AOSMD AO6422 20v n-channel mosfet Datasheet

AO6422
20V N-Channel MOSFET
General Description
Product Summary
The AO6422 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for general purpose application.
VDS = 20V
ID = 5A
(VGS = 4.5V)
RDS(ON) < 44mΩ (VGS = 4.5V)
RDS(ON) < 55mΩ (VGS = 2.5V)
RDS(ON) < 72mΩ (VGS = 1.8V)
TSOP6
Top View
D
Bottom View
Top View
D
1
6
D
D
2
5
D
G
3
4
S
G
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Drain-Source Voltage
VDS
20
Units
V
Gate-Source Voltage
±8
V
Continuous Drain
Current A
VGS
TA=25°C
5
TA=70°C
ID
Pulsed Drain Current B
Power Dissipation A
3.9
4.2
3
IDM
TA=25°C
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
Alpha & Omega Semiconductor, Ltd.
A
30
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady State
RθJA
RθJL
2.0
1.1
1.3
0.7
-55 to 150
Typ
47.5
74
54
Max
62.5
110
68
W
°C
Units
°C/W
°C/W
°C/W
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AO6422
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = 250µA, VGS = 0V
Typ
20
1
TJ = 55°C
5
±100
nA
1
V
35
44
48
60
VGS = 2.5V, ID = 4.5A
43
55
mΩ
72
mΩ
Gate-Body leakage current
VDS = 0V, VGS = ±8V
Gate Threshold Voltage
VDS = VGS ID = 250µA
0.4
ID(ON)
On state drain current
VGS = 4.5V, VDS = 5V
30
VGS = 4.5V, ID = 5.0A
TJ=125°C
A
RDS(ON)
Static Drain-Source On-Resistance
VGS = 1.8V, ID = 3.5A
55
gFS
Forward Transconductance
VDS = 5V, ID = 5.0A
14
VSD
Diode Forward Voltage
IS = 1A,VGS = 0V
0.8
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
0.65
IGSS
Output Capacitance
Units
V
VDS = 20V, VGS = 0V
VGS(th)
Coss
Max
450
mΩ
S
1
V
2
A
560
pF
VGS=0V, VDS=10V, f=1MHz
74
VGS=0V, VDS=0V, f=1MHz
4.9
7.5
Ω
6.2
8.2
nC
pF
52
SWITCHING PARAMETERS
Qg (4.5V) Total Gate Charge
VGS= 4.5V, VDS= 10V, ID= 5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=5A, dI/dt=100A/µs
13
Qrr
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
3.3
VGS=4.5V, VDS=10V, RL=2Ω,
RGEN=3Ω
pF
0.4
nC
1.3
nC
4.5
ns
6
ns
33
ns
7.1
ns
17
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in
any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2: Feb. 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO6422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
30
4.5V
VDS= 5V
3V
2.5V
25
8
20
6
ID(A)
ID (A)
2V
15
4
10
VGS=1.5V
2
5
125°C
0
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
70
Normalized On-Resistance
1.6
VGS= 1.8V
62
RDS(ON) (mΩ
Ω)
25°C
0
54
46
VGS= 2.5V
38
VGS= 4.5V
30
0
3
1.2
1.0
0.8
I9F=-6.5A,12
dI/dt=100A/µs
15
6
VGS= 4.5V
ID= 5A
1.4
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
120
1E+01
ID= 5.0A
1E+00
100
1E-02
IS (A)
RDS(ON) (mΩ
Ω)
1E-01
80
125°C
60
125°C
1E-03
25°C
1E-04
40
25°C
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
20
1
2
3
4
5
6
1E-05
7
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO6422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
VDS= 10V
ID= 5A
Capacitance (pF)
VGS (Volts)
4
3
2
600
Ciss
400
200
1
0
Coss
Crss
0
0
1
2
3
4
5
6
7
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
10µs
100µs
Power (W)
ID (Amps)
15
1000
100
10
10
VDS (Volts)
Figure 8: Capacitance Characteristics
1ms
1
10ms
100mss
10s
0.1
TJ(Max)=150°C
TA=25°C
10
DC
0.01
0.1
100
IF=-6.5A, dI/dt=100A/µs
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
100
1000
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