EIC FBR5006 Fast recovery bridge rectifier Datasheet

FBR5000 - FBR5010
FAST RECOVERY
BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 50 Amperes
BR50
FEATURES :
*
*
*
*
*
*
0.728(18.50)
0.688(17.40)
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.570(14.50)
0.530(13.40)
MECHANICAL DATA :
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
FBR
5000
FBR
5001
FBR
5002
FBR
5004
FBR
5006
FBR
5008
FBR
5010
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
Maximum Average Forward Current Tc = 55 °C
IF(AV)
50
Amps.
IFSM
400
Amps.
2
It
664
AS
VF
1.3
Volts
IR
10
µA
RATING
Volts
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at I F = 25 Amps.
Maximum DC Reverse Current
Ta = 25 °C
Ta = 100 °C
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
IR(H)
Typical Thermal Resistance per diode (Note 2)
RθJC
1
TJ
- 50 to + 150
TSTG
- 50 to + 150
Operating Junction Temperature Range
Storage Temperature Range
Trr
2
1.0
200
mA
300
500
ns
°C/W
°C
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.
UPDATE : NOVEMBER 1, 1998
RATING AND CHARACTERISTIC CURVES ( FBR5000 - FBR5010 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5 A
D.U.T.
+
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
1Ω
- 0.25
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 50/200 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1 cm
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
500
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
50
40
30
20
10
Tc = 55 °C
400
300
200
100
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
0
175
1
CASE TEMPERATURE, ( °C)
2
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
6
10
20
40
60
REVERSE CURRENT, MICROAMPERES
PER DIODE
100
10
1.0
Pulse Width = 300 µs
2% Duty Cycle
0.1
TJ = 25 °C
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
100
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
FORWARD CURRENT, AMPERES
4
NUMBER OF CYCLES AT 60Hz
1.0
1.2
1.4
1.6
FORWARD VOLTAGE, VOLTS
1.8
2.0
140
Similar pages