MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium. (3) (2) R1 (1) R2 Q1 Q2 R2 R1 (4) (5) (6) Features • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel Pb−Free Package is Available 6 1 SOT−363 CASE 419B STYLE 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit PD 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) mW/°C 670 (Note 1) 490 (Note 2) °C/W Symbol Max Unit PD 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) mW RJA Total Device Dissipation TA = 25°C Derate above 25°C 6 XXd 1 XX = Specific Device Code d = Date Code = (See Page 2) ORDERING AND DEVICE MARKING INFORMATION See detailed ordering, shipping, and specific marking information in the table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. mW/°C Thermal Resistance − Junction-to-Ambient RJA 493 (Note 1) 325 (Note 2) °C/W Thermal Resistance − Junction-to-Lead RJL 188 (Note 1) 208 (Note 2) °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature MARKING DIAGRAM 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad Semiconductor Components Industries, LLC, 2004 September, 2004 − Rev. 9 1 Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1 Series ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping† MUN5311DW1T1 SOT−363 11 10 10 3000/Tape & Reel MUN5312DW1T1 SOT−363 12 22 22 3000/Tape & Reel MUN5313DW1T1 SOT−363 13 47 47 3000/Tape & Reel MUN5314DW1T1 SOT−363 14 10 47 3000/Tape & Reel MUN5315DW1T1 SOT−363 15 10 ∞ 3000/Tape & Reel MUN5316DW1T1 SOT−363 16 4.7 ∞ 3000/Tape & Reel MUN5316DW1T1G SOT−363 (Pb−Free) 16 4.7 ∞ 3000/Tape & Reel MUN5330DW1T1 SOT−363 30 1.0 1.0 3000/Tape & Reel MUN5331DW1T1 SOT−363 31 2.2 2.2 3000/Tape & Reel MUN5332DW1T1 SOT−363 32 4.7 4.7 3000/Tape & Reel MUN5333DW1T1 SOT−363 33 4.7 47 3000/Tape & Reel MUN5334DW1T1 SOT−363 34 22 47 3000/Tape & Reel MUN5335DW1T1 SOT−363 35 2.2 47 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc OFF CHARACTERISTICS MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 2 MUN5311DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) (Continued) Characteristic Symbol Min Typ Max Unit hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 − − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 k R1/R2 0.8 0.17 − 0.8 0.055 0.38 0.038 1.0 0.21 − 1.0 0.1 0.47 0.047 1.2 0.25 − 1.2 0.185 0.56 0.056 ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5330DW1T1/MUN5331DW1T1 (IC = 10 mA, IB = 1 mA) MUN5315DW1T1/MUN5316DW1T1 MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) Input Resistor VOL MUN5311DW1T1 MUN5312DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 MUN5313DW1T1 Vdc Vdc MUN5330DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5333DW1T1 MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1/MUN5316DW1T1 MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 3 MUN5311DW1T1 Series ALL MUN5311DW1T1 SERIES DEVICES PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 −50 RJA = 490°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 4 150 MUN5311DW1T1 Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 NPN TRANSISTOR TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 25°C −25°C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C 1 0.1 0.01 VO = 5 V 0.001 50 TA=−25°C 10 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 50 10 MUN5311DW1T1 Series 1000 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 PNP TRANSISTOR TA=−25°C 0.1 25°C 75°C 0.01 0 20 25°C 100 10 −25°C 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 50 1 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=−25°C 10 1 0.1 0.01 0.001 50 100 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0 10 8 9 Figure 10. Output Current versus Input Voltage 10 0.1 100 25°C 75°C Figure 9. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75°C IC, COLLECTOR CURRENT (mA) 40 4 0 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 50 10 MUN5311DW1T1 Series 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1 NPN TRANSISTOR IC/IB = 10 25°C TA=−25°C 0.1 75°C 0.01 0.001 0 20 −25°C 100 1 100 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 4 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 2 1 75°C 25°C TA=−25°C 10 1 0.1 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 Figure 14. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75°C 25°C 10 50 40 VCE = 10 V 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 7 50 MUN5311DW1T1 Series 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1 PNP TRANSISTOR IC/IB = 10 1 25°C TA=−25°C 75°C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 TA=75°C 10 1 Figure 18. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=−25°C 10 1 0.1 0.01 0.001 50 Figure 19. Output Capacitance 100 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25°C 75°C 1 0 10 8 9 Figure 20. Output Current versus Input Voltage TA=−25°C 0.1 100 IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) versus IC 3 25°C −25°C 100 10 50 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 10 MUN5311DW1T1 Series 10 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1 NPN TRANSISTOR 1 25°C TA=−25°C 75°C 0.1 0.01 0 TA=75°C 25°C −25°C 100 10 50 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V 10 IC, COLLECTOR CURRENT (mA) 1 Figure 22. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 0.2 0 0 25°C 75°C 0.6 TA=−25°C 10 1 0.1 0.01 VO = 5 V 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 25. Output Current versus Input Voltage Figure 24. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) Figure 23. DC Current Gain f = 1 MHz IE = 0 V TA = 25°C 0.8 100 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 9 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1 PNP TRANSISTOR VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 1000 TA=−25°C 25°C 75°C 0.1 0.01 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0.2 0 0 −25°C 1 0.1 0.01 Figure 29. Output Capacitance VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 9 Figure 30. Output Current versus Input Voltage 100 10 25°C TA=75°C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 10 10 MUN5311DW1T1 Series 1 300 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1 NPN TRANSISTOR TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C VCE = 10 250 25°C 200 −25°C 150 100 50 0 80 2 1 4 6 Figure 32. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25°C 3 TA=75°C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25°C −25°C 10 VO = 5 V 1 50 Figure 34. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 Figure 35. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 33. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 36. Input Voltage versus Output Current http://onsemi.com 11 50 10 MUN5311DW1T1 Series 1 180 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1 PNP TRANSISTOR TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C VCE = 10 V 160 25°C 140 −25°C 120 100 80 60 40 20 0 80 2 1 4 6 Figure 37. VCE(sat) versus IC 100 TA=75°C 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 10 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25°C TA=−25°C 75°C 1 0 10 8 10 Figure 40. Output Current versus Input Voltage 10 0.1 25°C −25°C 1 50 Figure 39. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 80 90 100 Figure 38. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 12 MUN5311DW1T1 Series 1 1000 IC/IB = 10 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = −25°C 100 10 1 50 25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) versus IC 100 Figure 43. DC Current Gain 12 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 44. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 25°C 75°C VO = 0.2 V 0.1 0 9 10 Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1 NPN TRANSISTOR 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 46. Input Voltage versus Output Current http://onsemi.com 13 50 MUN5311DW1T1 Series 1 1000 IC/IB = 10 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25°C 10 1 50 TA = −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 47. VCE(sat) versus IC 100 Figure 48. DC Current Gain 100 4 IC, COLLECTOR CURRENT (mA) 4.5 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 49. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 25°C 75°C VO = 0.2 V 0.1 0 9 10 Figure 50. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1 PNP TRANSISTOR 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 51. Input Voltage versus Output Current http://onsemi.com 14 50 MUN5311DW1T1 Series 1 1000 IC/IB = 10 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25°C 10 1 50 TA = −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 52. VCE(sat) versus IC 100 Figure 53. DC Current Gain 12 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 54. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 25°C 75°C VO = 0.2 V 0.1 0 9 10 Figure 55. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1 NPN TRANSISTOR 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 56. Input Voltage versus Output Current http://onsemi.com 15 50 MUN5311DW1T1 Series 1 1000 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = −25°C 10 1 50 25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 57. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 4 3.5 100 Figure 58. DC Current Gain 4.5 3 2.5 2 1.5 1 0.5 75°C 10 25°C TA = −25°C 1 0.1 0.01 VO = 5 V 0.001 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 59. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 25°C 75°C VO = 0.2 V 0.1 0 9 10 Figure 60. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) VCE = 10 V 75°C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1 PNP TRANSISTOR 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 61. Input Voltage versus Output Current http://onsemi.com 16 50 MUN5311DW1T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1 NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 100 75°C 10 25°C TA = −25°C 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 1 30 1 10 IC, COLLECTOR CURRENT (mA) Figure 62. VCE(sat) versus IC Figure 63. DC Current Gain 10 100 75°C 10 Vin, INPUT VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) 100 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V TA = −25°C 1 25°C VO = 0.2 V 0.1 0.001 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 75°C 0 20 5 10 15 IC, COLLECTOR CURRENT (mA) Figure 65. Input Voltage versus Output Current Figure 64. Output Current versus Input Voltage http://onsemi.com 17 25 MUN5311DW1T1 Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1 PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 75°C 10 25°C TA = −25°C VCE = 10 V 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 66. VCE(sat) versus IC Figure 67. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 100 4 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 68. Output Capacitance 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 75°C 1 25°C VO = 0.2 V 0.1 0 9 10 Figure 69. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 70. Input Voltage versus Output Current http://onsemi.com 18 50 MUN5311DW1T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1 NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 100 75°C TA = −25°C 1 30 25°C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 71. VCE(sat) versus IC Figure 72. DC Current Gain 12 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 10 75°C 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 73. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 74. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 75. Input Voltage versus Output Current http://onsemi.com 19 25 MUN5311DW1T1 Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1 PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 TA = −25°C VCE = 10 V 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 76. VCE(sat) versus IC 100 Figure 77. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 100 4 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 78. Output Capacitance 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 75°C 1 25°C VO = 0.2 V 0.1 0 9 10 Figure 79. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 25°C 75°C 10 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 80. Input Voltage versus Output Current http://onsemi.com 20 50 MUN5311DW1T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1 NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75°C 100 25°C 10 TA = −25°C 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 81. VCE(sat) versus IC Figure 82. DC Current Gain 12 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 10 8 6 4 2 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 83. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 25°C 1 75°C VO = 0.2 V 0.1 0 9 10 Figure 84. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 85. Input Voltage versus Output Current http://onsemi.com 21 50 MUN5311DW1T1 Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1 PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) TA = −25°C 10 1 50 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 86. VCE(sat) versus IC 100 Figure 87. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 6 f = 1 MHz IE = 0 V TA = 25°C 5 4 3 2 1 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 88. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 89. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 90. Input Voltage versus Output Current http://onsemi.com 22 50 MUN5311DW1T1 Series 1000 1 VCE = 10 V IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1 NPN TRANSISTOR 75°C −25°C 25°C 0.01 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 75°C 25°C 10 1 30 TA = −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 91. VCE(sat) versus IC Figure 92. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 93. Output Capacitance 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 94. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 95. Input Voltage versus Output Current http://onsemi.com 23 25 MUN5311DW1T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1 PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 96. VCE(sat) versus IC 100 Figure 97. DC Current Gain 8 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 7 6 5 4 3 2 1 0 75°C 10 25°C 1 0.1 TA = −25°C 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 98. Output Capacitance 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 99. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 100. Input Voltage versus Output Current http://onsemi.com 24 50 MUN5311DW1T1 Series 1 1000 VCE = 10 V IC/IB = 10 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1 NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 101. VCE(sat) versus IC 100 Figure 102. DC Current Gain 3.5 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 0.1 TA = −25°C 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 103. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 10 TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 Figure 104. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 25°C 10 1 50 TA = −25°C 40 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 105. Input Voltage versus Output Current http://onsemi.com 25 50 10 MUN5311DW1T1 Series 1000 1 VCE = 10 V IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1 PNP TRANSISTOR 75°C −25°C 25°C 0.01 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 30 75°C 100 TA = −25°C 25°C 10 1 1 Figure 106. VCE(sat) versus IC 10 IC, COLLECTOR CURRENT (mA) Figure 107. DC Current Gain http://onsemi.com 26 100 MUN5311DW1T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1 NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 108. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25°C 8 6 4 2 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 110. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 Figure 111. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 109. DC Current Gain 12 10 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 112. Input Voltage versus Output Current http://onsemi.com 27 50 10 MUN5311DW1T1 Series 1000 1 VCE = 10 V IC/IB = 10 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1 PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 113. VCE(sat) versus IC 100 Figure 114. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 100 4 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 25°C 10 75°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 115. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 75°C 1 25°C TA = −25°C VO = 0.2 V 0.1 0 9 Figure 116. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 117. Input Voltage versus Output Current http://onsemi.com 28 50 10 MUN5311DW1T1 Series 1 0.1 75°C 25°C −25°C IC/IB = 10 0.01 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1 NPN TRANSISTOR 1000 75°C TA = −25°C 100 25°C 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 118. VCE(sat) versus IC Figure 119. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25°C 0.8 0.6 0.4 0.2 25°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 1 VO = 5 V 0 1 2 3 4 TA = −25°C 10 VO = 0.2 V 75°C 0 2 6 7 8 9 Figure 121. Output Current versus Input Voltage 100 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 120. Output Capacitance 25°C 75°C 10 0.1 0 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 0 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 122. Input Voltage versus Output Current http://onsemi.com 29 20 10 MUN5311DW1T1 Series 1000 1 VCE = 10 V −25°C IC/IB = 10 75°C 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1 PNP TRANSISTOR 25°C 0.1 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 100 25°C 10 1 50 TA = −25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 123. VCE(sat) versus IC Figure 124. DC Current Gain 5 IC, COLLECTOR CURRENT (mA) 100 4.5 f = 1 MHz IE = 0 V TA = 25°C 4 3.5 3 2.5 2 1.5 1 0.5 0 75°C 10 1 25°C TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 125. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 10 75°C 25°C 1 VO = 0.2 V 0.1 0 9 Figure 126. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 127. Input Voltage versus Output Current http://onsemi.com 30 50 10 MUN5311DW1T1 Series hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1 NPN TRANSISTOR 1 TA = −25°C 75°C 0.1 25°C IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 1000 75°C TA = −25°C 100 25°C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 128. VCE(sat) versus IC Figure 129. DC Current Gain 100 1.2 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 1.0 0.8 0.6 0.4 0.2 75°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 10 25°C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = −25°C 75°C 25°C 0 6 7 8 9 10 Figure 131. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 130. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 0 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 132. Input Voltage versus Output Current http://onsemi.com 31 25 11 MUN5311DW1T1 Series 1000 1 VCE = 10 V IC/IB = 10 −25°C 75°C 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1 PNP TRANSISTOR 25°C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 75°C 100 25°C 10 1 50 TA = −25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 133. VCE(sat) versus IC Figure 134. DC Current Gain 5 IC, COLLECTOR CURRENT (mA) 100 4.5 f = 1 MHz IE = 0 V TA = 25°C 4 3.5 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 50 Figure 135. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 10 75°C 25°C 1 VO = 0.2 V 0.1 0 9 Figure 136. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 40 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 137. Input Voltage versus Output Current http://onsemi.com 32 50 10 MUN5311DW1T1 Series PACKAGE DIMENSIONS SOT−363 CASE 419B−02 ISSUE T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. A G 6 5 4 1 2 3 DIM A B C D G H J K N S −B− S D 6 PL 0.2 (0.008) M B M STYLE 1: PIN 1. 2. 3. 4. 5. 6. N J C H INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 33 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MUN5311DW1T1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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