INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB812，IIRFB812 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.2Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Uninterruptible power supplies ·Motor control applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 3.6 A IDM Drain Current-Single Pulsed 14.4 A PD Total Dissipation @TC=25℃ 78 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 2.5 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB812，IIRFB812 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA 500 VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA 3 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 5 V VGS=10V; ID=2.2A 2.2 Ω Gate-Source Leakage Current VGS= ±20V ±0.1 μA IDSS Drain-Source Leakage Current VDS=500V; VGS= 0V 25 μA VSD Diode forward voltage IS=3.6A; VGS =0V 1.2 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark