AO6422 20V N-Channel MOSFET General Description Product Summary The AO6422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application. VDS = 20V ID = 5A (VGS = 4.5V) RDS(ON) < 44mΩ (VGS = 4.5V) RDS(ON) < 55mΩ (VGS = 2.5V) RDS(ON) < 72mΩ (VGS = 1.8V) TSOP6 Top View D Bottom View Top View D 1 6 D D 2 5 D G 3 4 S G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS 20 Units V Gate-Source Voltage ±8 V Continuous Drain Current A VGS TA=25°C 5 TA=70°C ID Pulsed Drain Current B Power Dissipation A 3.9 4.2 3 IDM TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Lead C TJ, TSTG Symbol t ≤ 10s Steady State Steady State Alpha & Omega Semiconductor, Ltd. A 30 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Steady State RθJA RθJL 2.0 1.1 1.3 0.7 -55 to 150 Typ 47.5 74 54 Max 62.5 110 68 W °C Units °C/W °C/W °C/W www.aosmd.com AO6422 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = 250µA, VGS = 0V Typ 20 1 TJ = 55°C 5 ±100 nA 1 V 35 44 48 60 VGS = 2.5V, ID = 4.5A 43 55 mΩ 72 mΩ Gate-Body leakage current VDS = 0V, VGS = ±8V Gate Threshold Voltage VDS = VGS ID = 250µA 0.4 ID(ON) On state drain current VGS = 4.5V, VDS = 5V 30 VGS = 4.5V, ID = 5.0A TJ=125°C A RDS(ON) Static Drain-Source On-Resistance VGS = 1.8V, ID = 3.5A 55 gFS Forward Transconductance VDS = 5V, ID = 5.0A 14 VSD Diode Forward Voltage IS = 1A,VGS = 0V 0.8 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 0.65 IGSS Output Capacitance Units V VDS = 20V, VGS = 0V VGS(th) Coss Max 450 mΩ S 1 V 2 A 560 pF VGS=0V, VDS=10V, f=1MHz 74 VGS=0V, VDS=0V, f=1MHz 4.9 7.5 Ω 6.2 8.2 nC pF 52 SWITCHING PARAMETERS Qg (4.5V) Total Gate Charge VGS= 4.5V, VDS= 10V, ID= 5A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs 13 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 3.3 VGS=4.5V, VDS=10V, RL=2Ω, RGEN=3Ω pF 0.4 nC 1.3 nC 4.5 ns 6 ns 33 ns 7.1 ns 17 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev2: Feb. 2012 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 30 4.5V VDS= 5V 3V 2.5V 25 8 20 6 ID(A) ID (A) 2V 15 4 10 VGS=1.5V 2 5 125°C 0 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 70 Normalized On-Resistance 1.6 VGS= 1.8V 62 RDS(ON) (mΩ Ω) 25°C 0 54 46 VGS= 2.5V 38 VGS= 4.5V 30 0 3 1.2 1.0 0.8 I9F=-6.5A,12 dI/dt=100A/µs 15 6 VGS= 4.5V ID= 5A 1.4 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 120 1E+01 ID= 5.0A 1E+00 100 1E-02 IS (A) RDS(ON) (mΩ Ω) 1E-01 80 125°C 60 125°C 1E-03 25°C 1E-04 40 25°C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 1 2 3 4 5 6 1E-05 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO6422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS= 10V ID= 5A Capacitance (pF) VGS (Volts) 4 3 2 600 Ciss 400 200 1 0 Coss Crss 0 0 1 2 3 4 5 6 7 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 TJ(Max)=150°C TA=25°C RDS(ON) limited 10µs 100µs Power (W) ID (Amps) 15 1000 100 10 10 VDS (Volts) Figure 8: Capacitance Characteristics 1ms 1 10ms 100mss 10s 0.1 TJ(Max)=150°C TA=25°C 10 DC 0.01 0.1 100 IF=-6.5A, dI/dt=100A/µs 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. 100 1000 www.aosmd.com