Diode Semiconductor Korea GBP2005 - - - GBP210 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 2.0 A SILICON BRIDGE RECTIFIERS FEATURES GBP Rating to 1000V PRV Surge overload rating to 50 Amperes peak 14.5± 0.25 3.6± 0.15 Reliable low cost construction utilizing molded + ~ ~ - plastic technique results in inexpensive product Lead solderable per MIL-STD-202 method 208 1.5± 0.15 10.3± 0.2 Ideal for printed circuit board 2.5± 0.2 Plastic material has UL flammability classification 0.5± 0.1 94V-O 0.75± 0.1 4.0± 0.2 Glass passivated junction Weight: 0.05 ounces,1.52 grams Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. GBP 2005 GBP 201 GBP 202 GBP 204 GBP 206 GBP 208 GBP 210 UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage V DC 50 100 200 400 600 800 1000 V Maximum average forw ard Output current @TA=25 IF(AV) 2.0 A IFSM 50 A VF 1.1 V 5.0 μA 1.0 mA Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage @ 1.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =125 Operating junction temperature range Storage temperature range IR TJ - 55 ---- + 150 TSTG - 55 ---- + 150 www.diode.kr Diode Semiconductor Korea GBP2005 - - - GBP210 FIG.2 -- FORWARD DERATING CURVE VVNVVOUTPUT RECTIFIED CURRENT 50 40 30 20 10 0 1 100 10 AVERAGE FORWARD OUTPUT CURRENT, AMPERSES PEAK FORWARD SURGE CURRENT, AMPERSES FIG.1 -- PEAK FORWARD SURGE CURRENT 2.0 Resislive or Inductive Load 1.6 9.5mm 1.2 0.8 COPPERPADS PCB (5.5mm x 5.5mm) 0.4 0 NUMBER OF CYCLES AT 60HZ 1.0 0.1 0.9 1.0 1.1 1.2 1.3 1.4 60 80 100 120 140 150 1.5 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICRO AMPERSES AMPERSES INSTANTANEOUS FORWARD CURRENT, 10 0.8 40 AMBIENT TEMPERATURE, FIG.3 -- TYPICAL FORWARD CHARACTERISTICS 0.7 20 100000 10000 1000 TJ =125°C 100 TJ=25°C 10 1.0 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,% www.diode.kr