<£s.m.L-(lonductoi ^Pi , Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MAC15 Series Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Features • Blocking Voltage to 800 V • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes (MAC15A Series) • These Devices are Pb-Free and are RoHS Compliant* TRIACS 15 AMPERES RMS 400 thru 800 VOLTS MT2 O MT1 MARKING DIAGRAM MAXIMUM RATINGS (Tj = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage Note 1 (Tj = -40 to +1 25°C, Sine Wave 50 to 60 Hz, Gate Open) MAC15A6G MAC15-8G, MAC15A8G MAC15-10G, MAC15A10G VDRM, Peak Gate Voltage (Pulse Width < 1 ,0 usec; Tc = 90°C) Value Unit 400 600 800 VGM 10 V On-State Current RMS; Full Cycle Sine Wave 50 to 60 Hz (Tc = +90°C) !T(RMS) 15 A Circuit Fusing Consideration (t = 8.3 ms) I2t 93 A2s Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, Tc = +80°C) Preceded and Followed by Rated Current ITSM 150 A Peak Gate Power (Tc = +80°C, Pulse Width = 1.0 us) PGM 20 W PG(AV) 0.5 W Peak Gate Current (Pulse Width < 1 .0 (isec; Tc = 90°C) IGM 2.0 A Operating Junction Temperature Range Tj -40 to +125 °c °c Average Gate Power (Tc = +80°C, t = 8.3 ms) Storage Temperature Range TO-220AB V VRRM -40 to +150 MAC15xx xx A Y WW = Specific Device Code = See Table on Page 2 = Assembly Location (Optional)* = Year = Work Week Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofgoing to press. However, NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors MAC15 Series THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance, Junction-to-Case Rejc 2.0 °C/W Thermal Resistance, Junction-to-Ambient RHJA 62.5 °c/w TL 260 °c Characteristic Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM, IRRM - - 10 2.0 HA mA VTM - 1.3 1.6 OFF CHARACTERISTICS Peak Blocking Current (VD = Rated VDRM, VRRM; Gate Open) Tj = 25°C Tj = 1 25°C ON CHARACTERISTICS Peak On-State Voltage Note 2 (|JM = ±21 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, R|_ = 100 Q) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) "A" SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Q) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) "A" SUFFIX ONLY VGT Gate Non-Trigger Voltage (VD = 1 2 V, RL = 1 00 Q) Tj = 1 1 0°C) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) "A" SUFFIX ONLY VGD Holding Current (Vp = 12 Vdc, Gate Open, Initiating Current = ±200 mA) Turn-On Time (VD = Rated VDRM, ITM = 17 A) (IGT = 120 mA, Rise Time = 0.1 (is, Pulse Width = 2 \i&) V mA - - 50 50 50 75 0.9 0.9 1.1 1.4 2 2 2 2.5 V - 0.2 0.2 „ : V - 6.0 40 mA 'gt - 1.5 - (IS dv/dt(c) - 5.0 - V/^s IH DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms, Gate Unenergized, TC = 80°C) 2. Pulse Test: Pulse Width < 2.0 ms, Duty Cycle < 2%.