IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G C E VCE(ON) typ. = 1.55V @ IC = 12A IRGB4620DPbF TO-220AB GC E G IRGP4620DPbF TO-247AC C C G G E E IRGIB4620DPbF TO-220AB Full-Pak n-channel G Gate E IRGP4620D-EPbF TO-247AD C Applications • Industrial Motor Drive • Inverters • UPS • Welding C C Collector Features C G E IRGS4620DPbF D2Pak E Emitter Benefits High efficiency in a wide range of applications and switching Low VCE(ON) and switching losses frequencies Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175°C performance and high power capability Positive VCE (ON) temperature coefficient Excellent current sharing in parallel operation 5µs Short Circuit SOA Enables short circuit protection scheme Lead-Free, RoHS Compliant Environmentally friendly Base part number Package Type IRGB4620DPbF IRGIB4620DPbF IRGP4620DPbF IRGP4620D-EPbF TO-220AB TO-220AB Full-Pak TO-247AC TO-247AD IRGS4620DPbF D2Pak 1 Standard Pack Form Quantity Tube 50 Tube 50 Tube 25 Tube 25 Tube 50 Tape and Reel Right 800 Tape and Reel Left 800 Orderable Part Number IRGB4620DPbF IRGIB4620DPbF IRGP4620DPbF IRGP4620D-EPbF IRGS4620DPbF IRGS4620DTRRPbF IRGS4620DTRLPbF 2015-11-23 IRGB/IB/P/SP4620D/EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate to Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. (1.6mm from case) Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247) Max. Units 600 32 20 36 48 16 10 48 ±20 ±30 140 70 -40 to +175 V A V W C 300 10 lbf·in (1.1 N·m) Thermal Resistance RθJC RθJC RθCS Parameter Thermal Resistance Junction-to-Case (D2Pak, TO-220) (IGBT) Thermal Resistance Junction-to-Case (TO-220 Full-Pak) Thermal Resistance Junction-to-Case (TO-247) Thermal Resistance Junction-to-Case (D2Pak, TO-220) (Diode) Thermal Resistance Junction-to-Case (TO-220 Full-Pak) Thermal Resistance Junction-to-Case (TO-247) Thermal Resistance, Case-to-Sink (flat, greased surface-TO-220, D2Pak, TO-220 Full-Pak ) Thermal Resistance Case-to-Sink (TO-247) Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak) Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247) Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220) Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220 Full-Pak) RθJA Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — 0.40 ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 1.55 — 1.90 Collector-to-Emitter Saturation Voltage VCE(on) — 1.97 Gate Threshold Voltage 4.0 — VGE(th) Threshold Voltage Temp. Coefficient — -18 ΔVGE(th)/ΔTJ gfe Forward Transconductance — 7.7 — 2.0 ICES Collector-to-Emitter Leakage Current — 475 Gate-to-Emitter Leakage Current — — IGES — 2.1 VFM Diode Forward Voltage Drop — 1.6 2 Min. ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– Max. 1.07 3.75 1.12 3.66 6.22 3.71 ––– 0.50 ––– ––– ––– ––– ––– ––– 0.24 ––– ––– ––– ––– ––– 40 40 62 65 Units °C/W Max. Units Conditions — V VGE = 0V, IC = 100µA — V/°C VGE = 0V, IC = 1mA (25°C-175°C) 1.85 IC = 12A, VGE = 15V, TJ = 25°C V IC = 12A, VGE = 15V, TJ = 150°C — — IC = 12A, VGE = 15V, TJ = 175°C 6.5 V VCE = VGE, IC = 350µA — mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C) — S VCE = 50V, IC = 12A, PW = 80µs — µA VGE = 0V, VCE = 600V — VGE = 0V, VCE = 600V, TJ = 175°C ±100 nA VGE = ±20V 3.1 V IF = 12A — IF = 12A, TJ = 175°C 2015-11-23 IRGB/IB/P/SP4620D/EPbF Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Qg Total Gate Charge — 25 Gate-to-Emitter Charge — 7.0 Qge Qgc Gate-to-Collector Charge — 11 Eon Turn-On Switching Loss — 75 Eoff Turn-Off Switching Loss — 225 Total Switching Loss — 300 Etotal td(on) Turn-On delay time — 31 tr Rise time — 17 td(off) Turn-Off delay time — 83 Fall time — 24 tf Eon Turn-On Switching Loss — 185 Eoff Turn-Off Switching Loss — 355 Total Switching Loss — 540 Etotal Turn-On delay time — 30 td(on) tr Rise time — 18 Turn-Off delay time — 102 td(off) Fall time — 41 tf Input Capacitance — 765 Cies Output Capacitance — 52 Coes Cres Reverse Transfer Capacitance — 23 Max — — — — — — — — — — — — — — — — — — — — Units nC µJ ns µJ ns pF RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 5.0 — — µs Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 280 68 19 — — — µJ ns A FULL SQUARE Conditions IC = 12A VGE = 15V VCC = 400V IC = 12A, VCC = 400V, VGE=15V RG = 22Ω, L = 200µH, LS = 150nH, TJ = 25°C Energy losses include tail & diode reverse recovery IC = 12A, VCC = 400V, VGE=15V RG = 22Ω, L = 200µH, LS = 150nH, TJ = 175°C Energy losses include tail & diode reverse recovery VGE = 0V VCC = 30V f = 1.0MHz TJ = 175°C, IC = 48A VCC = 480V, Vp ≤ 600V RG = 22Ω, VGE = +20V to 0V VCC = 400V, Vp ≤ 600V RG = 22Ω, VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 12A, VGE = 15V, Rg = 22Ω, L = 200µH, LS = 150nH Notes: Limited by maximum junction temperature. Not applicable for Full-Pak package:current value limited by Rθ JC. Rθ is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by maximum junction temperature. Values influenced by parasitic L and C in measurement. When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.http://www.irf.com/technical-info/appnotes/an-994.pdf VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω. 3 2015-11-23 IRGB/IB/P/SP4620D/EPbF 40 150 125 30 Ptot (W) IC (A) 100 20 75 50 10 25 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 T C (°C) T C (°C) Fig. 2 - Power Dissipation vs. Case Temperature Fig. 1 - Maximum DC Collector Current vs. Case Temperature 100 100 10µsec 100µsec 10 1 IC (A) IC (A) 1msec 10 DC Tc = 25°C Tj = 175°C Single Pulse 0.1 1 1 10 100 1000 10 100 VCE (V) Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE = 20V Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 45 45 40 40 35 35 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 25 20 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 30 ICE (A) ICE (A) 30 25 20 15 15 10 10 5 5 0 0 0 1 2 3 4 5 6 7 8 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs 4 1000 VCE (V) 0 1 2 3 4 5 6 7 8 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs 2015-11-23 IRGB/IB/P/SP4620D/EPbF 45 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 40 35 60 20 40 15 30 10 20 5 10 0 0 1 2 -40°c 25°C 175°C 50 25 IF (A) ICE (A) 30 70 3 4 5 6 7 0 8 0.0 1.0 2.0 VCE (V) VF (V) 20 18 18 16 16 14 14 10 8 VCE (V) VCE (V) 20 ICE = 6.0A ICE = 12A ICE = 24A 12 ICE = 6.0A ICE = 12A ICE = 24A 10 8 6 6 4 4 2 2 0 0 5 10 15 5 20 10 15 20 VGE (V) VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 50 18 16 T J = 25°C T J = 175°C 40 14 12 ICE = 6.0A ICE = 12A ICE = 24A 10 8 ICE (A) VCE (V) 4.0 Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80µs 12 3.0 30 20 6 4 10 2 0 0 5 5 10 15 20 0 5 10 15 VGE (V) VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 2015-11-23 IRGB/IB/P/SP4620D/EPbF 800 1000 700 tdOFF Swiching Time (ns) Energy (µJ) 600 EOFF 500 400 EON 300 200 100 tF tdON 10 tR 100 0 0 10 20 1 30 5 10 15 20 25 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V 1000 500 450 400 Swiching Time (ns) EOFF Energy (µJ) 350 300 250 EON 200 tdOFF 100 tF 150 tdON 100 tR 50 0 25 50 75 100 10 125 0 25 Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V 100 125 Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V 25 25 RG = 10Ω 20 20 RG = 22Ω 15 IRR (A) IRR (A) 75 RG (Ω) Rg ( Ω) RG = 47Ω 10 15 10 RG = 100Ω 5 5 0 0 6 50 10 20 30 0 25 50 75 100 IF (A) RG (Ω) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C 125 2015-11-23 IRGB/IB/P/SP4620D/EPbF 1400 25 1200 20 24A 10Ω 15 QRR (µC) IRR (A) 1000 10 22Ω 47Ω 800 12A 600 100Ω 5 400 200 0 0 500 1000 0 1500 500 Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 12A; TJ = 175°C Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C RG = 10Ω RG = 22Ω 300 Time (µs) 200 150 RG = 100Ω 50 0 20 120 18 110 16 100 14 90 12 80 10 70 8 60 6 50 4 40 2 30 20 0 0 10 20 30 Current (A) RG = 47Ω 250 100 8 10 12 IF (A) 14 16 18 VGE (V) Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 10000 16 VGE, Gate-to-Emitter Voltage (V) Capacitance (pF) 1500 diF /dt (A/µs) 350 Cies 1000 100 Coes Cres V CES = 300V 14 V CES = 400V 12 10 8 6 4 2 0 10 0 20 40 60 80 100 VCE (V) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 7 1000 diF /dt ( A/µs) 400 Energy (µJ) 6.0A 0 5 10 15 20 25 30 Q G, Total Gate Charge (nC) Fig. 24 - Typical Gate Charge vs. VGE ICE = 12A; L = 600µH 2015-11-23 IRGB/IB/P/SP4620D/EPbF Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 τJ 0.05 R1 R1 τJ τ1 0.02 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 R3 R3 τC τ2 τ1 τ2 τ3 τC τ3 Ci= τi/Ri Ci= τi/Ri 0.01 0.01 R2 R2 Ri (°C/W) τi (sec) 0.358 0.000171 0.424 0.001361 0.287 0.009475 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 25 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT-TO-220Pak) 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 R1 R1 0.02 τJ 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 τJ τ1 R2 R2 R3 R3 τC τ1 τ2 τ3 τ2 τ3 Ci= τi/Ri Ci= τi/Ri τC Ri (°C/W) τi (sec) 0.821094 0.000233 1.913817 0.001894 0.926641 0.014711 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE-TO-220Pak) 8 2015-11-23 IRGB/IB/P/SP4620D/EPbF L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC G force DUT 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 9 Fig.C.T.6 - BVCES Filter Circuit 2015-11-23 IRGB/IB/P/SP4620D/EPbF 500 25 500 50 400 20 400 40 tr 5% ICE 5 100 30 TEST 200 20 90% test 100 5% VCE 0 0 0 0 EOFF Loss EON -5 -100 -0.50 0.50 1.50 -100 11.70 11.90 -10 12.10 Time(µs) Time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 25 QRR 15 500 250 400 200 tRR 10 VCE 300 150 VCE (V) 5 0 -5 -10 10% Peak IRR Peak IRR -15 ICE 200 100 100 50 0 I CE (A) 20 IRR (A) 10 10% test current 5% VCE ICE (A) 10 VCE (V) VCE (V) 90% ICE 200 300 15 tf ICE (A) 300 0 -20 -25 -0.05 0.05 0.15 time (µS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 10 -100 -5.00 0.00 5.00 -50 10.00 time (µS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 2015-11-23 IRGB/IB/P/SP4620D/EPbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM B LED O N W W 19, 2000 I N T H E A S S E M B L Y L IN E "C " N o t e : "P " i n a s s e m b l y lin e p o s i t i o n i n d i c a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM B LY LO T C O D E PART NUM BER D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB package is not recommended for Surface Mount Application. 11 2015-11-23 IRGB/IB/P/SP4620D/EPbF TO-220AB Full– Pak Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Full– Pak Part Marking Information TO-220AB Full-Pak package is not recommended for Surface Mount Application. 12 2015-11-23 IRGB/IB/P/SP4620D/EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 ASSEMBLY LOT CODE 135H 57 DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. 13 2015-11-23 IRGB/IB/P/SP4620D/EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 ASSEM B LY LO T C O D E 035H 57 D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. 14 2015-11-23 IRGB/IB/P/SP4620D/EPbF D2-PAK (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2-Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE 15 PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE 2015-11-23 IRGB/IB/P/SP4620D/EPbF D2Pak Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 16 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 2015-11-23 IRGB/IB/P/SP4620D/EPbF Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level TO-220AB TO-220AB-Full-Pak Moisture Sensitivity Level N/A TO-247AC TO-247AD D2Pak RoHS Compliant MSL1 Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 17 2015-11-23