Diodes DMG2305UXQ P-channel enhancement mode mosfet Datasheet

DMG2305UXQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS
RDS(ON) Max
Package
-20V
52mΩ @VGS = -4.5V
100mΩ @VGS = -2.5V
SOT23
ID
TA = +25°C
-5.0A
-3.6A







Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:






Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)


Backlighting
Power Management Functions
DC-DC Converters
Motor Control


D
D
G
S
G
S
Top View
Top View
Internal Schematic
Ordering Information (Note 5)
Part Number
DMG2305UXQ-7
DMG2305UXQ-13
Notes:
Compliance
Automotive
Automotive
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
~
~
Feb
2
DMG2305UXQ
Document number: DS38238 Rev. 1 - 2
Mar
3
YM
23X
23X = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
2016
D
Apr
4
May
5
2017
E
Jun
6
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2018
F
Jul
7
Aug
8
2019
G
Sep
9
Oct
O
2020
H
Nov
N
Dec
D
November 2016
© Diodes Incorporated
DMG2305UXQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
-20
±8
-4.2
-3.3
ID
A
-5.0
-4.0
-10
ID
Pulsed Drain Current (Note 7)
Units
V
V
IDM
A
A
Thermal Characteristics
Characteristic
Symbol
PD
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
t<10s
Thermal Resistance, Junction to Case (Note 8)
Operating and Storage Temperature Range
Electrical Characteristics
Value
1.4
90
64
33
-55 to +150
RθJA
RθJC
TJ, TSTG
Unit
W
°C/W
°C/W
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current (TJ = +25°C)
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20






-1.0
±100
V
µA
nA
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(TH)
-0.5
RDS(ON)

mΩ
|YFS|

-0.9
52
100
200

V
Static Drain-Source On-Resistance
—
40
52
68
9
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -4.2A
VGS = -2.5V, ID = -3.4A
VGS = -1.8V, ID = -2A
VDS = -5V, ID = -4A
CISS
COSS
CRSS
RG




808
85
77
15.2




pF
pF
pF
Ω
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF







10.2
1.3
2.2
10.8
13.7
79.3
34.7







nC
nC
nC
ns
ns
ns
ns
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 9)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
S
Test Condition
VDS = -15V, VGS = 0V
f = 1.0MHz
VGS = 0V, VDS = 0V, f = 1.0MHz
VGS = -4.5V, VDS = -4V,
ID = -3.5A
VDS = -4V, VGS = -4.5V,
RG = 6Ω, ID = -1A
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing
DMG2305UXQ
Document number: DS38238 Rev. 1 - 2
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DMG2305UXQ
20.0
18.0
VDS = -5.0V
VGS = -4.5V
TA = -55°C
TA = 25°C
TA = 150°C
VGS = -2.0V
16.0
VGS = -3.0V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
20
VGS = -8.0V
14.0
12.0
VGS = -2.5V
VGS = -1.8V
10.0
8.0
VGS = -1.5V
6.0
TA = 85°C
15
TA = 125°C
10
5
4.0
VGS = -1.2V
0
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.1
0.08
VGS = -2.5V
0.06
0.04
VGS = -4.5V
0.02
0
0
5
10
15
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
1.4
VGS = -4.5V
ID = -10A
1
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
DMG2305UXQ
Document number: DS38238 Rev. 1 - 2
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0.5
1
1.5
2
2.5
-V GS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
0.08
VGS = -4.5V
0.07
TA = 125°C
TA = 150°C
0.06
TA = 85°C
0.05
TA = 25°C
0.04
TA = -55°C
0.03
0.02
0.01
0
20
VGS = -2.5V
ID = -5.0A
1.2
0
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
0.0
RDS(on), DRAIN-SOURCE ON-RESISTANCE ()
2.0
0
5
10
15
-ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.1
0.09
0.08
VGS = -2.5V
ID = -5A
0.07
0.06
0.05
VGS = -4.5V
ID = -10A
0.04
0.03
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
November 2016
© Diodes Incorporated
DMG2305UXQ
20
18
16
1.2
-IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.5
0.9
-ID = 1mA
0.6
-ID = 250µA
0.3
14
12
10
8
TA= 25C
6
4
2
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
DMG2305UXQ
Document number: DS38238 Rev. 1 - 2
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0
0
0.3
0.6
0.9
1.2
1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
November 2016
© Diodes Incorporated
DMG2305UXQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
All 7°
H
K1
GAUGE PLANE
0.25
J
K
a
M
A
L
C
L1
B
D
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0°
8°
-All Dimensions in mm
G
F
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Y
C
Y1
X
DMG2305UXQ
Document number: DS38238 Rev. 1 - 2
Dimensions
C
X
X1
Y
Y1
Value (in mm)
2.0
0.8
1.35
0.9
2.9
X1
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DMG2305UXQ
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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Document number: DS38238 Rev. 1 - 2
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