TI LM5119Q Lm5119/lm5119q wide input range dual synchronous buck controller Datasheet

LM5119/LM5119Q
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SNVS676G – AUGUST 2010 – REVISED JANUARY 2014
LM5119/LM5119Q Wide Input Range Dual Synchronous Buck Controller
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FEATURES
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DESCRIPTION
LM5119Q is an Automotive Grade product that
is AEC-Q100 grade 1 qualified (-40°C to 125°C
operating junction temperature)
Emulated peak current mode control
Wide operating range from 5.5 V to 65 V
Easily configurable for dual outputs or
interleaved single output
Robust 3.3 A peak gate drive
Switching frequency programmable to 750 kHz
Optional diode emulation mode
Programmable output from 0.8 V
Precision 1.5% voltage reference
Programmable current limit
Hiccup mode overload protection
Programmable soft-start
Programmable line under-voltage lockout
Automatic switch-over to external bias supply
Channel2 enable logic input
Thermal Shutdown
Leadless WQFN-32 (5 mm x 5 mm) package
The LM5119 is a dual synchronous buck controller
intended for step-down regulator applications from a
high voltage or widely varying input supply. The
control method is based upon current mode control
utilizing an emulated current ramp. Current mode
control provides inherent line feed-forward, cycle-bycycle current limiting and ease of loop compensation.
The use of an emulated control ramp reduces noise
sensitivity of the pulse-width modulation circuit,
allowing reliable control of very small duty cycles
necessary in high input voltage applications. The
switching frequency is programmable from 50 kHz to
750 kHz. The LM5119 drives external high-side and
low-side NMOS power switches with adaptive deadtime control. A user-selectable diode emulation mode
enables discontinuous mode operation for improved
efficiency at light load conditions. A high voltage bias
regulator with automatic switch-over to external bias
further improves efficiency. Additional features
include thermal shutdown, frequency synchronization,
cycle-by-cycle and hiccup mode current limit and
adjustable line under-voltage lockout. The device is
available in a power enhanced leadless WQFN-32
package featuring an exposed die attach pad to aid
thermal dissipation.
Typical Application Circuit
VIN
VIN
VCC1
VCC2
HB1
VOUT1
HB2
HO1
HO2
SW1
SW2
LO1
VOUT2
LO2
CS1
CSG1
CS2
CSG2
LM5119
PGND1
PGND2
RAMP1
RAMP2
FB1
FB2
VIN
COMP1
UVLO
COMP2
AGND
SS1
RT
RES
SS2
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010–2014, Texas Instruments Incorporated
LM5119/LM5119Q
SNVS676G – AUGUST 2010 – REVISED JANUARY 2014
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SW1
HO1
HB1
VIN
UVLO
HB2
HO2
SW2
Connection Diagram
32
31
30
29
28
27
26
25
VCC1
1
24
VCC2
LO1
2
23
LO2
PGND1
3
22
PGND2
CSG1
4
21
CSG2
CS1
5
20
CS2
RAMP1
6
19
RAMP2
SS1
7
18
SS2
VCCDIS
8
17
DEMB
10
11
12
13
14
15
16
EN2
AGND
RT
RES
COMP2
FB2
FB1
9
COMP1
Exposed Pad on Bottom
Connect to Ground
Figure 1. Top View
WQFN-32
2
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Pin Functions
Pin Descriptions
Pin
Name
Description
1
VCC1
Bias supply pin. Locally decouple to PGND1 using a low ESR/ESL capacitor located as close to
controller as possible.
2
LO1
Low side MOSFET gate drive output. Connect to the gate of the channel1 low-side synchronous
MOSFET through a short, low inductance path.
3
PGND1
Power ground return pin for low side MOSFET gate driver. Connect directly to the low side of the
channel1 current sense resistor.
4
CSG1
Kelvin ground connection to the external current sense resistor. Connect directly to the low side of the
channel1 current sense resistor.
5
CS1
6
RAMP1
PWM ramp signal. An external resistor and capacitor connected between the SW1 pin, the RAMP1 pin
and the AGND pin sets the channel1 PWM ramp slope. Proper selection of component values
produces a RAMP1 signal that emulates the current in the buck inductor.
7
SS1
An external capacitor and an internal 10 µA current source set the ramp rate of the channel1 error amp
reference. The SS1 pin is held low when VCC1 or VCC2 < 4.9 V, UVLO < 1.25 V or during thermal
shutdown.
8
VCCDIS
Optional input that disables the internal VCC regulators when external biasing is supplied. If VCCDIS
>1.25 V, the internal VCC regulators are disabled. The externally supplied bias should be coupled to
the VCC pins through a diode. VCCDIS has a 500 kΩ pull-down resistor to ground to enable the VCC
regulators when the pin is left floating. The pull-down resistor can be overridden by pulling VCCDIS
above 1.25 V with a resistor divider connected to the external bias supply.
9
FB1
Feedback input and inverting input of the channel1 internal error amplifier. A resistor divider from the
channel1 output to this pin sets the output voltage level. The regulation threshold at the FB1 pin is 0.8
V.
10
COMP1
Output of the channel1 internal error amplifier. The loop compensation network should be connected
between this pin and the FB1 pin.
11
EN2
If the EN2 pin is low, channel2 will be disabled. Channel1 and all other functions remain active. The
EN2 has a 50 kΩ pull-up resistor to enable channel2 when the pin is left floating.
12
AGND
13
RT
The internal oscillator is set with a single resistor between RT and AGND. The recommended
maximum oscillator frequency is 1.5 MHz which corresponds to a maximum switching frequency of
750kHz for either channel. The internal oscillator can be synchronized to an external clock by coupling
a positive pulse into RT through a small coupling capacitor.
14
RES
The restart timer pin for an external capacitor that configures the hiccup mode current limiting. A
capacitor on the RES pin determines the time the controller will remain off before automatically
restarting in hiccup mode. The two regulator channels operate independently. One channel may
operate in normal mode while the other is in hiccup mode overload protection. The hiccup mode
commences when either channel experiences 256 consecutive PWM cycles with cycle-by-cycle current
limiting. After this occurs, a 10 µA current source charges the RES pin capacitor to the 1.25 V
threshold which restarts the overloaded channel.
15
COMP2
16
FB2
Feedback input and inverting input of the channel2 internal error amplifier. A resistor divider from the
channel2 output to this pin sets the output voltage level. The regulation threshold at the FB2 pin is 0.8
V.
17
DEMB
Logic input that enables diode emulation when in the low state. In diode emulation mode, the low side
MOSFET is latched off for the remainder of the PWM cycle when the buck inductor current reverses
direction (current flow from output to ground). When DEMB is high, diode emulation is disabled
allowing current to flow in either direction through the low side MOSFET. A 50 kΩ pull-down resistor
internal to the LM5119 holds DEMB pin low and enables diode emulation if the pin is left floating.
18
SS2
An external capacitor and an internal 10 µA current source set the ramp rate of the channel2 error amp
reference. The SS2 pin is held low when VCC1 or VCC2 < 4.9 V, UVLO < 1.25 V or during thermal
shutdown.
19
RAMP2
PWM ramp signal. An external resistor and capacitor connected between the SW2 pin, the RAMP2 pin
and the AGND pin sets the channel2 PWM ramp slope. Proper selection of component values
produces a RAMP2 signal that emulates the current in the buck inductor.
20
CS2
21
CSG2
Current sense amplifier input. Connect to the high side of the channel1 current sense resistor.
Analog ground. Return for the internal 0.8 V voltage reference and analog circuits.
Output of the channel2 internal error amplifier. The loop compensation network should be connected
between this pin and the FB2 pin.
Current sense amplifier input. Connect to the high side of the channel2 current sense resistor.
Kelvin ground connection to the external current sense resistor. Connect directly to the low side of the
channel2 current sense resistor.
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Pin Descriptions (continued)
Pin
Name
22
PGND2
Description
Power ground return pin for low side MOSFET gate driver. Connect directly to the low side of the
channel2 current sense resistor.
23
LO2
Low side MOSFET gate drive output. Connect to the gate of the channel2 low-side synchronous
MOSFET through a short, low inductance path.
24
VCC2
Bias supply pin. Locally decouple to PGND2 using a low ESR/ESL capacitor located as close to
controller as possible.
25
SW2
Switching node of the buck regulator. Connect to channel2 bootstrap capacitor, the source terminal of
the high-side MOSFET and the drain terminal of the low-side MOSFET.
26
HO2
High side MOSFET gate drive output. Connect to the gate of the channel2 high-side MOSFET through
a short, low inductance path.
27
HB2
High-side driver supply for bootstrap gate drive. Connect to the cathode of the channel2 external
bootstrap diode and to the bootstrap capacitor. The bootstrap capacitor supplies current to charge the
high side MOSFET gate and should be placed as close to the controller as possible.
28
UVLO
Under-voltage lockout programming pin. If the UVLO pin is below 0.4 V, the regulator will be in the
shutdown mode with all function disabled. If the UVLO pin is greater than 0.4 V and below 1.25 V, the
regulator will be in standby mode with the VCC regulators operational, the SS pins grounded and no
switching at the HO and LO outputs. If the UVLO pin voltage is above 1.25 V, the SS pins are allowed
to ramp and pulse width modulated gate drive signals are delivered at the LO and HO pins. A 20 µA
current source is enabled when UVLO exceeds 1.25 V and flows through the external UVLO resistors
to provide hysteresis.
29
VIN
Supply voltage input source for the VCC regulators.
30
HB1
High-side driver supply for bootstrap gate drive. Connect to the cathode of the channel1 external
bootstrap diode and to the bootstrap capacitor. The bootstrap capacitor supplies current to charge the
high side MOSFET gate and should be placed as close to controller as possible.
31
HO1
High side MOSFET gate drive output. Connect to the gate of the channel1 high-side MOSFET through
a short, low inductance path.
32
SW1
Switching node of the buck regulator. Connect to channel1 bootstrap capacitor, the source terminal of
the high-side MOSFET and the drain terminal of the low-side MOSFET.
EP
EP
Exposed pad of WQFN package. No internal electrical connections. Solder to the ground plane to
reduce thermal resistance.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
VIN to AGND
–0.3 to 75 V
SW1, SW2 to AGND
–3.0 to 75 V
HB1 to SW1, HB2 to SW2
–0.3 to 15 V
(2)
–0.3 to 15 V
VCC1, VCC2 to AGND
FB1, FB2, DEMB, RES, VCCDIS, UVLO to AGND
HO1 to SW1, HO2 to SW2
–0.3 to 15 V
–0.3 to HB +0.3 V
LO1, LO2 to AGND
–0.3 to VCC +0.3 V
SS1, SS2 to AGND
–0.3 to 7 V
EN2, RT to AGND
–0.3 to 7 V
CS1, CS2, CSG1, CSG2 to AGND
-0.3 V to 0.3 V
PGND to AGND
-0.3 V to 0.3 V
ESD Rating HBM
(3)
2 kV
Storage Temperature
-55°C to +150°C
Junction Temperature
+150°C
(1)
(2)
(3)
4
Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the
device is intended to be functional. For specifications and test conditions, see Electrical Characteristics.
These pins must not exceed VIN
Per VCC Regulator.
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Operating Ratings
SNVS676G – AUGUST 2010 – REVISED JANUARY 2014
(1)
VIN
5.5 V to 65 V
VCC
5.5 V to 14 V
HB to SW
5.5 V to 14 V
Junction Temperature
(1)
–40°C to +125°C
Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the
device is intended to be functional. For specifications and test conditions, see Electrical Characteristics.
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Electrical Characteristics
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature range of –40°C to
+125°C. Unless otherwise specified, the following conditions apply: VIN = 36 V, VCC = 8 V, VCCDIS = 0V, EN2 = 5 V, RT =
25 kΩ, no load on LO and HO. Electrical characteristics are per channel where applicable. See (1), (2), and (3).
Symbol
Parameter
Conditions
IBIAS
VIN Operating Current
SS1 = SS2 = 0 V
IVCC
VCC1 Operating Current
VCC2 Operating Current
Min
Typ
Max
Units
6
7.3
mA
VCCDIS = 2V, SS1 = SS2 = 0 V
400
550
µA
VCCDIS = 2 V, SS1 = SS2 = 0 V
3.9
4.5
mA
VCCDIS = 2 V, SS1 = SS2 = 0 V
1.4
2.0
mA
UVLO = 0 V, SS1 = SS2 = 0 V
18
50
µA
6.77
7.6
8.34
V
5.9
5.95
VIN Supply
ISHUTDOWN VIN Shutdown Current
VCC Regulator (4)
VCC(REG)
VCC Regulation
VCC Regulation
VIN = 6 V, No external load
VCC Sourcing Current Limit
VCC = 0 V
VCCDIS Switch Threshold
VCCDIS Rising
25
40
1.19
1.25
VCCDIS Switch Hysteresis
V
mA
1.29
0.07
VCCDIS Input Current
VCCDIS = 0 V
VCC Under-voltage Threshold
Positive going VCC
V
–20
4.7
VCC Under-voltage Hysteresis
4.9
V
nA
5.2
0.2
V
V
EN2 Input
VIL
EN2 Input Low Threshold
VIH
EN2 Input High Threshold
2.0
2.9
EN2 Input pull-up resistor
1.5
V
2.5
V
50
kΩ
UVLO
UVLO Threshold
UVLO Rising
1.20
1.25
1.29
V
UVLO Hysterisis Current
UVLO = 1.4 V
15
20
25
µA
UVLO Shutdown Threshold
0.4
V
UVLO Shutdown Hysteresis Voltage
0.1
V
Soft Start
SS Current Source
SS = 0 V
7
SS Pull Down RDSON
10
13
µA
Ω
10
Error Amplifier
VREF
FB Reference Voltage
Measured at FB pin, FB = COMP
FB Input Bias Current
FB = 0.8 V
FB Disable Threshold
Interleaved Threshold
COMP VOH
Isource = 3 mA
COMP VOL
Isink = 3 mA
0.788
0.8
0.812
V
1
nA
2.5
V
2.8
V
0.31
V
AOL
DC Gain
80
dB
fBW
Unity Gain Bandwidth
3
MHz
PWM Comparators
tHO(OFF)
Forced HO Off-time
tON(min)
Minimum HO On-time
(1)
(2)
(3)
(4)
6
220
CRAMP = 50 pF
320
100
430
ns
ns
Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the
device is intended to be functional. For specifications and test conditions, see Electrical Characteristics.
These pins must not exceed VIN
Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate Texas Instrument's Average Outgoing Quality Level
(AOQL).
Per VCC Regulator.
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Electrical Characteristics (continued)
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature range of –40°C to
+125°C. Unless otherwise specified, the following conditions apply: VIN = 36 V, VCC = 8 V, VCCDIS = 0V, EN2 = 5 V, RT =
25 kΩ, no load on LO and HO. Electrical characteristics are per channel where applicable. See (1), (2), and (3).
Symbol
Parameter
Conditions
Min
Typ
Max
Units
fSW1
Frequency 1
RT = 25 kΩ
180
200
220
kHz
fSW2
Frequency 2
RT = 10 kΩ
430
480
530
kHz
Oscillator
RT Output Voltage
1.25
RT Sync Positive Threshold
2.5
Sync Pulse Minimum Width
100
3.2
V
4
V
ns
Current Limit
VCS(TH)
Cycle-by-cycle Sense Voltage
Threshold (CS - CSG)
RAMP = 0
CS Bias Current
CS = 0 V
106
Hiccup Mode Fault Timer
120
134
–70
–95
256
mV
µA
Cycles
RES
IRES
RES current Source
VRES
RES threshold
9.7
CRES Charging
1.20
µA
1.25
1.30
V
2.0
1.65
V
Diode Emulation
VIL
DEMB Input Low Threshold
VIH
DEMB Input High Threshold
2.6
V
DEMB Input Pull-Down Resistance
2.9
50
kΩ
SW Zero Cross Threshold
-5
mV
LO Gate Driver
VOLL
LO Low-state Output Voltage
ILO = 100 mA
0.1
0.18
V
VOHL
LO High-state Output Voltage
ILO = –100 mA,
VOHL = VCC - VLO
0.17
0.26
V
LO Rise Time
C-load = 1000 pF
6
ns
LO Fall Time
C-load = 1000 pF
5
ns
IOHL
Peak LO Source Current
VLO = 0 V
2.5
A
IOLL
Peak LO Sink Current
VLO = VCC
3.3
A
HO Gate Driver
VOLH
HO Low-state Output Voltage
IHO = 100 mA
0.11
0.19
VOHH
HO High-state Output Voltage
IHO = –100 mA, VOHH = VHB - VHO
0.18
0.27
HO Rise Time
C-load = 1000 pF
6
ns
HO Fall Time
C-load = 1000 pF
5
ns
IOHH
Peak HO Source Current
VHO = 0 V, SW = 0, HB = 8 V
2.2
A
IOLH
Peak HO Sink Current
VHO = VHB = 8 V
3.3
A
HB to SW Under-voltage
HB DC Bias Current
3
V
V
V
HB - SW = 8 V
70
100
µA
LO Fall to HO Rise Delay
No load
70
ns
HO Fall to LO Rise Delay
No load
60
ns
Thermal Shutdown
Rising
SWITCHING CHARACTERISTICS
THERMAL
TSD
165
°C
Thermal Shutdown Hysteresis
25
°C
θJA
Junction to Ambient
40
°C/W
θJC
Junction to Case
4
°C/W
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Typical Performance Characteristics
8
HO Peak Driver Current
vs
Output Voltage
LO Peak Driver Current
vs
Output Voltage
Driver Dead Time
vs
VCC
Driver Dead Time
vs
Temperature
VCC
vs
IVCC
Switching Frequency
vs
RT
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Typical Performance Characteristics (continued)
Error Amp Gain and Phase
vs
Frequency
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BLOCK DIAGRAM
COMMON
VIN
CLK 1
COMMON BIAS
GENERATOR
RT
OSCILLATOR /
SYNC DETECTOR
CLK 2
BIAS
0.8V
AGND
UVLO
UVLO
LOGIC
CHANNEL 1
SHUTDOWN
STANDBY
CONTROL
CHANNEL 2
THERMAL
SHUTDOWN
CHANNEL 1
STANDBY
RES Current
10 PA
RES
CHANNEL 2
STANDBY
VCC
REGULATORS
VCCDIS
VCC DISABLE
LOGIC
500 k:
HICCUP
FAULT TIMER
256 CYCLES
RESTART
LOGIC
CHANNEL 1
CHANNEL 1
FAULT
DEMB
LOGIC
DECODER
CHANNEL 2
CHANNEL 2
FAULT
50 k:
CHANNEL 1
VIN
VCC1
7.6V
REGULATOR
VCC
UVLO
VCC DISABLE
LOGIC
HB1
SS1 Current
10 PA
1.2V
SS1
FB1
+
0.8V
+
-
+
-
DISABLE
HB
UVLO
CLK 1
+
S
Q
R
Q
HO1
LEVEL SHIFT/
ADAPTIVE
TIMER
DRIVER
SW1
VCC1
+
-
COMP1
LO1
DRIVER
LOGIC DECODER/
DIODE EMULATION
1.2V
RAMP1
CS1
TRACK
SAMPLE
and
HOLD
+
-
CSG1
A = 10
PGND1
CLK 1
CHANNEL 2
VIN
VCC2
7.6V
REGULATOR
VCC
UVLO
50 k:
EN2
VCC DISABLE
LOGIC
HB2
SS2 Current
10 PA
+
0.8V
+
-
COMP2
+
-
CLK 2
+
Q
R
Q
EN2
LOGIC
LEVEL SHIFT/
ADAPTIVE
TIMER
HO2
DRIVER
SW2
VCC2
+
-
LO2
1.2V
RAMP2
S
DISABLE
LOGIC DECODER/
DIODE EMULATION
TRACK
SAMPLE
and
HOLD
DRIVER
CS2
+
-
FB2
HB
UVLO
1.2V
SS2
CSG2
A = 10
PGND2
CLK 2
Figure 2. Block Diagram
10
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DETAILED OPERATING DESCRIPTION
The LM5119 high voltage switching regulator features all of the functions necessary to implement an efficient
dual channel buck regulator that operates over a very wide input voltage range. The LM5119 may be configured
as two independent regulators or as a single high current regulator with two interleaved channels. This easy to
use regulator integrates high-side and low-side MOSFET drivers capable of supplying peak currents of 2.5 A
(VCC = 8 V). The regulator control method is based on current mode control utilizing an emulated current ramp.
Emulated peak current mode control provides inherent line feed-forward, cycle-by-cycle current limiting and ease
of loop compensation. The use of an emulated control ramp reduces noise sensitivity of the pulse-width
modulation circuit, allowing reliable processing of the very small duty cycles necessary in high input voltage
applications. The switching frequency is user programmable from 50 kHz to 750 kHz. An
oscillator/synchronization pin allows the operating frequency to be set by a single resistor or synchronized to an
external clock. An under-voltage lockout and channel2 enable pin allows either both regulators to be disabled or
channel2 to be disabled with full operation of channel1. Fault protection features include current limiting, thermal
shutdown and remote shutdown capability. The under-voltage lockout input enables both channels when the
input voltage reaches a user selected threshold and provides a very low quiescent shutdown current when pulled
low. The WQFN-32 package features an exposed pad to aid in thermal dissipation.
FUNCTIONAL DESCRIPTION
High Voltage Start-Up Regulator
The LM5119 contains two internal high voltage bias regulators, VCC1 and VCC2, that provide the bias supply for
the PWM controllers and gate drive for the MOSFETs of each regulator channel. The input pin (VIN) can be
connected directly to an input voltage source as high as 65 V. The outputs of the VCC regulators are set to 7.6
V. When the input voltage is below the VCC set-point level, the VCC output will track the VIN with a small
dropout voltage. If VCC1 is in an under voltage condition, channel2 will be disabled. This interdependence is
necessary to prevent channel2 from running open loop in the single output interleaved mode when the channel2
error amplifier is disabled (if either VCC is in UV, both channels are disabled).
The outputs of the VCC regulators are current limited at 25 mA (minimum) output capability. Upon power-up, the
regulators source current into the capacitors connected to the VCC pins. When the voltage at the VCC pins
exceed 4.9 V and the UVLO pin is greater than 1.25 V, both channels are enabled and a soft-start sequence
begins. Both channels remain enabled until either VCC pin falls below 4.7 V, the UVLO pin falls below 1.25 V or
the die temperature exceeds the thermal limit threshold.
When operating at higher input voltages the bias power dissipation within the controller can be excessive. An
output voltage derived bias supply can be applied to a VCC pins to reduce the IC power dissipation. The
VCCDIS input can be used to disable the internal VCC regulators when external biasing is supplied. If VCCDIS
>1.25 V, the internal VCC regulators are disabled. The externally supplied bias should be coupled to the VCC
pins through a diode, preferably a Schottky (low forward voltage). VCCDIS has a 500 kΩ internal pull-down
resistance to ground for normal operation with no external bias. The internal pull-down resistance can be
overridden by pulling VCCDIS above 1.25 V through a resistor divider connected to an external bias supply.
The VCC regulator series pass transistor includes a diode between VCC and VIN that should not be forward
biased in normal operation.
If the external bias winding can supply VCC greater than VIN, an external blocking diode is required from the
input power supply to the VIN pin to prevent the external bias supply from passing current to the input supply
through the VCC pins. For VOUT between 6 V and 14.5 V, VOUT can be connected directly to VCC through a
diode. For VOUT < 6 V, a bias winding on the output inductor can be added as shown in Figure 3.
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VCC
VOUT
SW
L
COUT
Figure 3. VCC Bias Supply with Additional Inductor Winding
In high voltage applications extra care should be taken to ensure the VIN pin does not exceed the absolute
maximum voltage rating of 75 V. During line or load transients, voltage ringing on the VIN line that exceeds the
Absolute Maximum Rating can damage the IC. Both careful PC board layout and the use of quality bypass
capacitors located close to the VIN and AGND pins are essential.
UVLO
The LM5119 contains a dual level under-voltage lockout (UVLO) circuit. When the UVLO pin is less than 0.4 V,
the LM5119 is in shutdown mode. The shutdown comparator provides 100mV of hysteresis to avoid chatter
during transitions. When the UVLO pin voltage is greater than 0.4 V but less than 1.25 V, the controller is in
standby mode. In the standby mode the VCC bias regulators are active but the controller outputs are disabled.
This feature allows the UVLO pin to be used as a remote enable/disable function. When the VCC outputs exceed
their respective under-voltage thresholds (4.9 V) and the UVLO pin voltage is greater than 1.25 V, the outputs
are enabled and normal operation begins.
An external set-point voltage divider from the VIN to GND is used to set the minimum VIN operating voltage of
the regulator. The divider must be designed such that the voltage at the UVLO pin will be greater than 1.25 V
when the input voltage is in the desired operating range. UVLO hysteresis is accomplished with an internal 20 μA
current source that is switched on or off into the impedance of the set-point divider. When the UVLO pin voltage
exceeds 1.25 V threshold, the current source is activated to quickly raise the voltage at the UVLO pin. When the
UVLO pin voltage falls below the 1.25 V threshold, the current source is turned off causing the voltage at the
UVLO pin to quickly fall. The UVLO pin should not be left floating.
Enable 2
The LM5119 contains an enable function allowing shutdown control of channel2, independent of channel1. If the
EN2 pin is pulled below 2.0 V, channel2 enters shutdown mode. If the EN2 input is greater than 2.5 V, channel2
returns to normal operation. An internal 50 kΩ pull-up resistor on the EN2 pin allows this pin to be left floating for
normal operation. The EN2 input can be used in conjunction with the UVLO pin to sequence the two regulator
channels. If EN2 is held low as the UVLO pin increases to a voltage greater than the 1.25 V UVLO threshold,
channel1 will begin operation while channel2 remains off. Both channels become operational when the UVLO,
EN2, VCC1, and VCC2 pins are above their respective operating thresholds. Either channel of the LM5119 can
also be disabled independently by pulling the corresponding SS pin to AGND.
Oscillator and Sync Capability
The LM5119 switching frequency is set by a single external resistor connected between the RT pin and the
AGND pin (RT). The resistor should be located very close to the device and connected directly to the pins of the
IC (RT and AGND). To set a desired switching frequency (fSW) of each channel, the resistor can be calculated
from the following equation:
9
RT =
5.2 x 10
- 948
fSW
(1)
Where RT is in ohms and fSW is in Hertz. The frequency fSW is the output switching frequency of each channel.
The internal oscillator runs at twice the switching frequency and an internal frequency divider interleaves the two
channels with 180° phase shift between PWM pulses at the HO pins.
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The RT pin can be used to synchronize the internal oscillator to an external clock. The internal oscillator can be
synchronized by AC coupling a positive edge into the RT pin. The voltage at the RT pin is nominally 1.25 V and
the voltage at the RT pin must exceed 4 V to trip the internal synchronization pulse detector. A 5 V amplitude
signal and 100 pF coupling capacitor are recommended. Synchronizing at greater than twice the free-running
frequency may result in abnormal behavior of the pulse width modulator. Also, note that the output switching
frequency of each channel will be one-half the applied synchronization frequency.
Error Amplifiers and PWM Comparators
Each of the two internal high-gain error amplifiers generates an error signal proportional to the difference
between the regulated output voltage and an internal precision reference (0.8 V). The output of each error
amplifier is connected to the COMP pin allowing the user to provide loop compensation components. Generally a
Type II network is recommended. This network creates a pole at 0 Hz, a mid-band zero, and a noise reducing
high frequency pole. The PWM comparator compares the emulated current sense signal from the RAMP
generator to the error amplifier output voltage at the COMP pin. Only one error amplifier is required when
configuring the controller as a two channel, single output interleaved regulator. For these applications, the
channel1 error amplifier (FB1, COMP1) is configured as the master error amplifier. The channel2 error amplifier
must be disabled by connecting the FB2 pin to the VCC2 pin. When configured in this manner the output of the
channel2 error amplifier (COMP2) will be disabled and have a high output impedance. To complete the
interleaved configuration the COMP1 and the COMP2 pins should be connected together to facilitate PWM
control of channel2 and current sharing between channels.
Ramp Generator
The ramp signal used in the pulse width modulator for current mode control is typically derived directly from the
buck switch current. This switch current corresponds to the positive slope portion of the inductor current. Using
this signal for the PWM ramp simplifies the control loop transfer function to a single pole response and provides
inherent input voltage feed-forward compensation. The disadvantage of using the buck switch current signal for
PWM control is the large leading edge spike due to circuit parasitics that must be filtered or blanked. Also, the
current measurement may introduce significant propagation delays. The filtering, blanking time and propagation
delay limit the minimum achievable pulse width. In applications where the input voltage may be relatively large in
comparison to the output voltage, controlling small pulse widths and duty cycles are necessary for regulation.
The LM5119 utilizes a unique ramp generator which does not actually measure the buck switch current but rather
reconstructs the signal. Representing or emulating the inductor current provides a ramp signal to the PWM
comparator that is free of leading edge spikes and measurement or filtering delays. The current reconstruction is
comprised of two elements; a sample-and-hold DC level and the emulated inductor current ramp as shown in
Figure 4.
RAMP =
RAMP
Sample and
Hold DC Level
VIN x tON
RRAMP x CRAMP
10 x RS V/A
tON
Figure 4. Composition of Current Sense Signal
The sample-and-hold DC level is derived from a measurement of the recirculating current flowing through the
current sense resistor. The voltage across the sense resistor is sampled and held just prior to the onset of the
next conduction interval of the buck switch. The current sensing and sample-and-hold provide the DC level of the
reconstructed current signal. The positive slope inductor current ramp is emulated by an external capacitor
connected from RAMP pin to AGND and a series resistor connected between SW and RAMP. The ramp resistor
should not be connected to VIN directly because the RAMP pin voltage rating could be exceeded under high VIN
conditions. The ramp created by the external resistor and capacitor will have a slope proportional to the rising
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inductor current plus some additional slope required for slope compensation. Connecting the RAMP pin resistor
to SW provides optimum slope compensation with a RAMP capacitor slope that is proportional to VIN. This
“adaptive slope compensation” eliminates the requirement for additional slope compensation circuitry with high
output voltage set points and frees the user from additional concerns in this area. The emulated ramp signal is
approximately linear and the ramp slope is given by:
dVRAMP 10 x K x VIN x RS
=
dt
L
(2)
The factor of 10 in Equation 2 corresponds to the internal current sense amplifier gain of the LM5119. The K
factor is a constant which adds additional slope for robust pulse-width modulation control at lower input voltages.
In practice this constant can be varied from 1 to 3. RS is the external sense resistor value.
The voltage on the ramp capacitor is given by:
tPERIOD
VRAMP = VIN x (1 - e RRAMP x CRAMP )
(3)
V xt
VRAMP IN PERIOD
RRAMP x CRAMP
(4)
The approximation is the first order term in a Taylor Series expansion of the exponential and is valid since tPERIOD
is small relative to the RAMP pin R-C time constant.
Multiplying Equation 2 by tPERIOD to convert the slope to a peak voltage, and then equating Equation 2 with
Equation 4 allows us to solve for CRAMP:
CRAMP =
L
10 x RS x K x RRAMP
(5)
Choose either CRAMP or RRAMP and use Equation 5 to calculate the other component.
The difference between the average inductor current and the DC value of the sampled inductor current can
cause instability for certain operating conditions. This instability is known as sub-harmonic oscillation, which
occurs when the inductor ripple current does not return to its initial value by the start of next switching cycle.
Sub-harmonic oscillation is normally characterized by alternating wide and narrow pulses at the switch node. The
ramp equation above contains the optimum amount of slope compensation, however extra slope compensation is
easily added by selecting a lower value for RRAMP or CRAMP.
Current Limit
The LM5119 contains a current limit monitoring scheme to protect the regulator from possible over-current
conditions. When set correctly, the emulated current signal is proportional to the buck switch current with a scale
factor determined by the current limit sense resistor, RS, and current sense amplifier gain. The emulated signal is
applied to the current limit comparator. If the emulated ramp signal exceeds 1.2 V, the present cycle is
terminated (cycle-by-cycle current limiting). Shown in Figure 5 is the current limit comparator and a simplified
current measurement schematic. In applications with small output inductance and high input voltage, the switch
current may overshoot due to the propagation delay of the current limit comparator. If an overshoot should occur,
the sample-and-hold circuit will detect the excess recirculating current before the buck switch is turned on again.
If the sample-and-hold DC level exceeds the internal current limit threshold, the buck switch will be disabled and
skip pulses until the current has decayed below the current limit threshold. This approach prevents current
runaway conditions due to propagation delays or inductor saturation since the inductor current is forced to decay
to a controlled level following any current overshoot.
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CURRENT LIMIT
COMPARATOR
CURRENT SENSE
AMPLIFIER
1.2V
CS
CLK
-
RS
IL
+
+
A=10
CSG
RAMP
HO
SW
RRAMP
CRAMP
Figure 5. Current Limit and Ramp Circuit
Hiccup Mode Current Limiting
To further protect the regulator during prolonged current limit conditions, an internal counter counts the PWM
clock cycles during which cycle-by-cycle current limiting occurs. When the counter detects 256 consecutive
cycles of current limiting, the regulator enters a low power dissipation hiccup mode with the HO and LO outputs
disabled. The restart timer pin, RES, and an external capacitor configure the hiccup mode current limiting. A
capacitor on the RES pin (CRES) determines the time the controller will remain in low power standby mode before
automatically restarting. A 10 µA current source charges the RES pin capacitor to the 1.25 V threshold which
restarts the overloaded channel. The two regulator channels operate independently. One channel may operate
normally while the other is in the hiccup mode overload protection. The hiccup mode commences when either
channel experiences 256 consecutive PWM cycles with cycle-by-cycle current limiting. If that occurs, the
overloaded channel will turn off and remain off for the duration of the RES pin timer.
The hiccup mode current limiting function can be disabled. The RES configuration is latched during initial powerup when UVLO is above 1.25 V and VCC1 and VCC2 are above their UV thresholds, determining hiccup or nonhiccup current limiting. If the RES pin is tied to VCC at initial power-on, hiccup current limit is disabled.
Soft-Start
The soft-start feature allows the regulator to gradually reach the steady state operating point, thus reducing startup stresses and surges. The LM5119 will regulate the FB pin to the SS pin voltage or the internal 0.8 V
reference, whichever is lower. At the beginning of the soft-start sequence when SS = 0 V, the internal 10 µA softstart current source gradually increases the voltage on an external soft-start capacitor (CSS) connected to the SS
pin resulting in a gradual rise of the FB and output voltages.
Either regulator channel of the LM5119 can be disabled by pulling the corresponding SS pin to AGND.
Diode Emulation
A fully synchronous buck regulator implemented with a free-wheel MOSFET rather than a diode has the
capability to sink current from the output in certain conditions such as light load, over-voltage or pre-bias startup.
The LM5119 provides a diode emulation feature that can be enabled to prevent reverse (drain to source) current
flow in the low side free-wheel MOSFET. When configured for diode emulation, the low side MOSFET is disabled
when reverse current flow is detected. The benefit of this configuration is lower power loss at no load or light load
conditions and the ability to turn on into a pre-biased output without discharging the output. The diode emulation
mode allows for start-up into pre-biased loads, since it prevents reverse current flow as the soft-start capacitor
charges to the regulation level during startup. The negative effect of diode emulation is degraded light load
transient response times. Enabling the diode emulation feature is recommended and allows discontinuous
conduction operation. The diode emulation feature is configured with the DEMB pin. To enable diode emulation,
connect the DEMB pin to ground or leave the pin floating. If continuous conduction operation is desired, the
DEMB pin should be tied to either VCC1 or VCC2.
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HO and LO Output Drivers
The LM5119 contains a high current, high-side driver and associated high voltage level shift to drive the buck
switch of each regulator channel. This gate driver circuit works in conjunction with an external diode and
bootstrap capacitor. A 0.1 µF or larger ceramic capacitor, connected with short traces between the HB pin and
SW pin, is recommended. During the off-time of the high-side MOSFET, the SW pin voltage is approximately 0 V
and the bootstrap capacitor charges from VCC through the external bootstrap diode. When operating with a high
PWM duty cycle, the buck switch will be forced off each cycle for 320ns to ensure that the bootstrap capacitor is
recharged.
The LO and HO outputs are controlled with an adaptive dead-time methodology which insures that both outputs
are never enabled at the same time. When the controller commands HO to be enabled, the adaptive dead-time
logic first disables LO and waits for the LO voltage to drop. HO is then enabled after a small delay. Similarly, the
LO turn-on is disabled until the HO voltage has discharged. This methodology insures adequate dead-time for
any size MOSFET.
Care should be exercised in selecting an output MOSFET with the appropriate threshold voltage, especially if
VCC is supplied from the regulator output. During startup at low input voltages the MOSFET threshold should be
lower than the 4.9 V VCC under-voltage lockout threshold. Otherwise, there may be insufficient VCC voltage to
completely turn on the MOSFET as VCC under-voltage lockout is released during startup. If the buck switch
MOSFET gate drive is not sufficient, the regulator may not start or it may hang up momentarily in a high power
dissipation state. This condition can be avoided by selecting a MOSFET with a lower threshold voltage or if VCC
is supplied from an external source higher than the output voltage. If the minimum input voltage programmed by
the UVLO pin resistor divider is above the VCC regulation level, this precaution is of no concern.
Maximum Duty Cycle
When operating with a high PWM duty cycle, the buck switch will be forced off each cycle for 320 ns to ensure
the boot-strap capacitor is recharged and to allow time to sample and hold the current in the low side MOSFET.
This forced off-time limits the maximum duty cycle of the controller. When designing a regulator with high
switching frequency and high duty cycle requirements, a check should be made of the required maximum duty
cycle (including losses) against the graph shown in Figure 6.
The actual maximum duty cycle will vary with the operating frequency as follows:
DMAX = 1 - fSW x 320 x 10
-9
(6)
Figure 6. Maximum Duty Cycle vs Switching Frequency
Thermal Protection
Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event the maximum junction
temperature is exceeded. When activated, typically at 165°C, the controller is forced into a low power reset state,
disabling the output driver and the VCC bias regulators. This feature is designed to prevent catastrophic failures
from overheating and destroying the device.
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APPLICATION INFORMATION
External Components
The procedure for calculating the external components is illustrated with the following design example. Only the
values for the 5 V output are calculated since the procedure is the same for the 10 V output. The circuit shown in
Figure 15 is configured for the following specifications:
• CH1 output voltage, VOUT1 = 10.0 V
• CH2 output voltage, VOUT2 = 5.0 V
• CH1 maximum load current, IOUT1 = 4 A
• CH2 maximum load current, IOUT2 = 8 A
• Minimum input voltage, VIN(MIN) = 14 V
• Maximum input voltage, VIN(MAX) = 55 V
• Switching frequency, fSW = 230 kHz
Some component values were chosen as a compromise between the 10 V and 5 V outputs to allow identical
components to be used on both outputs. This design can be reconfigured in a dual-channel interleaved
configuration with a single 10 V output which requires identical power channels.
Timing Resistor
RT sets the switching frequency of each regulator channel. Generally, higher frequency applications are smaller
but have higher losses. Operation at 230 kHz was selected for this example as a reasonable compromise
between small size and high efficiency. The value of RT for 230 kHz switching frequency can be calculated as
follows:
RT =
5.2 x 10
fSW
9
- 948 = 21.66 k:
(7)
A standard value or 22.1 kΩ was chosen for RT. The internal oscillator frequency is twice the switching frequency
and is about 460kHz.
Output Inductor
The inductor value is determined based on the operating frequency, load current, ripple current and the input and
output voltages.
IPP
IO
0
T=
1
fSW
Figure 7. Inductor Current
Knowing the switching frequency, maximum ripple current (IPP), maximum input voltage and the nominal output
voltage (VOUT), the inductor value can be calculated:
L=
VOUT
IPP x fSW
§
©
x ¨1 -
VOUT
·
¹
VIN(MAX)¸
(8)
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The maximum ripple current occurs at the maximum input voltage. Typically, IPP is 20% to 40% of the full load
current. When operating in the diode emulation mode configuration, the maximum ripple current should be less
than twice the minimum load current. For full synchronous operation, higher ripple current is acceptable. Higher
ripple current allows for a smaller inductor size, but places more of a burden on the output capacitor to smooth
the ripple current. For this example, a ripple current of 15% of 8 A was chosen as a compromise for the 10 V
output.
L=
§ 5V · = 16.5 PH
5V
x 10.15 x 8A x 230 kHz ¨ 55V ¸
©
¹
(9)
The nearest standard value of 15 μH was chosen for L. Using the value of 15 µH for L, calculate IPP again. This
step is necessary if the chosen value of L differs significantly from the calculated value.
IPP =
IPP =
VOUT
L x fSW
§
©
x ¨1 -
VOUT
·
¹
VIN(MAX)¸
(10)
§ 5V · = 1.32A
5V
x 115 PH x 230 kHz ¨ 55V ¸
©
¹
(11)
Current Sense Resistor
Before determining the value of current sense resistor (RS), it is valuable to understand the K factor, which is the
ramp slope multiple chosen for slope compensation. The K factor can be varied from 1 to 3 in practice and is
defined as:
K=
L
10 x RS x RRAMP x CRAMP
(12)
The performance of the converter will vary depending on the selected K value (See Table 1). For this example,
2.5 was chosen as the K factor to minimize the power loss in sense resistor RS and the cross-talk between
channels. Crosstalk between the two regulators under certain conditions may be observed on the output as
switch jitter.
The maximum output current capability (IOUT(MAX)) should be 20~50% higher than the required output current, (8
A at VOUT2) to account for tolerances and ripple current. For this example, 120% of 8 A was chosen (9.6 A). The
current sense resistor value can be calculated as:
VCS(TH)
RS =
IOUT(MAX) +
VOUT x K
fSW x L
-
IPP
2
(13)
0.12
= 0.0096
RS =
1.32A
5V x 2.5
9.6A +
2
230 kHz x 15 PH
(14)
Where VCS(TH) is the current limit threshold voltage (120 mV). A value of 10 mΩ was chosen for RS. The sense
resistor must be rated to handle the power dissipation at maximum input voltage when current flows through the
free-wheel MOSFET for the majority of the PWM cycle. The maximum power dissipation of RS can be calculated:
§
©
VIN(MAX) ¸
§
©
5V ·
2
x 8 x 0.01 = 0.58W
55V ¸
PRS = ¨1 -
PRS = ¨1 -
VOUT
· I 2R
OUT
S
¹
(15)
¹
(16)
During output short condition, the worst case peak inductor current is limited to:
VCS(TH)
ILIM_PEAK =
18
RS
VIN(MAX)tON(MIN)
+
L
(17)
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ILIM_PEAK =
0.12 55V x 100 ns
+
= 12.37A
0.01:
15 PH
(18)
Where tON(MIN) is the minimum HO on-time which is nominally 100 ns. The chosen inductor must be evaluated for
this condition, especially at elevated temperature where the saturation current rating of the inductor may drop
significantly. At the maximum input voltage with a shorted output, the valley current must fall below VCS(TH) / RS
before the high-side MOSFET is allowed to turn on.
Ramp Resistor And Ramp Capacitor
The value of ramp capacitor (CRAMP) should be less than 2 nF to allow full discharge between cycles by the
discharge switch internal to the LM5119. A good quality, thermally stable ceramic capacitor with 5% or less
tolerance is recommended. For this design the value of CRAMP was set at the standard capacitor value of 820 pF.
With the inductor, sense resistor and the K factor selected, the value of the ramp resistor (RRAMP) can be
calculated as:
RRAMP =
L
10 x RS x K x CRAMP
(19)
15 PH
= 73.2 k:
RRAMP =
10 x 0.01: x 2.5 x 820 pF
(20)
The standard value of 73.2 kΩ was selected.
Output Capacitors
The output capacitors smooth the inductor ripple current and provide a source of charge during transient loading
conditions. For this design example, a 470 µF electrolytic capacitor with 10 mΩ ESR was selected as the main
output capacitor. The fundamental component of the output ripple voltage is approximated as:
'VOUT = IPP x
2
ESR +
'VOUT = 1.32A x
1
§
·
¨8 x ¶´SW x COUT¸
©
¹
2
2
(21)
1
§
·
8 x 230 kHz x 470 PF¸
©
¹
2
0.01: + ¨
(22)
üVOUT = 13.3mV
(23)
Two 22 µF low ERS / ESL ceramic capacitors are placed in parallel with the 470 µF electrolytic capacitor, to
further reduce the output voltage ripple and spikes.
Table 1. Performance Variation by K Factor
K<1
1 <— K —> 3
Cross Talk
Higher
Lower
Peak Inductor Current with Short Output
Condition
Lower
Higher
Smaller
Larger
Inductor Size
Sub-harmonic
oscillation may occur
Power Dissipation of Rs
Higher
Lower
Efficiency
Lower
Higher
K>3
Introduces additional
pole near cross-over
frequency
Input Capacitors
The regulator input supply voltage typically has high source impedance at the switching frequency. Good quality
input capacitors are necessary to limit the ripple voltage at the VIN pin while supplying most of the switch current
during the on-time. When the buck switch turns on, the current into the buck switch steps to the valley of the
inductor current waveform, ramps up to the peak value, and then drops to the zero at turn-off. The input
capacitance should be selected for RMS current rating and minimum ripple voltage. A good approximation for the
required ripple current rating necessary is IRMS > IOUT / 2. Seven 2.2 μF ceramic capacitors were used for each
channel. With ceramic capacitors, the input ripple voltage will be triangular. The input ripple voltage with one
channel operating is approximately:
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IOUT
'VIN =
'VIN =
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´ SW x CIN
4x¶
(24)
8A
= 0.565V
4 x 230 kHz x 15.4 PF
(25)
The ripple voltage of the input capacitors will be reduced significantly with dual channel operation since each
channel operates 180 degrees out of phase from the other. Capacitors connected in parallel should be evaluated
for RMS current rating. The current will split between the input capacitors based on the relative impedance of the
capacitors at the switching frequency.
When the converter is connected to an input power source, a resonant circuit is formed by the line inductance
and the input capacitors. To minimize overshoot make CIN > 10 x LIN. The characteristic source impedance (ZS)
and resonant frequency (fS) are:
LIN
ZS =
fS =
CIN
(26)
1
LIN x CIN
2S
(27)
Where LIN is the inductance of the input wire. The converter exhibits negative input impedance which is lowest at
the minimum input voltage:
ZIN =
VIN
2
POUT
(28)
The damping factor for the input filter is given by:
G=
1 § RIN + ESR ZS ·
+
x
2 ¨
ZS
ZIN ¸
©
¹
(29)
Where RIN is the input wiring resistance and ESR is the equivalent series resistance of the input capacitors.
When δ = 1, the input filter is critically damped. This may be difficult to achieve with practical component values.
With δ < 0.2, the input filter will exhibit significant ringing. If δ is zero or negative, there is not enough resistance
in the circuit and the input filter will sustain an oscillation. When operating near the minimum input voltage, a bulk
aluminum electrolytic capacitor across CIN may be needed to damp the input for a typical bench test setup.
VCC Capacitor
The primary purpose of the VCC capacitor (CVCC) is to supply the peak transient currents of the LO driver and
bootstrap diode as well as provide stability for the VCC regulator. These peak currents can be several amperes.
The recommended value of CVCC should be no smaller than 0.47 µF, and should be a good quality, low ESR,
ceramic capacitor located at the pins of the IC to minimize potentially damaging voltage transients caused by
trace inductance. A value of 1 μF was selected for this design.
Bootstrap Capacitor
The bootstrap capacitor between the HB and SW pins supplies the gate current to charge the high-side MOSFET
gate at each cycle’s turn-on and recovery charge for the bootstrap diode. These current peaks can be several
amperes. The recommended value of the bootstrap capacitor is at least 0.1 μF, and should be a good quality,
low ESR, ceramic capacitor located at the pins of the IC to minimize potentially damaging voltage transients
caused by trace inductance. The absolute minimum value for the bootstrap capacitor is calculated as:
CHB t
Qg
'VHB
(30)
Qg is the high-side MOSFET gate charge and ΔVHB is the tolerable voltage droop on CHB, which is typically less
than 5% of VCC. A value of 0.47 μF was selected for this design.
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Soft Start Capacitor
The capacitor at the SS pin (CSS) determines the soft-start time (tSS), which is the time for the output voltage to
reach the final regulated value. The value of CSS for a given time is determined from:
CSS =
tSS x 10 PA
0.8V
(31)
For this application, a value of 0.047 μF was chosen for a soft-start time of 3.8 ms.
Restart Capacitor
The restart pin sources 10 µA into the external restart capacitor (CRES). The value of the restart capacitor is given
by:
CRES =
10 PA x tRES
1.25V
(32)
Where tRES is the time the LM5119 remains off before a restart attempt in hiccup mode current limiting. For this
application, a value of 0.47 µF was chosen for a restart time of 59 ms.
Output Voltage Divider
RFB1 and RFB2 set the output voltage level, the ratio of these resistors is calculated from:
RFB2
RFB1
=
VOUT
0.8V
-1
(33)
1.33 kΩ was chosen for RFB1 in this design which results in a RFB2 value of 6.98 kΩ for VOUT2 of 5 V. A
reasonable guide is to select the value of RFB1 in the range between 500 Ω and 10 kΩ. The value of RFB1 should
be large enough to keep the total divider power dissipation small.
VOUT
LM5119
0.8V
RFB2
FB
+
COMP
RCOMP
CCOMP
RFB1
CHF
Figure 8. Feedback Configuration
UVLO Divider
The UVLO threshold is internally set to 1.25 V at the UVLO pin. The LM5119 is enabled when the system input
voltage VIN causes the UVLO pin to exceed the threshold voltage of 1.25 V. When the UVLO pin voltage is
below the threshold, the internal 20 μA current source is disabled. When the UVLO pin voltage exceeds the 1.25
V threshold, the 20 μA current source is enabled causing the UVLO pin voltage to increase, providing hysteresis.
The values of RUV1 and RUV2 can be determined from the following equation:
RUV2 =
RUV1 =
VHYS
20 PA
(34)
1.25V x RUV2
VIN - 1.25
(35)
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VHYS is the desired UVLO hysteresis at VIN, and VIN in the second equation is the desired UVLO release (turnon) voltage. For example, if it is desired for the LM5119 to be enabled when VIN reaches 13.5 V, and the desired
hysteresis is 1.2 V, then RUV2 should be set to 60 kΩ and RUV1 should be set to 6.12 kΩ. For this application
RUV2 was selected to be 60.4 kΩ, RUV1was selected to be 6.19 kΩ. The LM5119 can be remotely shutdown by
taking the UVLO pin below 0.4 V with an external open collector or open drain device. The outputs and the VCC
regulator are disabled in shutdown mode. Capacitor CFT provides filtering for the divider. A value of 100 pF was
chosen for CFT. The voltage at the UVLO pin should never exceed 15 V when using the external set-point
divider. It may be necessary to clamp the UVLO pin at high input voltages.
VIN
LM5119
20 PA
RUV2
UVLO
STANDBY
+
1.25V
RUV1
CFT
+
-
0.4V
SHUTDOWN
Figure 9. UVLO Configuration
Mosfet Selection
Selection of the power MOSFETs is governed by the same tradeoffs as switching frequency. Breaking down the
losses in the high-side and low-side MOSFETs is one way to compare the relative efficiencies of different
devices. When using discrete SO-8 MOSFETs, generally the output current capability range is 2 A to 10 A.
Losses in the power MOSFETs can be broken down into conduction loss, gate charging loss, and switching loss.
Conduction loss PDC is approximately:
PDC (HO-MOSFET) = D x (IO2 x RDS(ON) x 1.3)
(36)
PDC (LO-MOSFET) = (1 ± D) x (IO2 x RDS(ON) x 1.3)
(37)
Where, D is the duty cycle and the factor of 1.3 accounts for the increase in MOSFET on-resistance due to
heating. Alternatively, the factor of 1.3 can be eliminated and the high temperature on-resistance of the MOSFET
can be estimated using the RDS(ON) vs Temperature curves in the MOSFET datasheet. Gate charging loss, PGC,
results from the current driving the gate capacitance of the power MOSFETs and is approximated as:
PGC = n x VCC x Qg x fSW
(38)
Where Qg refers to the total gate charge of an individual MOSFET, and ‘n’ is the number of MOSFETs. Gate
charge loss differs from conduction and switching losses in that the actual dissipation occurs in the LM5119 and
not in the MOSFET itself. Further loss in the LM5119 is incurred if the gate driving current is supplied by the
internal linear regulator. In this example, VCC is supplied from the 10 V output through a diode to minimize the
loss of the internal linear regulator.
Switching loss occurs during the brief transition period as the MOSFET turns on and off. During the transition
period both current and voltage are present in the channel of the MOSFET. The switching loss can be
approximated as:
PSW = 0.5 x VIN x IO x (tR + tF) x fSW
(39)
Where tR and tF are the rise and fall times of the MOSFET. The rise and fall times are usually mentioned in the
MOSFET datasheet or can be empirically observed with an oscilloscope. Switching loss is calculated for the
high-side MOSFET only. Switching loss in the low-side MOSFET is negligible because the body diode of the lowside MOSFET turns on before the MOSFET itself, minimizing the voltage from drain to source before turn-on. For
this example, the maximum drain-to-source voltage applied to either MOSFET is 55 V.The selected MOSFETs
must be able to withstand 55 V plus any ringing from drain to source, and be able to handle at least the VCC
voltage plus any ringing from gate to source. A good choice of MOSFET for the 55 V input design example is the
PSMN5R5. It has an RDS(ON) of 5.2 mΩ and total gate charge of 56 nC. In applications where a high step-down
ratio is maintained in normal operation, efficiency may be optimized by choosing a high-side MOSFET with lower
Qg, and low-side MOSFET with lower RDS(ON).
22
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Mosfet Snubber
A resistor-capacitor snubber network across the low-side MOSFET reduces ringing and spikes at the switching
node. Excessive ringing and spikes can cause erratic operation and couple noise to the output. Selecting the
values for the snubber is best accomplished through empirical methods. First, make sure the lead lengths for the
snubber connections are very short. Start with a resistor value between 5 and 50 Ω. Increasing the value of the
snubber capacitor results in more damping, but higher snubber losses. Select a minimum value for the snubber
capacitor that provides adequate damping of the spikes on the switch waveform at high load. A snubber may not
be necessary with an optimized layout.
Error Amplifier Compensation
RCOMP, CCOMP and CHF configure the error amplifier gain characteristics to accomplish a stable voltage loop gain.
One advantage of current mode control is the ability to close the loop with only two feedback components, RCOMP
and CCOMP. The voltage loop gain is the product of the modulator gain and the error amplifier gain. For the 5 V
output design example, the modulator is treated as an ideal voltage-to-current converter. The DC modulator gain
of the LM5119 can be modeled as:
DC_GAIN(MOD) =
RLOAD
(A x RS)
(40)
Note that A is the gain of the current sense amplifier which is 10 in the LM5119. The dominant low frequency
pole of the modulator is determined by the load resistance (RLOAD) and output capacitance (COUT). The corner
frequency of this pole is:
fP(MOD) =
1
(2S x RLOAD x COUT)
(41)
For RLOAD = 5 V / 8 A = 0.625 Ω and COUT = 514 μF (effective) then fP(MOD) = 496 Hz
DC Gain(MOD) = 0.625 Ω / (10 x 10 mΩ) = 6.25 = 15.9 dB
For the 5.0 V design example, the modulator gain vs. frequency characteristic is shown in Figure 10.
Figure 10. Modulator Gain and Phase
Components RCOMP and CCOMP configure the error amplifier as a Type II configuration. The DC gain of the
amplifier is 80 dB with a pole at 0 Hz and a zero at fZEA = 1 / (2 π x RCOMP x CCOMP). The error amplifier zero
cancels the modulator pole leaving a single pole response at the crossover frequency of the voltage loop. A
single pole response at the crossover frequency yields a very stable loop with 90 degrees of phase margin. For
the design example, a conservative target loop bandwidth (crossover frequency) of 11 kHz was selected. The
compensation network zero (fZEA) should be selected at least an order of magnitude less than the target
crossover frequency. This constrains the product of RCOMP and CCOMP for a desired compensation network zero 1
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/ (2 π x RCOMP x CCOMP) to be about 1.1 kHz. Increasing RCOMP, while proportionally decreasing CCOMP, increases
the error amp gain. Conversely, decreasing RCOMP while proportionally increasing CCOMP, decreases the error
amp gain. For the design example CCOMP was selected as 6800 pF and RCOMP was selected as 36.5 kΩ. These
values configure the compensation network zero at 640 Hz. The error amp gain at frequencies greater than fZEA
is: RCOMP / RFB2, which is approximately 5.22 (14.3 dB).
Figure 11. Error Amplifier Gain and Phase
The overall voltage loop gain can be predicted as the sum (in dB) of the modulator gain and the error amp gain.
Figure 12. Overall Voltage Loop Gain and Phase
If a network analyzer is available, the modulator gain can be measured and the error amplifier gain can be
configured for the desired loop transfer function. If the K factor is between 2 and 3, the stability should be
checked with the network analyzer. If a network analyzer is not available, the error amplifier compensation
components can be designed with the guidelines given. Step load transient tests can be performed to verify
acceptable performance. The step load goal is minimum overshoot with a damped response. CHF can be added
to the compensation network to decrease noise susceptibility of the error amplifier. The value of CHF must be
sufficiently small since the addition of this capacitor adds a pole in the error amplifier transfer function. This pole
must be well beyond the loop crossover frequency. A good approximation of the location of the pole added by
CHF is: fP2 = fZEA x CCOMP / CHF. The value of CHF was selected as 100 pF for the design example.
Miscellaneous Functions
EN2 is left floating which allows channel2 to always remain enabled. If EN2 is pulled below 2 V, channel2 is
disabled.
The DEMB pin is left floating since this design uses diode emulation. For fully synchronous (continuous
conduction) operation, connect the DEMB to a voltage greater than 2.6 V.
VCCDIS is left floating to enable the internal VCC regulators. To disable the internal VCC regulators, connect this
pin to a voltage greater than 1.25 V.
24
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INTERLEAVED OPERATION
Interleaved operation can offer many advantages in single output, high current applications. The output power
path is split between two identical channels reducing the current in each channel by one-half. Ripple current
reduction in the output capacitors is reduced significantly since each channel operates 180 degrees out of phase
from the other. Ripple reduction is greatest at 50% duty cycle and decreases as the duty cycle varies away from
50%.
Refer to Figure 13 to estimate the ripple current reduction. Also, the effective ripple in the input and output
capacitors occurs at twice the frequency of a single channel design due to the combining of the two channels. All
of these factors are advantageous in managing the higher currents and their effects in a high power design.
Figure 13. Cancellation Factor vs. Duty Cycle for Output Capacitor
To begin an interleaved design, use the previous equations in this datasheet to first calculate the required value
of components using one-half the current in the output power path. The Attenuation Factor in Figure 13 is the
ratio of the output capacitor ripple to the inductor ripple vs. duty cycle. The inductor ripple used in this calculation
is the ripple in either inductor in a two phase design, not the ripple calculated for a single phase design of the
same output power. It can be observed that operation around 50% duty cycle results in almost complete ripple
attenuation in the output capacitor. Figure 13 can be used to calculate the amount of ripple attenuation in the
output capacitors.
Figure 14. Normalized Input Capacitor RMS Ripple Current vs. Duty Cycle
Figure 14 illustrates the ripple current reduction in the input capacitors due to interleaving. As with the output
capacitors, there is near perfect ripple reduction near 50% duty cycle. This plot can be used to calculate the
ripple in the input capacitors at any duty cycle. In designs with large duty cycle swings, use the worst case ripple
reduction for the design.
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To configure the LM5119 for interleaved operation, connect COMP1 and COMP2 pins together at the IC.
Connecting the FB2 pin to VCC2 pin will disable the channel2 error amplifier with a high output impedance at
COMP2. Connect the compensation network between FB1 and the common COMP pins. Connect the two power
stages together at the output capacitors. Finally use the plots in Figure 13 and Figure 14 along with the duty
cycle range to determine the amount of output and input capacitor ripple reduction. Frequently more capacitance
than necessary is used in a design just to meet ESR requirements. Reducing the capacitance based solely on
ripple reduction graphs alone may violate this requirement.
In the LM5119 evaluation board (schematic shown in Figure 15) interleaved operation can be enabled by
shorting both outputs together (with identical components in the power train), and using zero ohm resistors for
R22 and R21. This shorts VCC2 to FB2 and COMP2 to COMP1 respectively. Also the channel2 feedback
network C14, R6, and C15 should be removed. The easy re-configuration between two channel and single
channel operation will allow insight into the benefits of interleaved operation.
Figure 15. 10V 4A, 5V 8A Typical Application Schematic
26
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PCB BOARD LAYOUT RECOMMENDATIONS
The LM5119 consists of two integrated regulators operating almost independently. Crosstalk between the two
regulators under certain conditions may be observed as switch jitter. This effect is common for any dual channel
regulator. Cross-talk effects are usually most severe when one channel is operating around 50% duty cycle.
Careful layout practices help to minimize this effect. The following board layout guidelines apply specifically to
the LM5119 and should be followed for best performance.
1. Keep the Loop1 and Loop2, shown in Figure 16, as small as possible
2. Keep the signal and power grounds separate
3. Place VCC capacitors (C6, C7) and VIN capacitor (C9) as closes as possible to the LM5119
4. Route CS and CSG traces together with Kelvin connection to the sense resistor
5. Connect AGND and PGND directly to the underside exposed pad
6. Ensure there are no high current paths beneath the underside exposed pad
Switching Jitter Root Causes and Solutions
1. Noise coupling of the high frequency switching between two channels through the input power rail
(a) Keep the high current path as short as possible
(b) Choose a FET with minimum lead inductance
(c) Place local bypass capacitors (CIN1, CIN2) as close as possible to the high-side FETs to isolate one
channel from the high frequency noise of the other channel
(d) Slow down the SW switching speed by increasing gate resistors R29 and R30
(e) Minimize the effective ESR/ESL of the input capacitor by paralleling input capacitors
2. High frequency AC noise on FB, CS, CSG and COMP
(a) Use the star ground PCB layout technique and minimize the length of the high current path
(b) Keep the signal traces away from the SW, HO, HB traces and the inductor
(c) Add an R-C filter between the CS and CSG pins
(d) Place CS filter capacitor (C30, C31) next to the LM5119 and on the same PCB layer as the LM5119
3. Ground offset at the switching frequency
(a) Use the star ground PCB layout technique and minimize the length between the grounds of CIN1and CIN2
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VIN
CIN1
CIN2
Loop1
PGND2
CSG1
CS1
COUT2
CSG2
CS2
EP
VOUT2
PGND1
COUT1
VOUT1
Loop2
AGND
RFB2A
RFB1A
RFB1B RFB2B
The bold lines indicate a solid ground plane. Make the
traces to the widest and the shortest and use the star
ground technique.
These lines indicate the high current paths. Make the
traces as wide and short as possible
These lines indicate the small signal paths. The traces
can be narrow but keep them away from any radiated
noise and away from traces that may couple noise
capacitively
These points require the maximum bypassing of the high
frequency switching noise. Isolate each channel from the
high frequency switching noise of the other channel.
Figure 16. Recommended PCB Layout
28
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Changes from Revision F (February 2013) to Revision G
•
Page
Changed LLP-32 to WQFN-32 ........................................................................................................................................... 11
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29
PACKAGE OPTION ADDENDUM
www.ti.com
30-Jan-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
LM5119PSQ/NOPB
ACTIVE
WQFN
RTV
32
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 125
L5119P
LM5119PSQE/NOPB
ACTIVE
WQFN
RTV
32
250
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 125
L5119P
LM5119PSQX/NOPB
ACTIVE
WQFN
RTV
32
4500
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 125
L5119P
LM5119QPSQ/NOPB
ACTIVE
WQFN
RTV
32
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 125
L5119Q
LM5119QPSQX/NOPB
ACTIVE
WQFN
RTV
32
4500
Green (RoHS
& no Sb/Br)
CU SN
Level-3-260C-168 HR
-40 to 125
L25119Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
30-Jan-2014
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Nov-2014
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
LM5119PSQ/NOPB
WQFN
RTV
32
LM5119PSQE/NOPB
WQFN
RTV
LM5119PSQX/NOPB
WQFN
RTV
LM5119QPSQ/NOPB
WQFN
RTV
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
1000
178.0
12.4
5.3
5.3
1.3
8.0
12.0
Q1
32
250
178.0
12.4
5.3
5.3
1.3
8.0
12.0
Q1
32
4500
330.0
12.4
5.3
5.3
1.3
8.0
12.0
Q1
32
1000
178.0
12.4
5.3
5.3
1.3
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Nov-2014
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM5119PSQ/NOPB
WQFN
RTV
32
1000
213.0
191.0
55.0
LM5119PSQE/NOPB
WQFN
RTV
32
250
213.0
191.0
55.0
LM5119PSQX/NOPB
WQFN
RTV
32
4500
367.0
367.0
35.0
LM5119QPSQ/NOPB
WQFN
RTV
32
1000
213.0
191.0
55.0
Pack Materials-Page 2
MECHANICAL DATA
RTV0032A
SQA32A (Rev B)
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