RoHS BZM55C2V0-BZM55C75 D T ,. L Zener diode Features 1. Saving space 2. Fits onto SOD 323/SOT 23 footprints 3. Micro Melf package Applications IC Voltage stabilization Construction Silicon epitaxial planar R T Absolute Maximum Ratings Tj=25℃ Parameter O Test Conditions C E L Power dissipation Z-current Junction temperature N Type RthJA≦300K/W Storage temperature range E C O Symbol Value Unit PV 500 mW IZ PV/VZ mA Tj 175 ℃ Tstg -65~+175 ℃ Maximum Thermal Resistance J E Tj=25℃ Parameter Junction ambient W Test Conditions Symbol Value Unit on PC board 50mm×50mm×1.6mm RthJA 500 K/W Electrical Characteristics Tj=25℃ Parameter Forward voltage Test Conditions Type IF=200mA WEJ ELECTRONIC CO. Symbol VF Http:// www.wej.cn Min Typ Max Unit 1.5 V E-mail:[email protected] RoHS BZM55C2V0-BZM55C75 Type BZM55C. 2V0 2V2 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 VZnom V 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 J E IZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 for VZT and 1) V 1.9~2.1 2.09~2.31 2.28~2.56 2.5~2.9 2.8~3.2 3.1~3.5 3.4~3.8 3.7~4.1 4.0~4.6 4.4~5.0 4.8~5.4 5.2~6.0 5.8~6.6 6.4~7.2 7.0~7.9 7.7~8.7 8.5~9.6 9.4~10.6 10.4~11.6 11.4~12.7 12.4~14.1 13.8~15.6 15.3~17.1 16.8~19.1 18.8~21.2 20.8~23.3 22.8~25.6 25.1~28.9 28~32 31~35 34~38 37~41 40~46 44~50 48~54 52~60 58~66 64~72 70~79 rzjT Ω 100 100 <85 <85 <85 <85 <85 <85 <75 <60 <35 <25 <10 <8 <7 <7 <10 <15 <20 <20 <26 <30 <40 <50 <55 <55 <80 <80 <80 <80 <80 <90 <90 <110 <125 <135 <150 <200 <250 R T C E L E rzjK at Ω <600 <600 <600 <600 <600 <600 <600 <600 <600 <600 <550 <450 <200 <150 <50 <50 <50 <70 <70 <90 <110 <110 <170 <170 <220 <220 <220 <220 <220 <220 <220 <500 <600 <700 <700 <1000 <1000 <1000 <1500 IZK mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 O IR and IR at 2) μA μA <150 <300 <150 <300 <50 <100 <10 <50 <4 <40 <2 <40 <2 <40 <2 <40 <1 <20 <0.5 <10 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <2 <0.1 <5 <0.1 <5 <0.1 <5 <0.1 <10 <0.1 <10 <0.1 <10 <0.1 <10 <0.1 <10 N IC VR V 1 1 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 C D T ,. L TKVZ %/K -0.09~-0.06 -0.09~-0.06 -0.09~-0.06 -0.09~-0.06 -0.08~-0.05 -0.08~-0.05 -0.08~-0.05 -0.08~-0.05 -0.06~-0.03 -0.05~+0.02 -0.02~+0.02 -0.05~+0.05 0.03~0.06 0.03~0.07 0.03~0.07 0.03~0.08 0.03~0.09 0.03~0.1 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.03~0.11 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 0.04~0.12 O W 1) BZM55B… ±2% of Vznom BZM55C… ±5% of VZnom 2) at Tj=150℃ WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS BZM55C2V0-BZM55C75 D T ,. L Characteristics (Tj=25℃ unless otherwise specified) Figure 1. Total Power Dissipation vs. Ambient Temperature R T C E L Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25℃ J E W IC C O Figure 4. Typical Change of Working Voltage Vs. Junction Temperature O N Figure 5. Temperature Coefficient of Vz vs. Z-Voltage E Figure 3. Diode Capacitance vs. Z-voltage WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS BZM55C2V0-BZM55C75 Figure 6. Forward Current vs. Forward Voltage J E R T C E L Figure 7. Z-Current vs. Z-Voltage C D T ,. L O Figure 8. Z-Current vs. Z-Voltage O IC N Figure 9. Differential Z-Resistance Vz vs. Z-Voltage E W WEJ ELECTRONIC CO. Figure 10. Thermal Response Http:// www.wej.cn E-mail:[email protected] RoHS BZM55C2V0-BZM55C75 D T ,. L Dimensions in mm Cathode identification 1.35 Φ1.25 - 0.05 Glass R≥2.5 IC Glass 1.9±0.1 Glass Case Micro Melf J E R T O C O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]