RoHS DAP222 DAP222 D T ,. L 1.60 SWITCHING DIODE 1.00 0.20 FEATURES: 1.60 0.30 Power dissipation PD: 150 mW (Tamb=25℃) 0.50 Collector current IF: 100 mA Collector-base voltage VR: 80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: R T 1 MARKING: P E ELECTRICAL CHARACTERISTICS (Tamb=25℃ J E Parameter O IC SOT-523 N 3 C E L 2 C O 0.81 Symbol unless otherwise specified) Test conditions MIN MAX UNIT V(BR) IR= 100µA IR VR=70V 0.1 µA Forward voltage VF IF=100mA 1.2 V Diode capacitance CD VR=6V, f=1MHz 3.5 pF Reverse recovery time trr VR=6V, IF=5mA 4 ns Reverse breakdown voltage Reverse voltage leakage current W WEJ ELECTRONIC CO. Http:// www.wej.cn 80 V E-mail:[email protected]