CXT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING: FULL PART NUMBER FEATURES: • General purpose switching and amplification • Telephone applications • High Collector Breakdown Voltage: 250V • Low Leakage Current: 50nA MAX • Low Saturation Voltage: 100mV MAX @ 50mA • Complementary Device: CXT5401E • SOT-89 Surface Mount Package MAXIMUM RATINGS: (TA=25°C) SYMBOL SOT-89 CASE APPLICATIONS: ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VCBO VCEO VEBO IC PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN SYMBOL UNITS 250 V 220 V 6.0 V 600 mA 1.2 W -65 to +150 °C 104 °C/W MAX UNITS nA ICBO VCB=120V 50 ICBO VCB=120V, TA=100°C VEB=4.0V 50 μA 50 nA IEBO ♦ BVCBO ♦ BVCEO BVEBO ♦ VCE(SAT) ♦ VCE(SAT) VBE(SAT) VBE(SAT) IC=100µA 250 IC=1.0mA 220 V IE=10μA 6.0 V IC=10mA, IC=50mA, IB=1.0mA IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA V 75 mV 100 mV 1.00 V 1.00 V ♦ Enhanced specification R1 (23-February 2010) CXT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ♦ hFE ♦ hFE ♦ hFE ♦ hFE fT Cob Cib hfe NF VCE=5.0V, IC=1.0mA 120 VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA 120 UNITS 300 75 VCE=10V, IC=150mA VCE=10V, IC=10mA, f=100MHz 25 100 VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200μA, RS=10Ω, 50 f=10Hz to 15.7kHz 300 MHz 6.0 pF 20 pF 200 8.0 dB ♦ Enhanced specification SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (23-February 2010) w w w. c e n t r a l s e m i . c o m