OPTEK OP705B Npn pho to tran sistor with base-emit ter resistor Datasheet

Product Bulletin OP705
March 1999
NPN Phototransistor with Base-Emitter Resistor
Types OP705A, OP705B, OP705C, OP705D
Features
Absolute Maxi mum Ratings (TA = 25o C unless otherwise noted)
•
•
•
•
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter Reverse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Collector DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Storage and Operating Temperature Range. . . . . . . . . . . . . . . . . . -40o C to +100o C
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
Narrow receiving angle
Variety of sensitivity ranges
T-1 package style
Small package size for space limited
applications
• Base-emitter resistor provides ambient
light protection
Description
The OP705 series devices consist of
NPN silicon phototransistors molded in
blue tinted epoxy packages. The narrow
receiving angle provides excellent onaxis coupling. These devices are 100%
production tested using infrared light for
close correlation with Optek’s GaAs and
GaAlAs emitters.
Ò±¬»-æ
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW /o C above 25 o C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase IC(ON) to 50•• A.
Typical Performance Curves
̧°·½¿´ Í°»½¬®¿´ λ-°±²-»
Schematic
The phototransistor has an internal baseemitter resistor which provides protection
from low level ambient lighting
conditions. This feature is also useful
when the media being detected is semitransparent to infrared light in interruptive
applications.
É¿ª»´»²¹¬¸ ó ²³
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
5
(972) 323-2200
Fax (972) 323-2396
Types OP705A, OP705B, OP705C, OP705D
Electrical Characteristics (TA = 25o C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
On-State Collector Current
OP705A
OP705B
OP705C
OP705D
IC(ON)
12.0
7.25
4.85
12.0
3.95
2.65
1.50
1.50
TEST CONDITIONS
2(3)
VCE = 5 V, Ee = .50 mW/cm
mA
mW/cm2 VCE = 5 V(4)
EKP
Knee Point Irradiance
.02
ICEO
Collector-Emitter Dark Current
100
nA
VCE = 10 V, Ee = 0
IECO
Emitter-Reverse Current
100
µA
VEC = 0.4 V
V
IC = 100 µA
0.4
V
IC = 250 µA, Ee = .50 mW/cm
V(BR)CEO
Collector-Emitter Breakdown Voltage
VCE(SAT)
Collector-Emitter Saturation Voltage
30
2(3)
Typical Performance Curves
Normalized Collector Current
vs. Angular Displacement
Normalized Light and Dark
Current vs. Ambient Temperature
On-State Collector Current
vs. Irradiance
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• - Angular Displacement - Deg.
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Normalized Output
vs. Frequency
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Ee - Irradiance - mW/cm2
Typical Rise and Fall Time
vs. Load Resistance
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Switching Time
Test Circuit
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VRL = 1 V
VCE = 5 V
50% Duty Cycle
LED: • = 935 nm
VCC = 5 V
VRL = 1 V
f = 100 Hz
PW = 1 mS
LED = GaAIAS, • = 890 nm
VRL is voltage across R L
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Frequency - KHz
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Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972) 323-2200
Fax (972) 323-2396
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