HF220-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF220-28 is 28 V epitaxial planar transistor, designed for SSB and VHF communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .500 4L FLG .112x45° L A FEATURES: E FULL R • PG = 12 dB min. at 220 W/30 MHz • IMD3 = -30 dBc max. at 220 W (PEP) • Omnigold™ Metalization System • 30 MHz @ 28 V operations • IMD –30 dBc 16 A VCBO 70 V B VEBO E B E H D G F K I J DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 35 V C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 E 4.0 V MAXIMUM .125 / 3.18 B VCEO Ø.125 NOM. C MAXIMUM RATINGS IC C F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 .003 / 0.08 .007 / 0.18 PDISS 320 W @ TC = 25 °C H I .090 / 2.29 .110 / 2.79 TJ -65 °C to +200 °C J .150 / 3.81 .175 / 4.45 TSTG -65 °C to +150 °C .980 / 24.89 1.050 / 26.67 θJC 0.6 °C/W .280 / 7.11 K CHARACTERISTICS L ORDER CODE: ASI10609 TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 100 mA 70 V BVEBO IE = 20 mA 4.0 V ICEO VCE = 30 V 5.0 mA ICES VCE = 35 V 5.0 mA hFE VCE = 5.0 V 60 --- COB VCB = 28 V --- pF IC = 7.0 A 15 f = 1.0 MHz --- 450 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 ERROR! REFERENCE SOURCE NOT FOUND. HF220-28 CHARACTERISTICS GP TC = 25 °C VCE = 28 V ICQ = 750 mA POUT = 220 W 12 --- IMD3 ηC Load Mismatch F1 = 30.000MHz VCE = 28 V IMPEDANCE DATA FREQ ZIN (Ω Ω) 30 MHz 1.15 + J0.41 f2 = 30.001 MHz ICQ = 750 mA -30 40 POUT = 220 W --- dB dBc % ∞:1 --- VSWR ZCL (Ω Ω) 1.25 + J1.92 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2