Central CXT5551E Surface mount npn silicon transistor Datasheet

CXT5551E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT5551E is an
NPN Silicon Transistor, packaged in an SOT-89 case,
designed for general purpose amplifier applications
requiring high breakdown voltage.
MARKING: FULL PART NUMBER
FEATURES:
• General purpose switching and amplification
• Telephone applications
• High Collector Breakdown Voltage: 250V
• Low Leakage Current: 50nA MAX
• Low Saturation Voltage: 100mV MAX @ 50mA
• Complementary Device: CXT5401E
• SOT-89 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
SOT-89 CASE
APPLICATIONS:
♦ Collector-Base Voltage
♦ Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
SYMBOL
UNITS
250
V
220
V
6.0
V
600
mA
1.2
W
-65 to +150
°C
104
°C/W
MAX
UNITS
nA
ICBO
VCB=120V
50
ICBO
VCB=120V, TA=100°C
VEB=4.0V
50
μA
50
nA
IEBO
♦ BVCBO
♦ BVCEO
BVEBO
♦ VCE(SAT)
♦ VCE(SAT)
VBE(SAT)
VBE(SAT)
IC=100µA
250
IC=1.0mA
220
V
IE=10μA
6.0
V
IC=10mA,
IC=50mA,
IB=1.0mA
IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
V
75
mV
100
mV
1.00
V
1.00
V
♦ Enhanced specification
R1 (23-February 2010)
CXT5551E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
♦ hFE
♦ hFE
♦ hFE
♦ hFE
fT
Cob
Cib
hfe
NF
VCE=5.0V, IC=1.0mA
120
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
120
UNITS
300
75
VCE=10V, IC=150mA
VCE=10V, IC=10mA, f=100MHz
25
100
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200μA, RS=10Ω,
50
f=10Hz to 15.7kHz
300
MHz
6.0
pF
20
pF
200
8.0
dB
♦ Enhanced specification
SOT-89 CASE - MECHANICAL OUTLINE
(Bottom View)
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
R1 (23-February 2010)
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