ON MMBT3906LT1 General purpose transistor pnp silicon Datasheet

MMBT3906LT1
Preferred Device
General Purpose Transistor
PNP Silicon
Features
•Pb-Free Packages are Available
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
-40
Vdc
Collector-Base Voltage
VCBO
-40
Vdc
Emitter-Base Voltage
VEBO
-5.0
Vdc
IC
-200
mAdc
ICM
-800
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
-55 to +150
°C
Collector Current - Continuous
Collector Current - Peak (Note 3)
1
BASE
2
EMITTER
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
1
2
PD
RqJA
SOT-23 (TO-236)
CASE 318
STYLE 6
PD
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR-5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
MARKING DIAGRAM
2A MG
G
1
2A = Specific Device Code
M = Date Code*
G
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT3906LT1
SOT-23
3,000 / Tape & Reel
SOT-23
(Pb-Free)
3,000 / Tape & Reel
SOT-23
10,000 / Tape & Reel
MMBT3906LT1G
MMBT3906LT3
MMBT3906LT3G
SOT-23 10,000 / Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 6
1
Publication Order Number:
MMBT3906LT1/D
MMBT3906LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
-40
-
-40
-
-5.0
-
-
-50
-
-50
60
80
100
60
30
300
-
-
-0.25
-0.4
-0.65
-
-0.85
-0.95
250
-
-
4.5
-
10
2.0
12
0.1
10
100
400
3.0
60
-
4.0
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = -1.0 mAdc, IB = 0)
V(BR)CEO
Collector-Base Breakdown Voltage
(IC = -10 mAdc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = -10 mAdc, IC = 0)
V(BR)EBO
Base Cutoff Current
(VCE = -30 Vdc, VEB = -3.0 Vdc)
IBL
Collector Cutoff Current
(VCE = -30 Vdc, VEB = -3.0 Vdc)
ICEX
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 4)
HFE
DC Current Gain
(IC = -0.1 mAdc, VCE = -1.0 Vdc)
(IC = -1.0 mAdc, VCE = -1.0 Vdc)
(IC = -10 mAdc, VCE = -1.0 Vdc)
(IC = -50 mAdc, VCE = -1.0 Vdc)
(IC = -100 mAdc, VCE = -1.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
VBE(sat)
-
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
Input Impedance
(IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz)
hie
Voltage Feedback Ratio
(IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz)
hre
Small-Signal Current Gain
(IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz)
hfe
Output Admittance
(IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz)
hoe
Noise Figure
(IC = -100 mAdc, VCE = -5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
NF
MHz
pF
pF
kW
X 10-4
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = -3.0 Vdc, VBE = 0.5 Vdc,
IC = -10 mAdc, IB1 = -1.0 mAdc)
td
-
35
tr
-
35
(VCC = -3.0 Vdc, IC = -10 mAdc,
IB1 = IB2 = -1.0 mAdc)
ts
-
225
tf
-
75
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
ns
ns
MMBT3906LT1
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
10 k
+0.5 V
10 k
0
CS < 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
CS < 4 pF*
1N916
10 < t1 < 500 ms
t1
10.9 V
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
5000
7.0
3000
2000
Cobo
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
TJ = 25°C
TJ = 125°C
Cibo
3.0
VCC = 40 V
IC/IB = 10
1000
700
500
2.0
300
200
1.0
100
70
50
QT
QA
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
20 30 40
1.0
2.0 3.0
Figure 3. Capacitance
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
200
Figure 4. Charge Data
500
500
IC/IB = 10
300
200
VCC = 40 V
IB1 = IB2
300
200
tr @ VCC = 3.0 V
15 V
30
20
t f , FALL TIME (ns)
TIME (ns)
IC/IB = 20
100
70
50
100
70
50
30
20
IC/IB = 10
40 V
10
7
5
10
2.0 V
7
5
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn-On Time
Figure 6. Fall Time
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3
200
MMBT3906LT1
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = -5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5.0
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
IC = 0.5 mA
8
6
4
IC = 50 mA
2
IC = 100 mA
0
100
0.1
0.2
0.4
1.0 2.0
4.0
10
20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 7.
40
100
Figure 8.
h PARAMETERS
(VCE = -10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE ( m mhos)
h fe , DC CURRENT GAIN
300
200
100
70
50
70
50
30
20
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5
5.0 7.0 10
0.1
0.2
Figure 9. Current Gain
10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )
h ie , INPUT IMPEDANCE (k OHMS)
5.0 7.0 10
Figure 10. Output Admittance
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
7.0
5.0
3.0
2.0
1.0
0.7
0.5
5.0 7.0 10
0.1
Figure 11. Input Impedance
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 12. Voltage Feedback Ratio
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4
MMBT3906LT1
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
-55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 14. Collector Saturation Region
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
q V , TEMPERATURE COEFFICIENTS (mV/ °C)
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
100
1.0
0.5
0
+25°C TO +125°C
-55°C TO +25°C
-0.5
+25°C TO +125°C
-1.0
-55°C TO +25°C
qVB FOR VBE(sat)
-1.5
-2.0
200
qVC FOR VCE(sat)
0
Figure 15. “ON” Voltages
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
Figure 16. Temperature Coefficients
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5
180 200
MMBT3906LT1
1
1 ms
1s
100 ms
10 ms
Thermal Limit
IC (A)
0.1
0.01
0.001
Single Pulse Test
@ TA = 25°C
0.01
0.1
1
10
VCE (Vdc)
Figure 17. Safe Operating Area
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6
100
MMBT3906LT1
PACKAGE DIMENSIONS
SOT-23 (TO-236)
CASE 318-08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318-01 THRU -07 AND -09 OBSOLETE, NEW
STANDARD 318-08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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MMBT3906LT1/D
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