IPB05N03LA IPI05N03LA, IPP05N03LA OptiMOS®2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1) • Qualified according to JEDEC for target application V DS 25 V R DS(on),max (SMD version) 4.6 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 • 175 °C operating temperature • dv /dt rated Type Package Ordering Code Marking IPB05N03LA P-TO263-3-2 Q67042-S4141 05N03LA IPI05N03LA P-TO262-3-1 Q67042-S4142 05N03LA IPP05N03LA P-TO220-3-1 Q67042-S4143 05N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 80 T C=100 °C 76 Pulsed drain current I D,pulse T C=25 °C3) 385 Avalanche energy, single pulse E AS I D=72 A, R GS=25 Ω 190 Reverse diode dv /dt dv /dt I D=80 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage4) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) Unit A mJ kV/µs ±20 V 94 W -55 ... 175 °C 55/175/56 J-STD20 and JESD22 Rev. 1.4 page 1 2004-03-23 IPB05N03LA IPI05N03LA, IPP05N03LA Parameter Values Symbol Conditions Unit min. typ. max. - - 1.6 minimal footprint - - 62 6 cm2 cooling area5) - - 40 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 25 - - Gate threshold voltage V GS(th) V DS=V GS, I D=50 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=25 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=25 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=55 A - 6.5 8.1 mΩ V GS=4.5 V, I D=55 A, SMD version - 6.2 7.8 V GS=10 V, I D=55 A - 4.1 4.9 V GS=10 V, I D=55 A, SMD version - 3.8 4.6 - 1 - Ω 43 86 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=55 A 2) Current is limited by bondwire; with an R thJC=1.6 K/W the chip is able to carry 108 A. 3) See figure 3 4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.4 page 2 2004-03-23 IPB05N03LA IPI05N03LA, IPP05N03LA Parameter Values Symbol Conditions Unit min. typ. max. - 2413 3110 - 921 1225 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 112 167 Turn-on delay time t d(on) - 11 17 Rise time tr - 27 38 Turn-off delay time t d(off) - 32 45 Fall time tf - 4.6 6.9 Gate to source charge Q gs - 8.1 11 Gate charge at threshold Q g(th) - 3.9 5.0 Gate to drain charge Q gd - 5.3 8.0 Switching charge Q sw - 10 14 Gate charge total Qg - 19 25 Gate plateau voltage V plateau - 3.4 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 5 V - 17 22 Output charge Q oss V DD=15 V, V GS=0 V - 20 27 - - 80 - - 385 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=20 A, R G=2.7 Ω pF ns Gate Charge Characteristics6) V DD=15 V, I D=40 A, V GS=0 to 5 V nC V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C - 0.97 1.2 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 10 nC 6) T C=25 °C A See figure 16 for gate charge parameter definition Rev. 1.4 page 3 2004-03-23 IPB05N03LA IPI05N03LA, IPP05N03LA 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 100 100 90 80 80 70 60 I D [A] P tot [W] 60 50 40 40 30 20 20 10 0 0 0 50 100 150 0 200 50 100 T C [°C] 150 200 T C [°C] 3 Safe operation area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1000 10 1 µs limited by on-state resistance 10 µs 1 100 0.5 0.2 Z thJC [K/W] 100 µs I D [A] DC 1 ms 0.1 0.1 0.05 0.02 0.01 single pulse 10 ms 10 0.01 1 0.001 0.1 1 10 100 10 0 -5 100-4 100-3 10 -2 0 10-10 10 0 1 t p [s] V DS [V] Rev. 1.4 010-6 page 4 2004-03-23 IPB05N03LA IPI05N03LA, IPP05N03LA 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 25 140 10 V 4.5 V 3.5 V 3.2 V 120 3.8 V 4.1 V 3V 20 R DS(on) [mΩ] 4.1 V 100 I D [A] 80 3.8 V 60 15 10 3.5 V 4.5 V 40 5 3.2 V 20 10 V 3V 2.8 V 0 0 0 1 2 0 3 20 40 V DS [V] 60 80 100 120 140 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 160 120 140 100 120 80 g fs [S] I D [A] 100 80 60 60 40 40 20 20 175 °C 25 °C 0 0 0 1 2 3 4 5 20 40 60 80 I D [A] V GS [V] Rev. 1.4 0 page 5 2004-03-23 IPB05N03LA IPI05N03LA, IPP05N03LA 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=55 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 10 2.5 9 8 2 500 µA 6 98 % V GS(th) [V] R DS(on) [mΩ] 7 5 typ 4 1.5 50 µA 1 3 2 0.5 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. Capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 10000 1000 Ciss 175 °C Coss 25 °C 100 175°C 98% I F [A] C [pF] 1000 Crss 10 100 25°C 98% 1 10 0 5 10 15 20 25 30 V DS [V] Rev. 1.4 0.0 0.5 1.0 1.5 2.0 V SD [V] page 6 2004-03-23 IPB05N03LA IPI05N03LA, IPP05N03LA 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=40 A pulsed parameter: T j(start) parameter: V DD 100 12 25 °C 15 V 100 °C 10 150 °C 5V 20 V V GS [V] I AV [A] 8 10 6 4 2 1 0 1 10 100 1000 0 10 20 30 40 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 29 V GS 28 Qg 27 V BR(DSS) [V] 26 25 24 V g s(th) 23 22 Q g (th) 21 Q sw Q gs 20 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev. 1.4 page 7 2004-03-23 IPB05N03LA IPI05N03LA, IPP05N03LA Package Outline P-TO263-3-2: Outline Footprint Packaging Dimensions in mm Rev. 1.4 page 8 2004-03-23 IPB05N03LA IPI05N03LA, IPP05N03LA P-TO262-3-1: Outline P-TO220-3-1: Outline Packaging Dimensions in mm Rev. 1.4 page 9 2004-03-23 IPB05N03LA IPI05N03LA, IPP05N03LA Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.4 page 10 2004-03-23