SEMICONDUCTORS APT6030BN N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS TRANSISTORS FEATURE N channel in a plastic TO-3PML package. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VDS IDS IDM VGS RDS(on) PT tJ tstg Ratings Drain-Source Voltage Continuous Drain Current TC= 37°C Pulsed Drain Current TC= 25°C Gate-Source Voltage Drain-Source on Resistance Total Power Dissipation @ TC= 25°C Linear Derating Factor Operating Temperature Storage Temperature range Value Unit 600 23 92 30 0.30 360 2.9 -55 to +150 -55 to +150 V A V Ω W W/°C °C THERMAL CHARACTERISTICS Symbol Ratings RthJC Thermal Resistance, junction-case RthJA Thermal Resistance, junction-ambient 22/10/2012 COMSET SEMICONDUCTORS Value 0.34 40 Unit °C/W 1/4 SEMICONDUCTORS APT6030BN ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VGS(th) Drain-Source Breakdown Voltage Gate-threshold Voltage IDSS Zero Gate Voltage Drain Current VDSS IGSS Gate-Source leakage Current ID(on) On State Drain Current RDS(on) Drain-Source on Resistance Typ Max Unit 600 - - V ID=1 mA, VDS= VGS VDS= 600 V, VGS= 0 V Tj= 25 °C VDS= 0.8 VDSS, VGS= 0 V Tj= 125 °C VGS= 30 V, VDS= 0 V VGS= 30 V VDS >ID(on)xRDS(on)Max 0.5ID(Cont), VGS= 10 V 2 - 4 V - - 250 µA - - 1 mA - - 100 nA - - 23 A - - 0.3 Ω Test Condition(s) Min Typ Max Unit - 2905 505 190 20 35 90 50 140 18 75 3500 710 285 40 70 130 100 210 27 110 ID= 250 µA, VGS= 0 V Min DYNAMIC CHARACTERISTICS Symbol CISS COSS CRSS td(on) tr td(off) tf Qg Qgs Qgd Ratings Input Capacitance Output Capacitance Reverse transfer Capacitance Turn-on Delay Time Rise time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate-Drain Charge 22/10/2012 VGS= 0 V, VDS= 25 V f= 1MHz VDD= 300 V, VGS= 15 V IDS= ID(Cont) @ 25°C RGS= 1.8 Ω VDD= 300 V, VGS= 10 V IDS= ID(Cont) @ 25°C COMSET SEMICONDUCTORS 2/4 pF ns nC SEMICONDUCTORS APT6030BN REVERSE DIODE Symbol IS ISM VSD Trr Qrr Ratings Test Condition(s) Continuous Source Current. (Body Diode) Pulsed Source Current. (Body Diode) Diode Forward Voltage VGS = 0 V, Is = -ID(Cont) Reverse Recovery Time Is = -ID(Cont) di/dt = 100 A/µs Reverse Recovery Charge Min Typ Max Unit - 480 23 92 1.3 960 V ns - 8 16 µC Min Typ Max Unit A SAFE OPERATING AREA CHARACTERISTICS Symbol Ratings Test Condition(s) VDS= 0.4VDSS IDS= PD/0.4VDSS t= 1 sec IDS= ID(Cont) VDS= PD/ ID(Cont) t= 1 sec SOA1 Safe Operating Area SOA2 Safe Operating Area ILM Inductive Current Clamped 22/10/2012 COMSET SEMICONDUCTORS 360 W 360 W 92 A 3/4 SEMICONDUCTORS APT6030BN MECHANICAL DATA CASE TO-3PML 1 Pin 1 : Pin 2 : Pin 3 : 2 3 Gate Drain Source Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Dimensions are for reference only and may slightly vary. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 22/10/2012 [email protected] COMSET SEMICONDUCTORS 4/4