GBJ8005 THRU GBJ810 GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 8.0 Ampere FEATURES Glass passivated chip junction Reliable low cost construction utilizing molded plastic technique ● Ideal for printed circuit board ● Low reverse leakage current ● Low forward voltage drop ● High surge current capabiliy GBJ ● ● MECHANICAL DATA ● ● ● ● Case:Molded plastic, GBJ Terminals : Terminals: Leads solderable per MIL-STD-202 method 208 guaranteed Epoxy: UL 94V-0 rate flame retardant Mounting Position: Any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Symbols GBJ 8005 GBJ 801 GBJ 802 GBJ 804 GBJ 806 GBJ 808 GBJ 810 Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current with Heatsink at TC = 100 OC I(AV) 10 A Peak Forward Surge Current, 8.3 ms Single Half-Sine -Wave superimposed on rated load (JEDEC Method) IFSM 170 A Maximum Forward Voltage at 4.0 A DC and 25 OC VF 1.1 V Maximum Reverse Current at TA = 25 C at Rated DC Blocking Voltage TA = 125 OC IR 5.0 500 µA CJ 55 RθJC 1.6 TJ,TS -55 to +150 Parameter O Typical Junction Capacitance Typical Thermal Resistance 1) 2) Operating and Storage Temperature Range 1) 2) Measured at 1 MHz and applied reverse voltage of 4 VDC. Thermal resistance from junction to case with device mounted on 300 mm X 300 mm X 1.6 mm Cu plate heatsink. pF C/W O C O GBJ8005 THRU GBJ810 RATINGS AND CHARACTERISTIC CURVES 8 With heatsink 6 4 Without heatsink 2 Resistive or Inductive load 0 25 50 10 IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 10 75 100 125 1.0 0.1 Tj = 25° C Pulse width = 300µs 0.01 150 Cj, JUNCTION CAPACITANCE (pF) 160 Tj = 150° C 120 80 40 0 0.4 0.8 100 Single half-sine-wave (JEDEC method) 1.2 1.6 1.8 Tj = 25° C f = 1MHz 10 1 1 1 100 10 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (µA) IFSM, PEAK FWD SURGE CURRENT (A) 180 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics (per element) TC, CASE TEMPERATURE (° C) Fig. 1 Forward Current Derating Curve 1000 100 Tj = 125° C Tj = 100° C 10 Tj = 50° C 1.0 Tj = 25° C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics 100