BUZ73A Semiconductor Data Sheet 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET October 1998 File Number 2263.1 Features • 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as • SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (5.8A, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 200V, • High Input Impedance 0.600 Formerly developmental type TA4600. • Majority Carrier Device Ohm, N• Related Literature Channel Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND Power Components to PC Boards” BUZ73A TO-220AB BUZ73A MOSNOTE: When ordering, use the entire part number. FET) Symbol /Author D () /KeyG words (Harris S Semiconductor, NChannel Packaging Power JEDEC TO-220AB MOSSOURCE FET, DRAIN GATE TODRAIN (FLANGE) 220AB) /Creator () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ73A TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current (TC = 30oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ76A 200 200 5.8 23 ±20 40 0.32 -55 to 150 E 55/150/56 UNITS V V A A V W W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 200 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V Zero Gate Voltage Drain Current TJ = 25oC, VDS = 200V, VGS = 0V TJ = 125oC, VDS = 200V, VGS = 0V - 20 250 µA - 100 1000 µA VGS = 20V, VDS = 0V - 10 100 nA rDS(ON) ID = 3.5A, VGS = 10V (Figure 8) - 0.5 0.600 Ω gfs VDS = 25V, ID = 3.5A (Figure 11) 2.2 3.5 - S - 15 20 ns - 40 60 ns - 70 90 ns IDSS Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time VCC = 30V, ID ≈ 2.8A, VGS = 10V, RGS = 50Ω, RL = 10Ω. (Figures 14, 15) td(OFF) Fall Time tf Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 40 55 ns - 450 600 pF - 100 160 pF - 50 80 pF Thermal Resistance Junction to Case RθJC ≤ 3.1 oC/W Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current Pulsed Source to Drain Current ISD TEST CONDITIONS TC = 25oC ISDM Drain to Source Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge QRR TJ = 25oC, ISD = 11.6A, VGS = 0V TJ = 25oC, ISD = 5.8A, dISD/dt = 100A/µs, VR = 100V MIN TYP MAX UNITS - - 5.8 A - - 23 A - 1.4 1.7 V - 200 - ns - 0.6 - µC NOTES: 2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 2 BUZ73A Unless Otherwise Specified 1.2 6 1.0 5 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 0.2 VGS ≥ 10V 4 3 2 1 0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) FIGURE 18. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE ZθJC, TRANSIENT THERMAL IMPEDANCE 0 150 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 19. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 0 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 0.01 10-5 10-1 10-3 10-2 tp, RECTANGULAR PULSE DURATION (s) 10-4 100 101 FIGURE 20. MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 15 PD = 40W 7.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = MAX RATED TC = 25oC 1µs 101 10µs 100µs 100 10-1 100 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 101 1ms 8.0V 10V 20V VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 21. FORWARD BIAS SAFE OPERATING AREA VGS = 7.0V VGS = 6.5V VGS = 6.0V VGS = 5.5V 5 VGS = 5.0V 10ms 100ms DC 102 3 10 PULSE DURATION = 80µs TJ = 25oC VGS = 4.5V VGS = 4.0V 103 0 0 5 25 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 22. OUTPUT CHARACTERISTICS 30 BUZ73A 15 Unless Otherwise Specified (Continued) 3 PULSE DURATION = 80µs VDS = 25V TJ = 25oC rDS(ON), ON STATE RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves 10 5 0 5 VGS, GATE TO SOURCE VOLTAGE (V) 10 2.0 PULSE DURATION = 80µs ID = 3.5A VGS = 10V 1.5 1.0 0.5 0 -50 0 50 100 150 1 9V 10V 20V 0 4 gfs, TRANSCONDUCTANCE (S) C, CAPACITANCE (nF) CISS COSS CRSS 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 FIGURE 27. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4 15 VDS = VGS, ID = 1mA 3 2 1 0 -50 5 VGS = 0, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGS 0 5 10 ID, DRAIN CURRENT (A) 0 50 100 150 FIGURE 26. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 100 10-2 6.5V TJ, JUNCTION TEMPERATURE (oC) FIGURE 25. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 10-1 6V 7V 7.5V 8V TJ, JUNCTION TEMPERATURE (oC) 101 5.5V VGS = 5V FIGURE 24. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT VGS(TH), GATE THRESHOLD VOLTAGE (V) FIGURE 23. TRANSFER CHARACTERISTICS rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) 2 0 0 PULSE DURATION = 80µs PULSE DURATION = 80µs VDS = 25V TJ = 25oC 4 3 2 1 0 0 5 10 ID, DRAIN CURRENT (A) FIGURE 28. TRANSCONDUCTANCE vs DRAIN CURRENT 15 BUZ73A Typical Performance Curves 15 PULSE DURATION = 80µs 101 TJ = 150oC 100 10-1 0 ID = 10.5A VGS, GATE TO SOURCE VOLTAGE (V) ISD, SOURCE TO DRAIN CURRENT (A) 102 Unless Otherwise Specified (Continued) TJ = 25oC 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V) 10 VDS = 40V VDS = 160V 5 0 3.0 0 5 15 10 20 25 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 29. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 30. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 31. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH FIGURE 32. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% 10% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 33. GATE CHARGE TEST CIRCUIT 5 Ig(REF) 0 FIGURE 34. GATE CHARGE WAVEFORMS