SemiHow HCI70R700T Extremely low switching loss Datasheet

HCI70R700T
700V N-Channel Super Junction MOSFET
Features
Key Parameters
‰ Very Low FOM (RDS(on) X Qg)
‰ Extremely low switching loss
Parameter
Value
Unit
BVDSS @Tj,max
750
V
ID
6
A
RDS(on), max
0.7
ȍ
Qg, Typ
14
nC
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
Application
Package & Internal Circuit
‰ Switch Mode Power Supply (SMPS)
I2-PAK
‰ Uninterruptible Power Supply (UPS)
‰ Power Factor Correction (PFC)
‰ TV power & LED Lighting Power
G
D
Absolute Maximum Ratings
Symbol
S
TC=25୅ unless otherwise specified
Parameter
Value
Units
VDSS
Drain-Source Voltage
700
V
VGS
Gate-Source Voltage
ρ30
V
Drain Current
– Continuous (TC = 25୅)
6.0
A
Drain Current
– Continuous (TC = 100୅)
3.8
A
IDM
Drain Current
– Pulsed
(Note 1)
18
A
EAS
Single Pulsed Avalanche Energy
(Note 2)
155
mJ
PD
Power Dissipation (TC = 25୅)
50
W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
୅
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
୅
ID
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC
Junction-to-Case
--
2.5
RșJA
Junction-to-Ambient
--
62.5
Units
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͑͝͵ΖΔ͑ͣͦ͑͢͡
HCI70R700T Super Junction MOSFET
Dec 2015
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.0 A
--
0.64
0.7
Ÿ
VGS = 0 V, ID = 250 Ꮃ
700
--
--
V
VDS = 700 V, VGS = 0 V
--
--
10
Ꮃ
VDS = 560 V, TJ = 125୅
--
--
100
Ꮃ
VGS = ρ30 V, VDS = 0 V
--
--
ρ100
Ꮂ
--
590
770
Ꮔ
--
36
47
Ꮔ
--
6.5
8.5
Ꮔ
--
18
46
Ꭸ
--
20
50
Ꭸ
--
60
130
Ꭸ
--
22
54
Ꭸ
--
14.0
18.5
nC
--
3.2
--
nC
--
4.2
--
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 350 V, ID = 6 A,
RG = 25 Ÿ
VDS = 560 V, ID = 6 A
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
6
ISM
Pulsed Source-Drain Diode Forward Current
--
--
18
VSD
Source-Drain Diode Forward Voltage
IS = 6 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
300
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 6 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
2.4
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=3.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͑͝͵ΖΔ͑ͣͦ͑͢͡
HCI70R700T Super Junction MOSFET
Electrical Characteristics TJ=25 qC
20
20
ID, Drain Current [A]
15
ID, Drain Current [A]
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10
5
0
-55oC
15
25oC
10
150oC
5
* Notes :
1. 300us Pulse Test
2. TC = 25oC
* Notes :
1. VDS= 10V
2. 300us Pulse Test
0
0
5
10
15
20
2
25
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON) [:],
Drain-Source On-Resistance
2.4
2.0
1.6
VGS = 10V
1.2
0.8
VGS = 20V
0.4
10
1
150oC
25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
Note : TJ = 25oC
0.0
0
4
8
12
0.1
0.0
16
0.2
0.4
0.8
1.0
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
103
Ciss
102
Coss
Crss
101
100
0.1
* Note ;
1. VGS = 0 V
2. f = 1 MHz
VGS, Gate-Source Voltage [V]
12
104
Capacitances [pF]
0.6
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
VDS = 140V
VDS = 350V
10
VDS = 560V
8
6
4
2
Note : ID = 6A
0
1
10
100
0
3
6
9
12
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
15
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͑͝͵ΖΔ͑ͣͦ͑͢͡
HCI70R700T Super Junction MOSFET
Typical Characteristics
(continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250PA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 2.0 A
0.5
0.0
-100
200
-50
50
100
150
200
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
102
6
Operation in This Area
is Limited by R DS(on)
10 Ps
101
5
ID, Drain Current [A]
100 Ps
1 ms
10 ms
100 ms
DC
100
10-1
* Notes :
1. TC = 25 oC
4
3
2
1
2. TJ = 150 oC
3. Single Pulse
10-2
10-1
100
101
102
0
25
103
50
Figure 9. Maximum Safe Operating Area
100
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
ZTJC(t), Thermal Response
ID, Drain Current [A]
0
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
* Notes :
1. ZTJC(t) = 2.5 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.2
0.1
0.05
10-1
0.02
0.01
PDM
single pulse
t1
-2
10
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͑͝͵ΖΔ͑ͣͦ͑͢͡
HCI70R700T Super Junction MOSFET
Typical Characteristics
HCI70R700T Super Junction MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͑͝͵ΖΔ͑ͣͦ͑͢͡
HCI70R700T Super Junction MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͑͝͵ΖΔ͑ͣͦ͑͢͡
HCI70R700T Super Junction MOSFET
Package Dimension
pYTwhrG
O{vTY]YPG
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͣ͑͝͵ΖΔ͑ͣͦ͑͢͡