SemiHow HRLP150N10K Originative new design Datasheet

BVDSS = 100 V
RDS(on) typ = 13 Pȍ
HRLP150N10K
ID = 70 A
100V N-Channel Trench MOSFET
TO-220
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Excellent Switching Characteristics
1
2
3
1.Gate 2. Drain 3. Source
‰ Unrivalled Gate Charge : 80 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 13 Pȍ (Typ.) @VGS=10V
‰ Lower RDS(ON) : 14 Pȍ (Typ.) @VGS=4.5V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
100
V
Drain Current
– Continuous (TC = 25୅)
70
A
Drain Current
– Continuous (TC = 100୅)
49
A
IDM
Drain Current
– Pulsed
245
A
VGS
Gate-Source Voltage
ρ25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
190
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
13.6
mJ
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
136
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
ID
(Note 1)
0.9
W/୅
-55 to +175
୅
300
୅
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case
RșCS
Case-to-Sink
RșJA
Junction-to-Ambient
Typ.
Max.
--
1.1
0.5
--
--
62.5
Units
୅/W
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HRLP150N10K
Mar 2016
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
1.0
--
2.4
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 20 A
--
13
15
mŸ
VGS = 4.5 V, ID = 15 A
--
14
20
mŸ
Forward Transconductance
VDS = 5, ID = 20 A
--
50
--
S
VGS = 0 V, ID = 250 Ꮃ
100
--
--
V
VDS = 80 V, VGS = 0 V
--
--
1
Ꮃ
VDS = 80 V, TJ = 125୅
--
--
100
Ꮃ
VGS = ρ20 V, VDS = 0 V
--
--
ρ100
Ꮂ
--
4000
--
Ꮔ
--
290
--
Ꮔ
--
150
--
Ꮔ
--
1.2
--
Ÿ
--
30
--
Ꭸ
--
30
--
Ꭸ
--
180
--
Ꭸ
--
25
--
Ꭸ
--
80
--
nC
--
10
--
nC
--
15
--
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 50 V, ID = 30 A,
RG = 6 Ÿ
VDS = 80 V, ID = 30 A,
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
70
ISM
Pulsed Source-Drain Diode Forward Current
--
--
245
VSD
Source-Drain Diode Forward Voltage
IS = 30 A, VGS = 0 V
--
--
1.3
V
trr
Reverse Recovery Time
--
50
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 30 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
80
--
nC
A
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=17A, VDD=25V, RG=25:, Starting TJ =25qC
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͝;ΒΣ͑ͣͧ͑͢͡
HRLP150N10K
Electrical Characteristics TJ=25 qC
HRLP150N10K
Typical Characteristics
200
TJ=25oC
VGS
Top :
10 V
8V
7V
6V
5V
4V
3.5 V
3.0 V
Bottom : 2.5 V
150
100
ID, Drain Current [A]
ID, Drain Current [A]
200
50
0
150
100
50
* Notes :
1. 300us Pulse Test
2. TC = 25oC
0
2
4
6
* Notes :
1. VDS= 5V
2. 300us Pulse Test
8
0
10
0
1
2
3
4
5
6
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
RDS(ON) [m:],
Drain-Source On-Resistance
24
VGS = 4.5V
22
VGS = 10V
20
18
16
14
12
IDR, Reverse Drain Current [A]
26
100
10
175oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
Note : TJ = 25oC
10
0
40
80
120
1
0.0
160
0.4
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
3000
* Note ;
1. VGS = 0 V
2. f = 1 MHz
2000
Coss
1000
Crss
0
10-1
1.6
12
VGS, Gate-Source Voltage [V]
5000
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
6000
0.8
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitances [pF]
25oC
10
8
6
4
2
0
100
101
VDS = 80V
ID = 30V
0
15
30
45
60
75
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
90
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͝;ΒΣ͑ͣͧ͑͢͡
(continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HRLP150N10K
Typical Characteristics
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250PA
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
0.5
Note :
1. VGS = 10 V
2. ID = 30 A
0.0
-100
200
-50
100
150
200
70
Operation in This Area
is Limited by R DS(on)
60
100 Ps
102
101
ID, Drain Current [A]
1 ms
10 ms
DC
100
* Notes :
1. TC = 25 oC
10-1
10-2
10-1
100
50
40
30
20
10
2. TJ = 175 oC
3. Single Pulse
101
0
25
102
50
75
100
125
150
175
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
ZTJC(t), Thermal Response
ID, Drain Current [A]
50
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
103
0
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
D=0.5
* Notes :
1. ZTJC(t) = 1.1 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.2
10-1
0.1
0.05
PDM
0.02
0.01
10-2
10-5
t1
single pulse
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
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HRLP150N10K
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
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HRLP150N10K
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
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HRLP150N10K
Package Dimension
{vTYYWG
0
4.50±0.20
1.30±0.20
6.50±0.20
ij
.2
9.19±0.20
2.80±0.20
1.27±0.20
1.52±0.20
±0
2.40±0.20
3.02±0.20
13.08±0.20
15.70±0.20
9.90±0.20
0.80±0.20
2.54typ
2.54typ
0.50±0.20
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