0
ADG842 – VIN = 1
VIN
VOUT
VS
05424-022
OFF ISOLATION = 20 LOG
VOUT
INSERTION LOSS = 20 LOG
Figure 23. Off Isolation
VOUT WITH SWITCH
VOUT WITHOUT SWITCH
Figure 24. Bandwidth
Rev. 0 | Page 12 of 16
05424-023
IN
05424-019
IS (OFF)
D
05424-018
S
ADG841/ADG842
OUTLINE DIMENSIONS
2.20
2.00
1.80
1.35
1.25
1.15
6
5
4
1
2
3
2.40
2.10
1.80
PIN 1
0.65 BSC
1.30 BSC
1.00
0.90
0.70
1.10
0.80
0.10 MAX
0.30
0.15
SEATING
PLANE
0.40
0.10
0.22
0.08
0.30
0.10
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203-AB
Figure 25. 6-Lead Thin Shrink Small Outline Transistor [SC70]
(KS-6)
Dimensions shown in millimeters
ORDERING GUIDE
Model
ADG841YKSZ-500RL72
ADG841YKSZ-REEL2
ADG841YKSZ-REEL72
ADG842YKSZ-500RL72
ADG842YKSZ-REEL2
ADG842YKSZ-REEL2
1
2
Temperature Range
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
Package Description
6-Lead Thin Shrink Small Outline Transistor (SC70)
6-Lead Thin Shrink Small Outline Transistor (SC70)
6-Lead Thin Shrink Small Outline Transistor (SC70)
6-Lead Thin Shrink Small Outline Transistor (SC70)
6-Lead Thin Shrink Small Outline Transistor (SC70)
6-Lead Thin Shrink Small Outline Transistor (SC70)
Branding on this package is limited to three characters due to space constraints.
Z = Pb-free part.
Rev. 0 | Page 13 of 16
Package Option
KS-6
KS-6
KS-6
KS-6
KS-6
KS-6
Branding1
SVA
SVA
SVA
SWA
SWA
SWA
ADG841/ADG842
NOTES
Rev. 0 | Page 14 of 16
ADG841/ADG842
NOTES
Rev. 0 | Page 15 of 16
ADG841/ADG842
NOTES
© 2005 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D05424-0-4/05(0)
Rev. 0 | Page 16 of 16