ECH8602M Ordering number : ENA1562A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8602M General-Purpose Switching Device Applications Features • • • 2.5V drive Common-drain type Protection diode in • • Best suited for LiB charging and discharging switch Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 30 ID IDP Drain Current (Pulse) Allowable Power Dissipation V ±12 V 6 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.4 W Total Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7011A-003 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8602M-TL-H Top View Packing Type : TL Marking 0.25 2.9 0.15 8 TZ 5 2.3 Electrical Connection 4 1 0.65 0.9 0.25 Lot No. TL 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 71112 TKIM/21710PE TKIM TC-00002221 No. A1562-1/7 ECH8602M Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Turn-ON Delay Time Turn-OFF Delay Time typ Unit max ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA RDS(on)1 ID=3A, VGS=4.5V 15.4 22 30 mΩ RDS(on)2 ID=3A, VGS=4.0V 16.1 23 31 mΩ RDS(on)3 ID=1.5A, VGS=2.5V 18 30 44 mΩ td(off) tf Fall Time Ratings min V(BR)DSS IDSS td(on) tr Rise Time Conditions Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 30 V 0.5 VDS=10V, ID=3A 1 μA ±10 μA 1.3 5 See specified Test Circuit. V S 305 ns 490 ns 3500 ns 1200 ns 7.5 nC VDS=15V, VGS=4.5V, ID=6A 1.7 nC IS=6A, VGS=0V 0.8 1.6 nC 1.2 V Switching Time Test Circuit 4.5V 0V VDD=15V VIN ID=3A RL=5Ω VIN D PW=10μs D.C.≤1% VOUT Rg G ECH8602M P.G 50Ω S Rg=1kΩ Ordering Information Device ECH8602M-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1562-2/7 ECH8602M ID -- VDS 3.0 2.5 2.0 1.5 5 4 3 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V IT15055 RDS(on) -- VGS IT15048 RDS(on) -- Ta 70 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID=1.5A 50 3A 40 30 20 10 0 2 4 6 8 10 Gate-to-Source Voltage, VGS -- V | yfs | -- ID 2 Source Current, IS -- A °C -25 °C = 75 Ta 25 °C 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 7 5 5 7 10 2 IT15051 3 2 tf 1000 7 tr td(on) 5 3 2 100 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 --40 --20 2 0 3 IT15053 20 40 60 80 100 120 140 160 IT15310 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Diode Forward Voltage, VSD -- V 1.1 IT15052 VGS -- Qg 4.5 VDD=15V VGS=4.5V td(off) 10 0.01 7 5 3 2 0.001 0.1 Gate-to-Source Voltage, VGS -- V 0.1 0.01 20 3 2 5 7 30 Ambient Temperature, Ta -- °C 7 1.0 A =1.5 , ID V 5 =2. =3A VGS , ID 4.0V = =3A VGS V, I D 5 . 4 = VGS 40 IT15309 10 2 50 0 --60 12 VDS=10V 3 60 Ta= 75° C 25° C --25 °C 60 0 25 ° C 1 0 70 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 6 0.5 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S 7 2 1.0 Switching Time, SW Time -- ns 8 --25° C 3.5 9 Ta= 75°C 4.0 ID -- VGS VDS=10V 10 VGS=1.5V Drain Current, ID -- A 4.5 11 10.0V Drain Current, ID -- A 5.0 12 2.0V 5.5 2.5V 4.5V 4 .0V 6.0 VDS=15V ID=6A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 Total Gate Charge, Qg -- nC 7 8 IT15311 No. A1562-3/7 ECH8602M ASO 2 10 7 5 3 2 1.0 7 5 3 2 IDP=60A PW≤10μs 10 0μ s ID=6A 10 DC Operation in this area is limited by RDS(on). 0.1 7 5 Ta=25°C 3 2 Single pulse When mounted on 0.01 0.01 2 3 5 7 0.1 Allowable Power Dissipation, PD -- W Drain Current, ID -- A 100 7 5 3 2 1m s 10 ms 0m s op era tio n ceramic substrate (900mm2×0.8mm) 2 3 5 7 1.0 PD -- Ta 1.8 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT15058 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.2 To t al 1.0 0.8 Di ss 1u nit ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT5059 No. A1562-4/7 ECH8602M Embossed Taping Specification ECH8602M-TL-H No. A1562-5/7 ECH8602M Outline Drawing ECH8602M-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1562-6/7 ECH8602M Note on usage : Since the ECH8602M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2012. Specifications and information herein are subject to change without notice. PS No. A1562-7/7