HMC634LC4 v02.1109 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Typical Applications Features The HMC634LC4 is ideal for: Gain: 21 dB • Point-to-Point Radios P1dB: +22 dBm • Point-to-Multi-Point Radios & VSAT Saturated Power: +23 dBm @ 17% PAE • LO Driver for Mixers Single Supply Voltage: +5V @180 mA • Military & Space 50 Ohm Matched Input/Output 24 Lead 4x4mm SMT Package: 16mm2 Functional Diagram General Description The HMC634LC4 is a GaAs PHEMT MMIC Driver Amplifier in a leadless 4 x 4 mm ceramic surface mount package which operates between 5 and 20 GHz The amplifier provides up to 21 dB of gain, +29 dBm Output IP3, and +22 dBm of output power at 1 dB gain compression, while requiring 180 mA from a +5V supply. The HMC634LC4 is an ideal driver amplifier for microwave radio applications from 5 to 20 GHz, and may be biased at +5V, 130 mA to provide lower gain with optimized PAE. The amplifier’s I/Os are DC blocked and matched to 50 Ohms with no external matching required. Electrical Specifi cations, TA = +25° C, Vdd1-4= 5V, Idd= 180 mA [1] Parameter Min. Frequency Range Gain 18 Gain Variation Over Temperature Max. Min. 17 0.035 22 16 dB 0.030 dB/ °C dB 13 dB 20 dBm Saturated Output Power (Psat) 23 20.5 dBm Output Third Order Intercept (IP3) 29 28 dBm Noise Figure 7.5 7.5 dB Supply Current (Idd) (Idd = Idd1 + Idd2 + Idd3 + Idd4) 180 180 mA [1] Adjust Vgg between -2 to 0V to achieve Idd= 180 mA Typical. 9 - 162 Units GHz 14 14 19 Max. 20 0.020 18 Output Return Loss Typ. 16 - 20 21 0.025 Input Return Loss Output Power for 1 dB Compression (P1dB) Typ. 5 - 16 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC634LC4 v02.1109 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Gain vs. Temperature 30 20 25 10 9 20 S11 S21 S22 0 15 -10 10 -20 5 -30 +25 C +85 C -40 C 0 2 4 6 8 10 12 14 16 18 20 22 24 2 4 6 8 FREQUENCY (GHz) Input Return Loss vs. Temperature 14 16 18 20 22 24 0 -5 -5 +25 C -40 C +85 C -10 RETURN LOSS (dB) RETURN LOSS (dB) 12 Output Return Loss vs. Temperature 0 -15 -20 -25 -10 -15 -20 +25 C +85 C -40 C -25 -30 -30 2 4 6 8 10 12 14 16 18 20 22 24 2 4 6 8 FREQUENCY (GHz) 10 12 14 16 18 20 22 24 FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 30 30 28 28 +25 C +85 C -40 C 26 Psat (dBm) 26 P1dB (dBm) 10 FREQUENCY (GHz) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 30 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 24 22 24 22 20 20 18 18 16 +25 C +85 C -40 C 16 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 163 HMC634LC4 v02.1109 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Power Compression @ 20 GHz Power Compression @ 12.5 GHz 25 20 15 10 Pout (dBm) Gain (dB) PAE (%) 5 -8 -6 -4 -2 0 2 4 Pout (dBm) Gain (dB) PAE (%) 25 20 15 10 5 0 -10 6 -8 -6 INPUT POWER (dBm) -4 0 2 4 6 Noise Figure vs. Temperature 16 36 NOISE FIGURE (dB) 32 IP3 (dBm) -2 INPUT POWER (dBm) Output IP3 vs. Temperature 28 24 +25 C +85 C -40 C +25 C +85 C -40 C 12 8 4 20 16 0 2 4 6 8 10 12 14 16 18 6 20 8 10 FREQUENCY (GHz) 12 14 16 18 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 12.5 GHz Reverse Isolation vs. Temperature 25 0 -10 Gain P1dB Psat -20 ISOLATION (dB) 24 23 22 +25 C +85 C -40 C -30 -40 -50 -60 21 -70 20 4.5 -80 4.7 4.9 5.1 Vdd (V) 9 - 164 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 30 0 -10 GAIN (dB), P1dB (dBm), Psat (dBm) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 30 5.3 5.5 2 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 22 24 HMC634LC4 v02.1109 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3, Vdd4) +5.5 Vdc Gate Bias Voltage (Vgg) -3 to 0 Vdc Idd 180 30 150 25 20 Gain P1dB Psat IP3 90 15 -0.88 120 -0.84 -0.8 -0.76 RF Input Power (RFIN)(Vdd = +5 Vdc) +10 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 11.17 mW/°C above 85 °C) 1W Thermal Resistance (channel to package bottom) 89.46 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C -0.72 Vgg (V) Typical Supply Current vs. Vdd Vdd (V) Idd (mA) 4.5 177 5.0 180 5.5 183 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Note: Amplifi er will operate over full voltage ranges shown above Outline Drawing 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT 210 35 Idd (mA) GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) Gain, Power & Output IP3 vs. Gate Voltage @ 12.5 GHz NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 165 HMC634LC4 v02.1109 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Pin Descriptions DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 9 - 166 Pin Number Function Description 1, 5 - 8, 10 - 14, 18, 21, 23 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 2, 4, 15, 17 GND Package Bottom must be connected to RF/DC ground. 3 RFIN This pin is AC coupled and matched to 50 Ohms. 9 Vgg Gate control for amplifier, please follow “MMIC Amplifier Biasing Procedure” Application Note: See application circuit for required external components. 16 RFOUT This pin is AC coupled and matched to 50 Ohms. 24, 22, 20, 19 Vdd1, Vdd2, Vdd3, Vdd4 Power Supply Voltage for the amplifier. See application circuit for required external components. Interface Schematic Application Circuit Component Value C1 - C5 100 pF C6 - C10 1000 pF C11 - C15 2.2 μF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC634LC4 v02.1109 GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 20 GHz Evaluation PCB List of Materials for Evaluation PCB 115857 [1] Item Description J1 - J2 2.92 mm PC Mount K-Connector VD1 - VD4 DC Pin C1 - C5 100 pF Capacitor, 0402 Pkg. C6 - C10 1000 pF Capacitor, 0603 Pkg. C11 - C15 2.2 μF Capacitor, Tantalum U1 HMC634LC4 Driver Amplifier PCB [2] 115855 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 9 - 167