DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BDX42; BDX43; BDX44 NPN Darlington transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification NPN Darlington transistors BDX42; BDX43; BDX44 PINNING FEATURES • High current (max. 1 A) PIN • Low voltage (max. 80 V) 1 emitter • Integrated diode and resistor. 2 collector, connected to metal part of mounting surface APPLICATIONS 3 base DESCRIPTION • Industrial switching applications such as: – print hammers handbook, halfpage – solenoids 2 – relay and lamp drivers. 3 DESCRIPTION NPN Darlington transistor in a TO-126; SOT32 plastic package. PNP complements: BDX45 and BDX47. 1 1 Fig.1 2 3 Top view MAM349 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS open emitter 60 V BDX43 − − 80 V − − 90 V BDX42 − − 45 V BDX43 − − 60 V BDX44 − − 80 V − − 1 A collector-emitter voltage Ptot total power dissipation 1997 Jul 02 UNIT − collector current (DC) fT MAX. − IC hFE TYP. BDX42 BDX44 VCES MIN. DC current gain transition frequency VBE = 0 Tamb ≤ 25 °C − − 1.25 W Tmb ≤ 100 °C − − 5 W IC = 150 mA; VCE = 10 V 1000 − − IC = 500 mA; VCE = 10 V 2000 − − IC = 500 mA; VCE = 5 V; f = 100 MHz − 200 − 2 MHz Philips Semiconductors Product specification NPN Darlington transistors BDX42; BDX43; BDX44 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter BDX42 − 60 V BDX43 − 80 V − 90 V BDX42 − 45 V BDX43 − 60 V BDX44 − 80 V − 5 V BDX44 VCES MIN. collector-emitter voltage VBE = 0 VEBO emitter-base voltage IC collector current (DC) − 1 A ICM peak collector current − 2 A IB base current (DC) − 100 mA Ptot total power dissipation Tamb ≤ 25 °C − 1.25 W Tmb ≤ 100 °C − 5 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C open collector THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-mb thermal resistance from junction to mounting base 1997 Jul 02 in free air 3 VALUE UNIT 100 K/W 10 K/W Philips Semiconductors Product specification NPN Darlington transistors BDX42; BDX43; BDX44 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO ICES PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector cut-off current BDX42 IE = 0; VCB = 60 V − − 100 nA BDX43 IE = 0; VCB = 80 V − − 100 nA BDX44 IE = 0; VCB = 100 V − − 100 nA BDX42 VBE = 0; VCE = 45 V − − 50 nA BDX43 VBE = 0; VCE = 60 V − − 50 nA BDX44 collector cut-off current VBE = 0; VCE = 80 V − − 50 nA IEBO emitter cut-off current IC = 0; VEB = 4 V − − 50 nA hFE DC current gain VCE = 10 V; see Fig. 2 VCEsat VCEsat 1000 − − 2000 − − − − 1.3 V IC = 500 mA; IB = 0.5 mA; Tj = 150 °C − − 1.3 V IC = 1 A; IB = 4 mA − − 1.6 V IC = 1 A; IB = 4 mA; Tj = 150 °C − − 1.6 V IC = 1 A; IB = 1 mA − − 1.6 V IC = 1 A; IB = 1 mA; Tj = 150 °C − − 1.8 V − − 1.9 V − − 2.2 V − − 2.2 V − 200 − MHz − − 500 ns − − 200 ns ns collector-emitter saturation voltage IC = 500 mA; IB = 0.5 mA collector-emitter saturation voltage BDX42; BDX44 VCEsat IC = 150 mA IC = 500 mA collector-emitter saturation voltage BDX43 VBEsat base-emitter saturation voltage IC = 500 mA; IB = 0.5 mA VBEsat base-emitter saturation voltage IC = 1 A; IB = 4 mA BDX42; BDX44 VBEsat base-emitter saturation voltage IC = 1 A; IB = 1 mA BDX43 fT transition frequency IC = 500 mA; VCE = 5 V; f = 100 MHz Switching times (between 10% and 90% levels); see Fig.3 ton turn-on time td delay time tr rise time − − 300 toff turn-off time − − 1300 ns ts storage time − − 950 ns tf fall time − − 350 ns 1997 Jul 02 ICon = 500 mA; IBon = 0.5 mA; IBoff = −0.5 mA 4 Philips Semiconductors Product specification NPN Darlington transistors BDX42; BDX43; BDX44 MGD838 5000 handbook, full pagewidth hFE 4000 3000 2000 1000 0 10−1 1 102 10 VCE = 10 V. Fig.2 DC current gain; typical values. VBB ndbook, full pagewidth VCC RB RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 10 V; T = 200 µs; tp = 6 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω. VBB = −1.8 V; VCC = 10.7 V. Oscilloscope input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 1997 Jul 02 5 oscilloscope IC (mA) 103 Philips Semiconductors Product specification NPN Darlington transistors BDX42; BDX43; BDX44 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32 E A P1 P D L1 L 1 2 bp 3 e1 c w M e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 L L1(1) max Q P P1 w mm 2.7 2.3 0.88 0.65 0.60 0.45 11.1 10.5 7.8 7.2 4.58 2.29 16.5 15.3 2.54 1.5 0.9 3.2 3.0 3.9 3.6 0.254 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT32 1997 Jul 02 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04 TO-126 6 Philips Semiconductors Product specification NPN Darlington transistors BDX42; BDX43; BDX44 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jul 02 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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