Infineon BSC030P03NS3G Optimos p3 power-transistor Datasheet

BSC030P03NS3 G
OptiMOSTM P3 Power-Transistor
Product Summary
Features
• single P-Channel in SuperSO8
• Qualified according JEDEC 1) for target applications
V DS
-30
V
R DS(on),max
3.0
mΩ
ID
-100
• V GS=25 V, specially suited for notebook applications
A
PG-TDSON-8
• Pb-free; RoHS compliant
• ESD > 4 kV
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21
Type
Package
BSC030P03NS3 G PG-TDSON-8
Marking
Lead free
Halogen free
030P3NS
Yes
Yes
Packing
dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
-100
T C=70 °C
-100
T A=25 °C
-25.4
Unit
A
Pulsed drain current
I D,pulse
T C=25 °C3)
-200
Avalanche energy, single pulse
E AS
I D=-100 A, R GS=25 Ω
345
mJ
Gate source voltage
V GS
±25
V
Power dissipation
P tot
T C =25 °C
125
W
T A=25 °C2)
2.5
Operating and storage temperature
ESD class
T j, T stg
-55 ... 150
JESD22-A114 HBM
55/150/56
IEC climatic category; DIN IEC 68-1
Rev. 2.1
class 3 (> 4KV)
260 °C
Soldering temperature
1)
°C
J-STD20 and JESD22
page 1
2009-11-16
BSC030P03NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.0
-
-
50
-30
-
-
Thermal characteristics
Thermal resistance,
junction - case
R thJC
Thermal resistance,
junction - ambient
R thJA
6 cm2 cooling area2)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250µA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=-345 µA
-3.1
-2.5
-1.9
Zero gate voltage drain current
I DSS
V DS=-30 V, V GS=0 V,
T j=25 °C
-
-
-1
V DS=-30 V, V GS=0 V,
T j=125 °C
-
-
-10
V
µA
Gate-source leakage current
I GSS
V GS=-25 V, V DS=0 V
-
-
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-6 V, I D=-50 A
-
3.0
4.6
mΩ
V GS=-10 V, I D=-50 A
-
2.3
3.0
-
3.1
-
Ω
47
93
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=-30 A
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
Rev. 2.1
See Fig. 3
page 2
2009-11-16
BSC030P03NS3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
10500
14000 pF
-
4690
6240
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
350
520
Turn-on delay time
t d(on)
-
27
41
Rise time
tr
-
105
158
Turn-off delay time
t d(off)
-
98
147
Fall time
tf
-
33
50
Gate to source charge
Q gs
-
42
56
Gate charge at threshold
Q g(th)
-
17
22
Gate to drain charge
Q gd
-
19
28
Switching charge
Q sw
-
44
62
Gate charge total
Qg
-
140
186
Gate plateau voltage
V plateau
-
4.1
-
Output charge
Q oss
-
108
144
-
-
100
-
-
200
V GS=0 V, V DS=-15 V,
f =1 MHz
V DD=-15 V, V GS=10 V, I D=-50 A,
R G=6 Ω
ns
Gate Charge Characteristics 3)
V DD=-15 V, I D=-50 A,
V GS=0 to -10 V
V DD=-15 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=-50 A,
T j=25 °C
-
-
-1.1
V
Reverse recovery time
t rr
V R=15 V, I F=|I S|,
di F/dt =100 A/µs
-
65
90
ns
Reverse recovery charge
Q rr
-
86
111
nC
Rev. 2.1
T C=25 °C
page 3
A
2009-11-16
BSC030P03NS3 G
1 Power dissipation
2 Drain current
P tot=f(T C); t p≤10 s
I D=f(T C); |V GS|≥10 V; t p≤10 s
130
110
120
100
110
90
100
80
90
70
P tot [W]
80
60
-I D [A]
70
60
50
50
40
40
30
30
20
20
10
10
0
0
0
40
80
120
160
0
40
80
T C [°C]
120
160
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C1); D =0
Z thJS=f(t p)
parameter: t p
parameter: D =t p/T
1000
101
10
100
1
10 µs
102
100
100 µs
1 ms
10
10 ms
Z thJS [K/W]
limited by on-state
resistance
-I D [A]
101
DC
10
0
0.5
0.2
1
10-1
0.1
0.1
0.05
10-1
0.02
0.1
0.01
single pulse
10-2
0.1
10
Rev. 2.1
10-2
0.01
1
-1
10
10
0
-V DS [V]
10
100
1
10
2
page 4
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10-5
10-4
10-3
10-2
10-1
100
t p [s]
10
101
2009-11-16
BSC030P03NS3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
200
6
-10 V
--5.0 V
175
-6.0V
-4.5V
150
4
-4.5 V
100
-5.0 V
R DS(on) [mΩ]
-I D [A]
125
75
-6.0 V
-8.0 V
-10 V
2
50
25
0
0
1
2
0
3
0
-V DS [V]
10
20
30
40
50
80
100
-I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
160
140
150
120
g fs [S]
-I D [A]
100
100
80
60
150 °C
50
40
25 °C
20
0
0
0
1
2
3
4
5
6
Rev. 2.1
0
20
40
60
-I D [A]
-V GS [V]
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2009-11-16
BSC030P03NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-50 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-345 µA
5
4
3.5
4
max.
3
typ.
2.5
-V GS(th) [V]
R DS(on) [mΩ]
98 %
3
typ.
2
2
min.
1.5
1
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
1000
104
100
Ciss
25 °C, typ
I F [A]
C [pF]
Coss
103
150 °C, typ
10
150 °C, 98%
Crss
102
1
25 °C, 98%
0.1
0
5
10
15
20
25
30
Rev. 2.1
0
0.5
1
1.5
2
-V SD [V]
-V DS [V]
page 6
2009-11-16
BSC030P03NS3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=-50 A pulsed
parameter: T j(start)
parameter: V DD
10
2
10
9
-15 V
25 °C
8
-6 V
-I AV [A]
100 °C
-24 V
7
125 °C
-V GS [V]
6
101
5
4
3
2
1
0
0
100
100
10
1
t AV [µs]
10
2
10
15 Drain-source breakdown voltage
20
40
60
80
100
120
140
-Q gate [nC]
3
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=-250 µA
36
V GS
Qg
-V BR(DSS) [V]
34
32
V g s(th)
30
28
Q g(th)
Q sw
Q gs
26
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.1
page 7
2009-11-16
BSC030P03NS3 G
Package Outline
PG-TDSON-8
Dimensions in mm
Rev. 2.1
page 8
2009-11-16
BSC030P03NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 9
2009-11-16
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