EPA960CR-CP083 High Efficiency Heterojunction Power FET UPDATED 01/16/2006 FEATURES G1dB PAE ● P1dB All Dimensions in mil Tolerance: ± 3 mil Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL EPA • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +38 dBm OUTPUT POWER AT 1dB COMPRESSION 16.5 dB GAIN AT 2 GHz 0.4x9600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 960CR • PARAMETER/TEST CONDITIONS Output Power at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Gain at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Power Added Efficiency at 1dB Compression Vds = 8 V, Ids=50% Idss f= 2.0 GHz 4.0 GHz 2.0 GHz 4.0 GHz MIN TYP 36.5 38.0 38.0 16.5 11.5 15.0 MAX UNITS dBm dB 45 2.0 GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 1760 2880 GM Transconductance VDS = 3 V, VGS = 0 V 1920 3120 VP Pinch-off Voltage VDS = 3 V, IDS = 28 mA -1.0 % 3760 mA mS -2.5 V BVGD Drain Breakdown Voltage IGD = 9.6 mA -11 -15 V BVGS Source Breakdown Voltage IGS = 9.6 mA -7 -14 V RTH* Thermal Resistance o 6* C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 12V -8V 86.4 mA 14.4 mA 36 dBm 175oC -65/175oC 25 W 8V -3V 28.8 mA 4.8 mA @ 3dB Compression 175oC -65/175oC 25 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised January 2006 EPA960CR-CP083 High Efficiency Heterojunction Power FET UPDATED 01/16/2006 FREQ --- S11 --- (GHz) MAG ANG 0.5 0.969 1.0 S-PARAMETERS 8V, 1/2 Idss --- S21 ----- S12 --- --- S22 --- MAG ANG MAG ANG MAG ANG -167.6 8.140 88.4 0.008 24.0 0.814 178.7 0.978 178.4 4.058 73.8 0.011 32.3 0.784 175.2 1.5 0.935 167.8 3.512 66.1 0.016 38.4 0.741 169.4 2.0 0.929 161.0 2.695 57.2 0.021 38.2 0.741 165.6 2.5 0.922 155.5 2.253 49.3 0.025 38.3 0.727 163.4 3.0 0.918 149.8 2.032 40.2 0.030 36.2 0.705 159.7 3.5 0.908 142.2 1.891 30.6 0.037 32.0 0.685 154.5 4.0 0.891 132.4 1.814 19.2 0.045 23.2 0.659 147.7 4.5 0.879 119.7 1.753 5.8 0.052 14.6 0.634 139.9 5.0 0.868 105.9 1.673 -8.2 0.060 5.2 0.623 130.9 5.5 0.859 91.7 1.585 -22.2 0.068 -5.6 0.617 121.2 6.0 0.850 78.2 1.501 -35.7 0.076 -16.6 0.608 112.0 6.5 0.843 64.9 1.461 -46.5 0.084 -23.6 0.565 109.2 7.0 0.825 51.6 1.475 -61.0 0.098 -34.6 0.553 98.3 7.5 0.815 33.9 1.490 -78.4 0.112 -49.5 0.540 81.4 8.0 0.821 12.7 1.415 -98.4 0.119 -66.6 0.521 61.3 8.5 0.850 -6.9 1.253 -116.7 0.120 -82.4 0.546 39.2 9.0 0.877 -22.5 1.087 -133.1 0.114 -98.7 0.593 20.5 9.5 0.892 -33.5 0.928 -145.9 0.108 -110.8 0.609 8.8 10.0 0.902 -43.6 0.852 -153.8 0.111 -118.9 0.665 4.5 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised January 2006