Product Bulletin OP705 March 1999 NPN Phototransistor with Base-Emitter Resistor Types OP705A, OP705B, OP705C, OP705D Features Absolute Maxi mum Ratings (TA = 25o C unless otherwise noted) • • • • Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter Reverse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Collector DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Storage and Operating Temperature Range. . . . . . . . . . . . . . . . . . -40o C to +100o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) Narrow receiving angle Variety of sensitivity ranges T-1 package style Small package size for space limited applications • Base-emitter resistor provides ambient light protection Description The OP705 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent onaxis coupling. These devices are 100% production tested using infrared light for close correlation with Optek’s GaAs and GaAlAs emitters. Ò±¬»-æ (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.33 mW /o C above 25 o C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (4) The knee point irradiance is defined as the irradiance required to increase IC(ON) to 50•• A. Typical Performance Curves ̧°·½¿´ Í°»½¬®¿´ λ-°±²-» Schematic The phototransistor has an internal baseemitter resistor which provides protection from low level ambient lighting conditions. This feature is also useful when the media being detected is semitransparent to infrared light in interruptive applications. É¿ª»´»²¹¬¸ ó ²³ Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 5 (972) 323-2200 Fax (972) 323-2396 Types OP705A, OP705B, OP705C, OP705D Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS On-State Collector Current OP705A OP705B OP705C OP705D IC(ON) 12.0 7.25 4.85 12.0 3.95 2.65 1.50 1.50 TEST CONDITIONS 2(3) VCE = 5 V, Ee = .50 mW/cm mA mW/cm2 VCE = 5 V(4) EKP Knee Point Irradiance .02 ICEO Collector-Emitter Dark Current 100 nA VCE = 10 V, Ee = 0 IECO Emitter-Reverse Current 100 µA VEC = 0.4 V V IC = 100 µA 0.4 V IC = 250 µA, Ee = .50 mW/cm V(BR)CEO Collector-Emitter Breakdown Voltage VCE(SAT) Collector-Emitter Saturation Voltage 30 2(3) Typical Performance Curves Normalized Collector Current vs. Angular Displacement Normalized Light and Dark Current vs. Ambient Temperature On-State Collector Current vs. Irradiance ïðð ïð ï Ô·¹¸¬ Ý«®®»²¬ ÑÐëðë òï òðï ÑÐéðë òððï Ü¿®µ Ý«®®»²¬ Ê ÝÛ ã ë Ê ÔÛÜæ • ã çíë ²³ òðððï òððððï òððï • - Angular Displacement - Deg. Ìß ó ß³¾·»²¬ Ì»³°»®¿¬«®» ó ••Ý Normalized Output vs. Frequency òï Ee - Irradiance - mW/cm2 Typical Rise and Fall Time vs. Load Resistance ïòð òðï Switching Time Test Circuit ïîð VRL = 1 V VCE = 5 V 50% Duty Cycle LED: • = 935 nm VCC = 5 V VRL = 1 V f = 100 Hz PW = 1 mS LED = GaAIAS, • = 890 nm VRL is voltage across R L ïðë çð éë êð ðòë ìë ÎÔ ã ïÕ• íð ÎÔ ã ïðÕ• ïë ð ðòð ï ïð Frequency - KHz ïðð ïððð ð î ì ê è ÎÔ ó Ô±¿¼ λ-·-¬¿²½» ó Õ• ïð Ì»-¬ ݱ²¼·¬·±²-æ Ô·¹¸¬ -±«®½» ·- °«´-»¼ ÔÛÜ ©·¬¸ô ¬® ¿²¼ ¬º • ëðð ²-ò ×Ú ·- ¿¼¶«-¬»¼ º±® ÊÑËÌ ã ï ʱ´¬ò Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 6 ï