MOSFET SMD Type P-Channel MOSFET AO4403-HF (KO4403-HF) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-6 A (VGS =-10V) 1.50 0.15 ● RDS(ON) ＜ 48mΩ (VGS =-10V) 0.21 -0.02 +0.04 ● RDS(ON) ＜ 57mΩ (VGS =-4.5V) ● RDS(ON) ＜ 80mΩ (VGS =-2.5V) 1 2 3 4 ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Avalanche Current Avalanche energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead L=0.1mH TA=25°C TA=70°C t ≤ 10s Steady-State ID -5 -30 IAS,IAR 18 EAS,EAR 16 RthJA V -6 IDM PD Unit 3.1 2 A mJ W 40 75 RthJL 24 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO4403-HF (KO4403-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS VDS=0V, VGS=±12V VGS(th) VDS=VGS ID=-250μA Gate Threshold Voltage ID=-250μA, VGS=0V Min Typ On state drain current RDS(On) VDS=-30V, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -5 ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg VGS=-10V, ID=-6A -0.5 80 VGS=-4.5V, VDS=-5V -30 VDS=-5V, ID=-6A 19 645 VGS=0V, VDS=-15V, f=1MHz 4 12 Ω 7 VGS=-4.5V, VDS=-15V, ID=-6A td(on) 6.5 tr Turn-Off DelayTime td(off) VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=6Ω 3.5 ns 41 tf 9 Body Diode Reverse Recovery Time trr 11 Body Diode Reverse Recovery Charge Qrr IF=-6A, dI/dt=100A/us nC 1.5 Turn-Off Fall Time www.kexin.com.cn pF 55 VGS=0V, VDS=0V, f=1MHz 3.5 IS IS=-1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. 2 S 780 80 Turn-On Rise Time KC**** F mΩ A Turn-On DelayTime 4403 V VGS=-2.5V, ID=-2A 2.5 Marking -1.3 57 Qgd ■ Marking nA 72 TJ=125℃ Gate Drain Charge VSD ±100 VGS=-4.5V, ID=-4A Qgs Maximum Body-Diode Continuous Current uA 48 Gate Source Charge Diode Forward Voltage Unit V VGS=-10V, ID=-6A Static Drain-Source On-Resistance Max -30 nC -3.5 A -1 V MOSFET SMD Type P-Channel MOSFET AO4403-HF (KO4403-HF) ■ Typical Characterisitics 30 20 -10V 25 VDS=-5V -4.5V 15 -ID(A) -ID (A) 15 -3V 20 -2.5V 10 125°C 10 25°C 5 5 VGS=-2V 0 0 0 1 2 3 4 0 5 1 1.5 90 Normalized On-Resistance 1.8 VGS=-2.5V 70 VGS=-4.5V 50 30 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) RDS(ON) (mΩ ) 0.5 VGS=-10V 10 VGS=-4.5V ID=-4A 1.6 VGS=-10V ID=-6A 1.4 1.2 VGS=-2.5V 10 ID=-2A 1 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1.0E+01 ID=-6A 1.0E+00 125°C 125°C 1.0E-01 -IS (A) RDS(ON) (mΩ ) 80 60 1.0E-02 25°C 1.0E-03 40 25°C 1.0E-04 1.0E-05 20 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO4403-HF (KO4403-HF) ■ Typical Characterisitics 5 1000 Ciss Capacitance (pF) 4 -VGS (Volts) 1200 VDS=-15V ID=-6A 3 2 800 600 400 1 Coss 200 0 0 0 2 4 6 8 10 0 5 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10µs 100µs 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 1s 10s DC 1 10 -VDS (Volts) 1 0.00001 100 1 0.001 0.1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 Ton 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) . Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 10 0.0 0.1 30 TJ(Max)=150°C TA=25°C 1000 Power (W) RDS(ON) limited 1.0 Zθ JA Normalized Transient Thermal Resistance 10 10000 10.0 -ID (Amps) Crss www.kexin.com.cn 100 1000