Isahaya INC6006AS1 For low frequency amplify application silicon npn epitaxial type Datasheet

<SMALL-SIGNAL TRANSISTOR>
INC6006AS1
PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
INC6006AS1 is a silicon NPN transistor.
UNIT:mm
4.0
3.0
7.5MAX
It is designed with high voltage.
FEATURE
0.1
14.0
・Low voltage VCE(sat) = 0.2V(MAX)
・Complementary : INA6006AS1
1.0
・High voltage VCEO = 160V
13.0MIN
1.0
・Small package for easy mounting.
0.45
2.5
2.5
0.4
APPLICATION
2.5
High voltage switching.
①
②
③
TERMINAL CONNECTOR
①:EMITTER
JEITA:-
②:COLLECTOR
JEDEC:-
③:BASE
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
RATING
UNIT
180
V
6
V
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
160
V
I
CM
Peak collector current
200
mA
I
C
Collector current
100
mA
PC
Collector dissipation(Ta=25℃)
600
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
MARKING
Type Name
C06
□□W
hFE ITEM
LOT No
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
LIMITS
TYP
MAX
UNIT
V(BR)CBO
C to B break down voltage
I C=100μA,I E=0A
180
-
-
V
V(BR)EBO
E to B break down voltage
I E=10μA,I C=0A
6
-
-
V
V(BR)CEO
C to E break down voltage
I C=1mA,RBE=∞
160
-
-
V
ICBO
Collector cut off current
VCB=120V,I E =0A
-
-
100
nA
IEBO
Emitter cut off current
VEB=4V,I C=0A
-
-
100
nA
hFE1
DC forward current gain1
VCE=5V,I C=1mA
72
-
-
-
hFE2
DC forward current gain2
VCE=5V,I C=10mA
72
-
330
-
hFE3
DC forward current gain3
VCE=5V,I C=50mA
27
-
-
-
VCE(sat)1
C to E saturation voltage1
I C=10mA,I B=1mA
-
-
0.15
V
VCE(sat)2
C to E saturation voltage2
I C=50mA,I B=5mA
-
-
0.2
V
VBE(sat)1
B to E saturation voltage1
I C=10mA,I B=1mA
-
-
1.0
V
VBE(sat)2
B to E saturation voltage2
I C=50mA,I B=5mA
-
-
1.0
V
fT
Gain bandwidth product
VCE=10V,I E=-10mA
100
-
300
MHz
Cob
Collector output capacitance
VCB=10V,I E=0A,f=1MHz
-
1.7
6
pF
Cib
Collector input capacitance
VEB=0.5V,I c=0A,f=1MHz
-
-
20
pF
ISAHAYA ELECTRONICS CORPORATION
<SMALL-SIGNAL TRANSISTOR>
INC6006AS1
PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICIAL CHARACTERISTICS
DC forward current gain VS. Collector current
COLLECTOR DISSIPATION
VS AMBIENT TEMPERATURE
800
1000
DC forward current gain hFE
COLLECTOR DISSIPATION Pc (mW)
VCE=5V
700
600
500
400
300
200
85℃
25℃
100
-40℃
100
10
0.01
0
0
50
100
0.1
150
Collector current IC(mA)
VCE=5V
10
85℃
1
-40℃
0.1
0.01
1
1.5
COLLECTOR TO EMITTERSATURATION VOLTAGE
VCE(sat) (V)
100
0.5
1
IC/IB=10
0.1
-40℃
0.01
0.01
0.1
1
10
100
COLLECTOR CURRENT IC(mA)
COMMON EMITTER OUTPUT
BASE TO EMITTERSATURATION VOLTAGE
VS. COLLECTOR CURRENT
10
50
25℃
45
IC/IB=10
COLLECTOR CURRENT IC (mA)
COLLECTOR TO EMITTERSATURATION VOLTAGE
VBE(sat) (V)
85℃
25℃
BASE TO EMITTER VOLTAGE VBE (V)
-40℃
25℃
1
40
IB=300uA
35
IB=250uA
30
IB=200uA
25
20
IB=150uA
15
IB=100uA
10
IB=50uA
5
85℃
IB=0uA
0
0.1
0.01
100
COLLECTOR TO EMITTERSATURATION
VOLTAGE VS. COLLECTOR CURRENT
COMMON EMITTER TRANSFER
0
10
Collector current IC(mA)
AMBIENT TEMPERATURE Ta (℃)
25℃
1
0
0.1
1
10
100
5
10
15
COLLECTOR EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC(mA)
ISAHAYA ELECTRONICS CORPORATION
20
<SMALL-SIGNAL TRANSISTOR>
INC6006AS1
PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
1000
GAIN BAND WIDTH PRODUCT fT (MHz)
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
Ta=25℃
VCE=10V
100
10
1
0.1
1
10
100
10
Ta=25℃
f=1MHz
1
0.1
1
EMITTER INPUT CAPACITANCE
VS. BASE TO EMITTER VOLTAGE
EMITTER INTPUT CAPACITANCE Cib (pF)
100
Ta=25℃
f=1MHz
10
1
0.1
1
10
COLLECTOR TO BASE VOLTAGE VCB (V)
EMITTER CURRENT IE (mA)
10
EMITTER TO BASE VOLTAGE VEB (V)
ISAHAYA ELECTRONICS CORPORATION
100
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Mar.2013
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