Seme LAB BFX29 Pnp silicon epitaxial transistor Datasheet

BFX29
MECHANICAL DATA
Dimensions in mm (inches)
PNP SILICON EPITAXIAL
TRANSISTOR
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
APPLICATIONS
6.10 (0.240)
6.60 (0.260)
• General Purpose Industrial Applications
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
TO39 PACKAGE
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
60V
VCEO
Collector – Emitter Voltage
60V
VEBO
Emitter – Base Voltage
5V
IC
Collector Current Continuous
600mA
ICM
Collector Current Peak
600mA
IEM
Emitter Current Peak
600mA
Ptot
Total Power Dissipation Tamb < 25°C
Tstg
Storage Temperature
Tj
Operating Junction Temperature
600 mW
–65 to 200°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 3083
Issue 2
BFX29
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)
Parameter
IEBO
ICBO
hFE
VCE(sat)
Emitter Cut–off Current
Collector Cut–off Current
DC Current Gain
Collector – Emitter
Saturation Voltage
VBE(sat)
Base – Emitter Saturation Voltage
Ctc
Collector Capactitance
Cte
Emitter Capactitance
fT
Transistion Frequency
Test Conditions
Min.
Typ.
Max.
VEB = 5.0V
IC = 0
30
500
VEB = 3V
IC = 0
1.0
100
VCB =60V
IE = 0
1.0
500
VCB =50V
IE = 0
0.5
50
Tj = 100°C
0.03
2.0
VCE =10V
IC = 0.1mA
20
90
VCE = 10V
IC = 1mA
40
105
VCE = 10V
IC = 10mA
50
125
VCE =10V
IC = 50mA
50
125
VCE = 10V
IC = 150mA
40
90
IC = 150mA
IB = 15mA
0.15
0.40
IC = 30mA
IB = 1.0mA
0.77
0.90
IC = 150mA
IB = 15mA
1.05
1.30
VCB = 10V
IE = Ie =0
6
12
f=1.0MHz
VEB = 2.0V
18
f=1.0MHz
IC = 50mA
f=100MHz
Tamb = 25°C
nA
nA
µA
—
V
V
pF
IC = Ic =0
VCE = 10V
Unit
100
30
MHz
360
THERMAL CHARACTERISTICS
Rθth(j-amb)
Thermal Resistance Junction to Ambient
292
°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 3083
Issue 2
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