isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX32/A/B DESCRIPTION · High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUX32 = 450V (Min)-BUX32A = 450V (Min)-BUX32B ·Low Saturation Voltage APPLICATIONS ·Designed for off-line power supplies and are also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage MAX BUX32 800 BUX32A 900 BUX32B 1000 BUX32 400 BUX32A 450 BUX32B 500 UNIT V V Emitter-Base Voltage 8 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 200 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX32/A/B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUX32 VCEO(SUS) Collector-Emitter Sustaining Voltage BUX32A MIN TYP. MAX UNIT 400 IC= 50mA ; IB= 0 BUX32B 450 V 500 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.3 V BUX32 VCB= 800V; IB= 0 VCB= 800V; IB= 0,TC=125℃ 0.1 1.0 BUX32A VCB= 900V; IB= 0 VCB= 900V; IB= 0,TC=125℃ 0.1 1.0 BUX32B VCB= 1000V; IE= 0 VCB= 1000V; IE= 0,TC=125℃ 0.1 1.0 ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VEB= 8V; IC= 0 hFE DC Current Gain IC= 6A ; VCE= 3V 8 Current-Gain—Bandwidth Product IC= 0.2A ;VCE= 10V 15 fT isc website：www.iscsemi.com 2 2 mA mA MHz isc & iscsemi is registered trademark