Diode Semiconductor Korea FR151---FR157 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A FAST RECOVERY RECTIFIERS FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 DO - 15 MECHANICAL DATA Case:JEDEC DO-15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. FR 151 FR 152 FR 153 FR 154 FR 155 FR 156 FR 157 UNITS Maximum recurrent peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 1.5 A IFSM 60.0 A VF 1.3 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 1.5 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 5.0 IR 150 250 Maximum reverse recovery time (Note1) trr Typical junction capacitance (Note2) CJ 18 Typical thermal resistance (Note3) RθJA 45 TJ - 55---- +150 TSTG - 55---- + 150 Operating junction temperature range Storage temperature range A 100.0 500 ns pF ／Ｗ NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea FR151---FR157 FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 50 N.1. 10 N.1. +0.5A D.U.T. ( - ) 0 PULSE GENERATOR (NOTE2) (+) 50VDC (APPROX) (-) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A 1cm NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O 100 10 TJ=25 Pulse Width=300µS 4 2 1.0 0.4 0.2 0.1 0.06 0.04 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 AVERAGE FORWARD RECTIFIED CURRENT AMPERES INSTANTANEOUS FORWARD CURRENT AMPERES FIG.2 --TYPICAL FORWARD CHARACTERISTIC SET TIMEBASEFOR 50/100 ns /cm FIG.3 -- FORWARD DERATING CURVE 1.50 1.25 1.00 .75 .50 .25 Single Phase Half Wave 60H Z Resistive or Inductive Load 0 25 50 INSTANTANEOUS FORWARD VOLTAGE,VOLTS 40 20 10 4 TJ=25 f=1MHz 2 1 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE,VOLTS 40 100 150 125 175 FIG.5--PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES JUNCTION CAPACITANCE,pF 60 100 AMBIENT TEMPERATURE, FIG.4--TYPICAL JUNCTION CAPACITANCE 100 75 70 60 TJ=125 8 .3 m s S in g le H a lf S in e -W a v e 50 40 30 20 10 0 1 2 4 6 8 10 20 40 60 100 NUMBER OF CYCLES AT 60 Hz www.diode.kr