Document Number: MRF8S7170N Rev. 0, 2/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) hD (%) Output PAR (dB) ACPR (dBc) 728 MHz 19.7 37.1 6.2 -38.7 748 MHz 19.5 37.0 6.1 -37.5 768 MHz 19.4 37.9 6.1 -37.8 728-768 MHz, 50 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET • Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ] 182 Watts CW CASE 2021-03, STYLE 1 OM-780-2 PLASTIC Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate-Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +70 Vdc Gate-Source Voltage VGS -6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Unit Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 170 W CW, 28 Vdc, IDQ = 1200 mA Case Temperature 81°C, 50 W CW, 28 Vdc, IDQ = 1200 mA °C/W RθJC 0.30 0.37 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF8S7170NR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1C (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 3 260 °C Per JESD22-A113, IPC/JEDEC J-STD-020 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 355 μAdc) VGS(th) 1.5 2.3 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) VGS(Q) 2.3 3.1 3.8 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.9 Adc) VDS(on) 0.1 0.22 0.3 Vdc Characteristic Off Characteristics On Characteristics Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg., f = 748 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 18.0 19.5 21.0 dB Drain Efficiency ηD 34.0 37.0 — % PAR 5.7 6.1 — dB ACPR — -37.5 -35.0 dBc IRL — -24 -9 dB Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) hD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 728 MHz 19.7 37.1 6.2 -38.7 -13 748 MHz 19.5 37.0 6.1 -37.5 -24 768 MHz 19.4 37.9 6.1 -37.8 -16 1. Part internally matched both on input and output. (continued) MRF8S7170NR3 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 728-768 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 182 — — 16 — W IMD Symmetry @ 160 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 65 — MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 50 W Avg. GF — 0.5 — dB Gain Variation over Temperature (-30 °C to +85°C) ΔG — 0.017 — dB/°C ΔP1dB — 0.0048 — dBm/°C Output Power Variation over Temperature (-30 °C to +85°C) MHz MRF8S7170NR3 RF Device Data Freescale Semiconductor 3 B1 C6 C7 C26 C22 C23 R1 C24 C25 C5 C4 R2 C9 C12 C13 C2 C3 CUT OUT AREA C1 C15 C10 C11 C20 C14 C8 C16 C17 C18 C19 MRF8S7170N Rev. 0 C21 Figure 1. MRF8S7170NR3 Test Circuit Component Layout Table 6. MRF8S7170NR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead, Short 2743019447 Fair-Rite C1 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C2 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC C3, C4 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC C5 47 μF, 63 V Electrolytic Capacitor 476KXM063M Illinois Capacitor C6 6.8 μF, 100 V Chip Capacitor C4532X7R1H685KT TDK C7 100 pF Chip Capacitor ATC100B101JT500XT ATC C8, C9 11 pF Chip Capacitors ATC100B110JT500XT ATC C10, C12 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C11, C13 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC C14 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC C15, C16, C17, C22, C23 39 pF Chip Capacitors ATC100B390JT500XT ATC C18, C19, C24, C25 10 μF, 25 V Chip Capacitors C5750X7R1E106KT TDK C20 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC C21, C26 470 μF, 63 V Electrolytic Capacitors 477KXM063M Illinois Capacitor R1 2K Ω, 1/4 W Chip Resistor CRCW12062K00FKEA Vishay R2 4.3 Ω, 1/4 W Chip Resistor CRCW12064R30FKEA Vishay PCB 0.030″, εr = 3.5 RF-35 Taconic MRF8S7170NR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 19.8 19.4 19 18.6 IRL -35.5 -7 -36 -1 1 -36.5 18.2 PARC -37 17.8 -37.5 17.4 17 710 ACPR 720 730 740 750 760 770 -38 790 780 -15 -19 -23 -27 0 -0.5 -1 -1.5 PARC (dB) Gps, POWER GAIN (dB) 20.2 IRL, INPUT RETURN LOSS (dB) 20.6 ηD, DRAIN EFFICIENCY (%) 40 VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1200 mA 38 Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth 36 ηD Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 34 Gps 32 ACPR (dBc) 21 -2 -2.5 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 2. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg. -10 -20 VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1200 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 748 MHz -30 IM3-U IM3-L IM5-U -40 IM5-L IM7-U -50 IM7-L -60 1 10 100 TWO-T ONE SPACING (MHz) Figure 3. Intermodulation Distortion Products versus Two-T one Spacing 18.5 18 17.5 17 0 -1 ACPR -1 dB = 42 W -2 dB = 60 W ηD -20 55 -25 50 -3 dB = 96 W -2 60 45 Gps 40 -3 VDD = 28 Vdc, IDQ = 1200 mA PARC f = 748 MHz, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF -4 -5 30 50 70 90 110 -30 -35 ACPR (dBc) 19 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 19.5 1 ηD, DRAIN EFFICIENCY (%) 20 -40 35 -45 30 130 -50 Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak-to-Average Ratio Compression (PARC) versus Output Power MRF8S7170NR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 22 -10 48 748 MHz 728 MHz 36 24 14 768 MHz ACPR 12 60 12 748 MHz 728 MHz ηD 10 1 10 -30 -40 -50 0 300 100 -20 ACPR (dBc) Gps, POWER GAIN (dB) 768 MHz VDD = 28 Vdc, IDQ = 1200 mA Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 16 0 ηD, DRAIN EFFICIENCY (%) Gps 20 18 72 728 MHz 748 MHz 768 MHz -60 Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 22 Gain -5 18 -10 16 -15 14 -20 IRL VDD = 28 Vdc Pin = 0 dBm IDQ = 1200 mA 12 10 600 700 650 IRL (dB) GAIN (dB) 20 -25 750 800 850 900 950 -30 1000 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W-CDMA TEST SIGNAL 100 10 0 -10 3.84 MHz Channel BW -20 1 Input Signal -30 0.1 (dB) PROBABILITY (%) 10 0.01 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 1 2 3 4 5 6 -40 -50 -60 +ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -70 -80 7 8 9 PEAK-T O-A VERAGE (dB) Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal 10 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 8. Single-Carrier W-CDMA Spectrum MRF8S7170NR3 6 RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 1200 mA, Pout = 50 W Avg. f MHz Zsource W Zload W 710 0.876 - j2.237 1.685 - j0.887 720 0.910 - j2.150 1.659 - j0.776 730 0.942 - j2.080 1.650 - j0.683 740 0.970 - j2.032 1.660 - j0.610 750 0.981 - j2.013 1.677 - j0.563 760 0.961 - j2.009 1.688 - j0.550 770 0.911 - j1.996 1.687 - j0.551 780 0.843 - j1.955 1.660 - j0.557 790 0.787 - j1.881 1.620 + j0.548 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S7170NR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 1200 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 60 Ideal Pout, OUTPUT POWER (dBm) 59 58 57 56 Actual 55 54 748 MHz 53 768 MHz 728 MHz 52 748 MHz 51 728 MHz 50 768 MHz 49 31 32 33 34 35 37 36 40 39 38 41 42 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 728 229 53.6 310 54.9 748 227 53.5 303 54.8 768 214 53.3 293 54.6 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 728 P1dB 0.61 - j2.32 0.72 - j1.32 748 P1dB 0.73 - j2.60 0.81 - j1.27 768 P1dB 0.72 - j2.82 0.58 - j1.46 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S7170NR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S7170NR3 RF Device Data Freescale Semiconductor 9 MRF8S7170NR3 10 RF Device Data Freescale Semiconductor MRF8S7170NR3 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Feb. 2010 Description • Initial Release of Data Sheet MRF8S7170NR3 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8S7170NR3 Document RF DeviceNumber: Data MRF8S7170N Rev. 0, 2/2010 Freescale Semiconductor 13