TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1006 AQ1006 Series Series AQ1006 Series 25pF 30kV Unidirectional Discrete TVS RoHS Pb GREEN Description Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 5A of 8/20µs surge current (IEC61000-4-5) with very low clamping voltages. Features Pinout Pin 1 Pin 2 • ESD, IEC61000-4-2, ±30kV contact, ±30kV air • Low leakage current of 0.5µA (MAX) at 5V • EFT, IEC61000-4-4, 40A (5/50ns) • Space efficient 0201 footprint) • Lightning, IEC61000-4-5 2nd edition, 5A (8/20µs) • AEC-Q101 qualified Applications Functional Block Diagram • Smart phones • Portable navigation devices • PDAs • Portable medical devices • Mobile phones 1 • Digital cameras Application Example Keypads I/O Controller 2 P1 P2 Outside World P3 IC P4 Case GND AQ1006(X4) SP1006 (x4) Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ©2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 04/07/16 SP1006 Series TVS Diode Arrays (SPA® Diodes) Series General Purpose ESD Protection - AQ1006 SP1006 Series Absolute Maximum Ratings Symbol Parameter Value Units 5 A Operating Temperature -40 to 125 °C Storage Temperature -55 to 150 °C IPP Peak Pulse Current (tp=8/20μs) TOP TSTOR CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units -55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 30s) 260 °C Storage Temperature Range Electrical Characteristics (TOP=25ºC) Parameter Symbol Reverse Standoff Voltage VRWM Test Conditions Min Typ Max Units 6.0 V Breakdown Voltage VBR IR=1mA (Pin 1 to 2) 7.8 V Forward Voltage Drop VF IR=1mA (Pin 2 to 1) 0.8 V VR=5V 0.1 Ipp=1A, tp=8/20µs (Pin 1 to 2) 8.3 Leakage Current ILEAK Clamp Voltage1 VC Dynamic Resistance RDYN ESD Withstand Voltage1 VESD Diode Capacitance1 0.5 μA V Ipp=2A, tp=8/20µs (Pin 1 to 2) 9.2 V (VC2 - VC1) / (IPP2 - IPP1) 0.9 Ω IEC61000-4-2 (Contact Discharge) ±30 IEC61000-4-2 (Air Discharge) ±30 CD kV kV Reverse Bias=0V 25 pF Reverse Bias=2.5V 15 pF Note: Parameter is guaranteed by design and/or device characterization. 1 Clamping Voltage vs. IPP Capacitance vs. Reverse Bias 16.0 30 14.0 Clamp Voltage (VC) 25 Capacitance (pF) 20 15 10 5 8.0 6.0 4.0 0.0 1.0 0.5 1.0 1.5 2.0 2.5 Bias Voltage (V) ©2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 04/07/16 10.0 2.0 0 0.0 12.0 3.0 3.5 4.0 4.5 1.5 2.0 2.5 3.0 3.5 4.0 5.0 Peak Pulse Current-IPP (A) SP1006 Series TVS Diode Arrays (SPA® Diodes) AQ1006Series Series General Purpose ESD Protection - SP1006 Soldering Parameters Pre Heat Pb – Free assembly - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max - Temperature (TL) (Liquidus) Reflow - Temperature (tL) tP TP 217°C Temperature Reflow Condition TL TS(max) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. tL Ramp-do Ramp-down Preheat TS(min) 60 – 150 seconds Peak Temperature (TP) Critical Zone TL to TP Ramp-up 25 tS time to peak temperature Time Product Characteristics Lead Plating Matte Tin Lead Material Copper Alloy Lead Coplanarity 0.004 inches(0.102mm) Substrate material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. Package Dimensions — μDFN-2 (0201) Package μDFN-2 (0201) JEDEC MO-236 Symbol TOP VIEW SIDE VIEW 0.32 Pin2 Pin1 0.14 BOTTOM VIEW 0.24 0.32 Inches Max A 0.23 0.33 0.009 0.013 A1 0.00 0.05 0.000 0.002 A2 0.24 Millimeters Min 0.10 REF Min Max 0.004 REF b 0.18 0.30 0.007 0.012 D 0.55 0.65 0.022 0.026 E 0.25 0.35 0.010 0.014 L1 0.12 0.24 0.005 0.009 L2 0.12 0.23 0.005 0.009 K1 0.165 REF 0.006 REF SOLDERING PATTERN ©2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 04/07/16 SP1006 Series TVS Diode Arrays (SPA® Diodes) AQ1006Series Series General Purpose ESD Protection - SP1006 Part Numbering System Part Marking System AQ 1006 – 01 U T G TVS Diode Arrays (SPA® Automotive Grade Diodes) Pin 2 G= Green T= Tape & Reel Series Stripe Package Number of Channels U: μDFN-2 Pin 1 Ordering Information Part Number Package Marking Min. Order Qty. AQ1006-01UTG μDFN-2 II 15000 Embossed Carrier Tape & Reel Specification — μDFN-2 P0 P1 P2 D0 Symbol E F W 0.20 ± 0.05 T 0º MAX A0 K0 ©2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 04/07/16 0º MAX B0 Millimetres Min Max Inches Min Max A0 0.33 0.40 0.013 0.016 B0 0.63 0.70 0.025 0.028 D0 1.40 1.60 0.055 0.063 E 1.65 1.85 0.065 0.073 0.140 F 3.45 3.55 0.136 K0 0.30 0.39 0.012 0.015 P0 1.90 2.10 0.075 0.083 P1 1.95 2.05 0.077 0.081 P2 3.90 4.10 0.154 0.161 T 0.13 0.25 0.005 0.010 W 7.90 8.30 0.311 0.327 SP1006 Series