BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1) for target applications V DS -30 V R DS(on),max 3.0 mΩ ID -100 • V GS=25 V, specially suited for notebook applications A PG-TDSON-8 • Pb-free; RoHS compliant • ESD > 4 kV • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 Type Package BSC030P03NS3 G PG-TDSON-8 Marking Lead free Halogen free 030P3NS Yes Yes Packing dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C -100 T C=70 °C -100 T A=25 °C -25.4 Unit A Pulsed drain current I D,pulse T C=25 °C3) -200 Avalanche energy, single pulse E AS I D=-100 A, R GS=25 Ω 345 mJ Gate source voltage V GS ±25 V Power dissipation P tot T C =25 °C 125 W T A=25 °C2) 2.5 Operating and storage temperature ESD class T j, T stg -55 ... 150 JESD22-A114 HBM 55/150/56 IEC climatic category; DIN IEC 68-1 Rev. 2.1 class 3 (> 4KV) 260 °C Soldering temperature 1) °C J-STD20 and JESD22 page 1 2009-11-16 BSC030P03NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.0 - - 50 -30 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA 6 cm2 cooling area2) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250µA Gate threshold voltage V GS(th) V DS=V GS, I D=-345 µA -3.1 -2.5 -1.9 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, T j=25 °C - - -1 V DS=-30 V, V GS=0 V, T j=125 °C - - -10 V µA Gate-source leakage current I GSS V GS=-25 V, V DS=0 V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-6 V, I D=-50 A - 3.0 4.6 mΩ V GS=-10 V, I D=-50 A - 2.3 3.0 - 3.1 - Ω 47 93 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-30 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 2.1 See Fig. 3 page 2 2009-11-16 BSC030P03NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 10500 14000 pF - 4690 6240 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 350 520 Turn-on delay time t d(on) - 27 41 Rise time tr - 105 158 Turn-off delay time t d(off) - 98 147 Fall time tf - 33 50 Gate to source charge Q gs - 42 56 Gate charge at threshold Q g(th) - 17 22 Gate to drain charge Q gd - 19 28 Switching charge Q sw - 44 62 Gate charge total Qg - 140 186 Gate plateau voltage V plateau - 4.1 - Output charge Q oss - 108 144 - - 100 - - 200 V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15 V, V GS=10 V, I D=-50 A, R G=6 Ω ns Gate Charge Characteristics 3) V DD=-15 V, I D=-50 A, V GS=0 to -10 V V DD=-15 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=-50 A, T j=25 °C - - -1.1 V Reverse recovery time t rr V R=15 V, I F=|I S|, di F/dt =100 A/µs - 65 90 ns Reverse recovery charge Q rr - 86 111 nC Rev. 2.1 T C=25 °C page 3 A 2009-11-16 BSC030P03NS3 G 1 Power dissipation 2 Drain current P tot=f(T C); t p≤10 s I D=f(T C); |V GS|≥10 V; t p≤10 s 130 110 120 100 110 90 100 80 90 70 P tot [W] 80 60 -I D [A] 70 60 50 50 40 40 30 30 20 20 10 10 0 0 0 40 80 120 160 0 40 80 T C [°C] 120 160 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 1000 101 10 100 1 10 µs 102 100 100 µs 1 ms 10 10 ms Z thJS [K/W] limited by on-state resistance -I D [A] 101 DC 10 0 0.5 0.2 1 10-1 0.1 0.1 0.05 10-1 0.02 0.1 0.01 single pulse 10-2 0.1 10 Rev. 2.1 10-2 0.01 1 -1 10 10 0 -V DS [V] 10 100 1 10 2 page 4 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10-5 10-4 10-3 10-2 10-1 100 t p [s] 10 101 2009-11-16 BSC030P03NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 200 6 -10 V --5.0 V 175 -6.0V -4.5V 150 4 -4.5 V 100 -5.0 V R DS(on) [mΩ] -I D [A] 125 75 -6.0 V -8.0 V -10 V 2 50 25 0 0 1 2 0 3 0 -V DS [V] 10 20 30 40 50 80 100 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 200 160 140 150 120 g fs [S] -I D [A] 100 100 80 60 150 °C 50 40 25 °C 20 0 0 0 1 2 3 4 5 6 Rev. 2.1 0 20 40 60 -I D [A] -V GS [V] page 5 2009-11-16 BSC030P03NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-50 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-345 µA 5 4 3.5 4 max. 3 typ. 2.5 -V GS(th) [V] R DS(on) [mΩ] 98 % 3 typ. 2 2 min. 1.5 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 T j [°C] 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 1000 104 100 Ciss 25 °C, typ I F [A] C [pF] Coss 103 150 °C, typ 10 150 °C, 98% Crss 102 1 25 °C, 98% 0.1 0 5 10 15 20 25 30 Rev. 2.1 0 0.5 1 1.5 2 -V SD [V] -V DS [V] page 6 2009-11-16 BSC030P03NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-50 A pulsed parameter: T j(start) parameter: V DD 10 2 10 9 -15 V 25 °C 8 -6 V -I AV [A] 100 °C -24 V 7 125 °C -V GS [V] 6 101 5 4 3 2 1 0 0 100 100 10 1 t AV [µs] 10 2 10 15 Drain-source breakdown voltage 20 40 60 80 100 120 140 -Q gate [nC] 3 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA 36 V GS Qg -V BR(DSS) [V] 34 32 V g s(th) 30 28 Q g(th) Q sw Q gs 26 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.1 page 7 2009-11-16 BSC030P03NS3 G Package Outline PG-TDSON-8 Dimensions in mm Rev. 2.1 page 8 2009-11-16 BSC030P03NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 9 2009-11-16