RoHS MMST2222A MMST2222A SOT-323 TRANSISTOR (NPN) D T ,. L 1. BASE 2. EMITTER FEATURES 3. COLLECTOR 1. 25¡ À0. 05 W (Tamb=25℃) 2. 30¡ À0. 05 1. 30¡ À0. 03 Collector current ICM: 0.6 A Collector-base voltage 75 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO V(BR)EBO Collector cut-off current DC current gain E Collector-emitter saturation voltage J E Base-emitter saturation voltage MAX UNIT Ic= 10µA, IE=0 75 V Ic= 10mA, IB=0 40 V IE=10µA, IC=0 6 V O µA ICEO VCE=35V, IB=0 0. 1 µA IEBO VEB= 3V, IC=0 0. 1 µA hFE(1) VCE=10V, IC= 150mA 100 hFE(2) VCE=10V, IC= 1mA 50 VCE(sat) IC=500 mA, IB= 50mA 0.6 V VBE(sat) IC=500 mA, IB= 50mA 1.2 V Transition frequency fT Output Capacitance Cob W MIN 0. 1 C E L Emitter cut-off current N conditions VCB=70V, IE=0 ICBO Collector cut-off current Test R T Emitter-base breakdown voltage Unit: mm unless otherwise specified) Symbol Collector-base breakdown voltage IC C O 2. 00¡ À0. 05 0.2 0. 30 PCM: 1. 01 REF Power dissipation VCE=20V, IC= 20mA f=100MHz VCB=10V, IE= 0 f=1MHz 300 300 MHz 8 pF Delay time td VCC=30V, IC=150mA 10 nS Rise time tr VBE(off)=0.5V, IB1=15mA 25 nS Storage time tS VCC=30V, IC=150mA 225 nS Fall time tf IB1= IB2= 15mA 60 nS Marking K3P WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]