AP09T10GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
BVDSS
100V
RDS(ON)
300mΩ
ID
G
4.4A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
4.4
A
ID@TC=100℃
Drain Current, VGS @ 10V
2.8
A
1
IDM
Pulsed Drain Current
12
A
PD@TC=25℃
Total Power Dissipation
12.5
W
PD@TA=25℃
Total Power Dissipation3
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
3
Value
Units
10
℃/W
62.5
℃/W
1
201501122
AP09T10GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
100
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=3A
-
-
300
mΩ
VGS=4.5V, ID=1.5A
-
-
600
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=3A
-
3
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=3A
-
5.5
8.8
nC
Qgs
Gate-Source Charge
VDS=80V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2.2
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
6.5
-
ns
tr
Rise Time
ID=3A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
10
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
190
300
pF
Coss
Output Capacitance
VDS=25V
-
30
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Rg
Gate Resistance
f=1.0MHz
1
2
4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=3A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
31
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
47
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP09T10GH-HF
10
8
T C = 25 o C
ID , Drain Current (A)
8
ID , Drain Current (A)
T C = 150 o C
10V
7.0V
6.0V
6
5.0V
4
10V
7.0V
6.0V
6
5.0V
4
V G = 4.0V
2
2
V G = 4.0V
0
0
0
2
4
6
8
0
10
2
Fig 1. Typical Output Characteristics
6
8
10
12
14
Fig 2. Typical Output Characteristics
700
2.4
I D =3A
V G =10V
I D =1.5A
o
T C =25 C
600
2.0
Normalized RDS(ON)
RDS(ON) (mΩ)
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
500
400
1.6
1.2
0.8
300
0.4
200
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
4
I D =250uA
T j =150 o C
Normalized VGS(th)
IS(A)
3
T j =25 o C
2
1.2
0.8
0.4
1
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP09T10GH-HF
ID=3A
V DS = 80 V
10
300
8
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
400
12
6
200
C iss
4
100
2
C oss
C rss
0
0
0
2
4
6
8
1
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
ID (A)
9
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
10
Operation in this area
limited by RDS(ON)
100us
1
1ms
o
10ms
100ms
DC
T C =25 C
Single Pulse
1
10
100
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
Single Pulse
0.01
0.1
0.1
Duty factor=0.5
0.00001
1000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
6
6
V DS =5V
5
ID , Drain Current (A)
ID , Drain Current (A)
5
4
3
2
o
4
3
2
o
T j =150 C
T j =25 C
1
1
0
0
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
7
8
25
50
75
100
125
150
T C , Case Temperature ( o C )
Fig 12. Drain Current v.s. Case Temperature
4
AP09T10GH-HF
MARKING INFORMATION
09T10GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5