MA111 Zener Diodes Composite Elements MA3075WA Silicon planer type Constant voltage, constant current, waveform cripper and surge absorption circuit 1.45 0.95 1 3 +0.1 0.4 –0.05 anode-common wiring of MA3075 1.9±0.2 ● Two 0.65±0.15 0.95 +0.2 2.9 –0.05 type package (3-pin) +0.25 1.5 –0.05 0.65±0.15 ■ Features ● Mini Unit : mm +0.2 2.8 –0.3 ■ Absolute Maximum Ratings (Ta= 25˚C) Symbol Rating Unit IF(AV) 100*1 mA Instanious forward current IFRM 200*1 mA Total power dissipation Ptot*2 100*1 mW Non-repetitive reverse surge power dissipation PZSM*3 15 W Junction temperature Tj 150 ˚C Storage temperature Tstg – 55 to + 150 ˚C +0.1 0.16 –0.06 0 to 0.1 0.1 to 0.3 0.4±0.2 Average forward current Parameter 0.8 +0.2 1.1 –0.1 2 1 : Cathode 1 2 : Cathode 2 3 : Anode 1 Anode 2 Mini Type Package (3-pin) ■ Internal Connection *1 Working value in a single piece *2 With a printed-circuit board *3 t=100µ s, Tj=150˚C 1 3 2 1 ■ Electrical Characteristics (Ta= 25˚C)* Parameter Forward voltage Zener voltage Operating resistance Reverse current Temperature coefficient of zener voltage Condition Symbol VZ min IF=10mA VF *2 IZ = 5mA RZK IZ = 0.5mA RZ IZ = 5mA IR1 VR = 5V IR2 VR = 6.5V SZ *3 IZ = 5mA 7.0 7.5A max 0.8 0.9 7.5 6 2.5 Note 1. Rated input/output frequency : 5MHz 2. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application * 3 : Tj= 25 to 150˚C ■ Marking typ 4.0 Unit V 7.9 V 120 Ω 15 Ω 1 µA 60 µA 5.3 mV/˚C MA3075WA Zener Diodes Composite Elements Ptot – Ta 200 IF – VF 100 10mm 10mm K With a printed-circuit board VF – Ta 1.6 1.4 100 50 10 1 Ta=150˚C 0.1 –20˚C 100˚C 0 40 80 120 160 Ambient temperature 0 200 0.2 IF=100mA 0.8 (˚C) Ta 0.6 0.8 0.2 1.0 0 –40 1.2 0 40 IZ (mA) 100 5V Zener current IR (nA) Reverse current (˚C) 10 VR=6V 1 160 Ta 100 Ta=150˚C 10 120 IZ – V Z 1000 100˚C 25˚C 80 Ambient temperature IR – Ta 1000 100 3mA 0.4 VF (V) Forward voltage 10mA 0.6 25˚C 0.4 IR – VR IR (nA) 1.0 0.01 0 Reverse current 1.2 VF (V) IF (mA) 150 Forward voltage 0.8mm Cu foil t=0.035 mm Forward curren Power dissipation Ptot (mW) A 10 1V 1 25˚C Ta=–20˚C –100˚C 150˚C 0.1 1 0.01 0.1 –40 0.1 0 2.0 4.0 6.0 Reverse voltage 8.0 10.0 12.0 VR (V) 0 40 Ta 300 200 (˚C) Ta=25˚C f=1MHz Ta=25˚C 70 160 RZ – IZ 80 RZ (Ω) 100 60 50 Operating resistance CD (pF) 120 Ambient temperature CD – VR Diode capacitance 80 40 30 20 30 10 3 1 10 0 0 1 2 3 Reverse voltage 4 5 VR (V) 6 0.3 0.3 0.5 1 3 5 Zener current 10 IZ (mA) 30 50 0.001 6.5 7.5 Zener voltage 8.5 VZ (V) 200