Infineon IRGS4620DPbF Insulated gate bipolar transistor with ultrafast soft recovery diode Datasheet

IR IGBT
IRGB4620DPbF
IRGIB4620DPbF
IRGP4620D(-E)PbF
IRGS4620DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V
C
C
C
IC = 20A, TC =100°C
tSC ≥ 5µs, TJ(max) = 175°C
G
C
E
VCE(ON) typ. = 1.55V @ IC = 12A
IRGB4620DPbF
TO-220AB
GC
E
G
IRGP4620DPbF
TO-247AC
C
C
G
G
E
E
IRGIB4620DPbF
TO-220AB Full-Pak
n-channel
G
Gate
E
IRGP4620D-EPbF
TO-247AD
C
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
C
C
Collector
Features
C
G
E
IRGS4620DPbF
D2Pak
E
Emitter
Benefits
High efficiency in a wide range of applications and switching
Low VCE(ON) and switching losses
frequencies
Improved reliability due to rugged hard switching
Square RBSOA and maximum junction temperature 175°C
performance and high power capability
Positive VCE (ON) temperature coefficient
Excellent current sharing in parallel operation
5µs Short Circuit SOA
Enables short circuit protection scheme
Lead-Free, RoHS Compliant
Environmentally friendly
Base part number
Package Type
IRGB4620DPbF
IRGIB4620DPbF
IRGP4620DPbF
IRGP4620D-EPbF
TO-220AB
TO-220AB Full-Pak
TO-247AC
TO-247AD
IRGS4620DPbF
D2Pak
1
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
25
Tube
25
Tube
50
Tape and Reel Right
800
Tape and Reel Left
800
Orderable Part Number
IRGB4620DPbF
IRGIB4620DPbF
IRGP4620DPbF
IRGP4620D-EPbF
IRGS4620DPbF
IRGS4620DTRRPbF
IRGS4620DTRLPbF
2015-11-23
IRGB/IB/P/SP4620D/EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V 
Clamped Inductive Load Current, VGE = 20V 
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current 
Continuous Gate-to-Emitter Voltage
Transient Gate to Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247)
Max.
Units
600
32
20
36
48
16
10
48
±20
±30
140
70
-40 to +175
V
A
V
W
C
300
10 lbf·in (1.1 N·m)
Thermal Resistance
RθJC
RθJC
RθCS
Parameter
Thermal Resistance Junction-to-Case (D2Pak, TO-220)
(IGBT) Thermal Resistance Junction-to-Case (TO-220 Full-Pak)
Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance Junction-to-Case (D2Pak, TO-220)
(Diode) Thermal Resistance Junction-to-Case (TO-220 Full-Pak)
Thermal Resistance Junction-to-Case (TO-247)
Thermal Resistance, Case-to-Sink (flat, greased surface-TO-220, D2Pak,
TO-220 Full-Pak )
Thermal Resistance Case-to-Sink (TO-247)
Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak) 
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220 Full-Pak)
RθJA
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
0.40
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage
—
1.55
—
1.90
Collector-to-Emitter Saturation Voltage
VCE(on)
—
1.97
Gate Threshold Voltage
4.0
—
VGE(th)
Threshold
Voltage
Temp.
Coefficient
—
-18
ΔVGE(th)/ΔTJ
gfe
Forward Transconductance
—
7.7
—
2.0
ICES
Collector-to-Emitter Leakage Current
—
475
Gate-to-Emitter Leakage Current
—
—
IGES
—
2.1
VFM
Diode Forward Voltage Drop
—
1.6
2
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
Max.
1.07
3.75
1.12
3.66
6.22
3.71
–––
0.50
–––
–––
–––
–––
–––
–––
0.24
–––
–––
–––
–––
–––
40
40
62
65
Units
°C/W
Max. Units
Conditions
—
V VGE = 0V, IC = 100µA 
—
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
1.85
IC = 12A, VGE = 15V, TJ = 25°C
V IC = 12A, VGE = 15V, TJ = 150°C
—
—
IC = 12A, VGE = 15V, TJ = 175°C
6.5
V VCE = VGE, IC = 350µA
—
mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
—
S VCE = 50V, IC = 12A, PW = 80µs
—
µA VGE = 0V, VCE = 600V
—
VGE = 0V, VCE = 600V, TJ = 175°C
±100
nA VGE = ±20V
3.1
V
IF = 12A
—
IF = 12A, TJ = 175°C
2015-11-23
IRGB/IB/P/SP4620D/EPbF
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Qg
Total Gate Charge
—
25
Gate-to-Emitter Charge
—
7.0
Qge
Qgc
Gate-to-Collector Charge
—
11
Eon
Turn-On Switching Loss
—
75
Eoff
Turn-Off Switching Loss
—
225
Total Switching Loss
—
300
Etotal
td(on)
Turn-On delay time
—
31
tr
Rise time
—
17
td(off)
Turn-Off delay time
—
83
Fall time
—
24
tf
Eon
Turn-On Switching Loss
—
185
Eoff
Turn-Off Switching Loss
—
355
Total Switching Loss
—
540
Etotal
Turn-On delay time
—
30
td(on)
tr
Rise time
—
18
Turn-Off delay time
—
102
td(off)
Fall time
—
41
tf
Input Capacitance
—
765
Cies
Output Capacitance
—
52
Coes
Cres
Reverse Transfer Capacitance
—
23
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
nC
µJ
ns
µJ
ns
pF
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
5.0
—
—
µs
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
280
68
19
—
—
—
µJ
ns
A
FULL SQUARE
Conditions
IC = 12A
VGE = 15V
VCC = 400V
IC = 12A, VCC = 400V, VGE=15V
RG = 22Ω, L = 200µH, LS = 150nH,
TJ = 25°C
Energy losses include tail & diode
reverse recovery 
IC = 12A, VCC = 400V, VGE=15V
RG = 22Ω, L = 200µH, LS = 150nH,
TJ = 175°C
Energy losses include tail & diode
reverse recovery 
VGE = 0V
VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 48A
VCC = 480V, Vp ≤ 600V
RG = 22Ω, VGE = +20V to 0V
VCC = 400V, Vp ≤ 600V
RG = 22Ω, VGE = +15V to 0V
TJ = 175°C
VCC = 400V, IF = 12A, VGE = 15V,
Rg = 22Ω, L = 200µH, LS = 150nH
Notes:
Limited by maximum junction temperature. Not applicable for Full-Pak package:current value limited by Rθ JC.
Rθ is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by maximum junction temperature.
Values influenced by parasitic L and C in measurement.
When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994.http://www.irf.com/technical-info/appnotes/an-994.pdf
 VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω.






3
2015-11-23
IRGB/IB/P/SP4620D/EPbF
40
150
125
30
Ptot (W)
IC (A)
100
20
75
50
10
25
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T C (°C)
T C (°C)
Fig. 2 - Power Dissipation vs.
Case Temperature
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
100
100
10µsec
100µsec
10
1
IC (A)
IC (A)
1msec
10
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
1
10
100
1000
10
100
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
45
45
40
40
35
35
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
25
20
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
30
ICE (A)
ICE (A)
30
25
20
15
15
10
10
5
5
0
0
0
1
2
3
4
5
6
7
8
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
4
1000
VCE (V)
0
1
2
3
4
5
6
7
8
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
2015-11-23
IRGB/IB/P/SP4620D/EPbF
45
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
40
35
60
20
40
15
30
10
20
5
10
0
0
1
2
-40°c
25°C
175°C
50
25
IF (A)
ICE (A)
30
70
3
4
5
6
7
0
8
0.0
1.0
2.0
VCE (V)
VF (V)
20
18
18
16
16
14
14
10
8
VCE (V)
VCE (V)
20
ICE = 6.0A
ICE = 12A
ICE = 24A
12
ICE = 6.0A
ICE = 12A
ICE = 24A
10
8
6
6
4
4
2
2
0
0
5
10
15
5
20
10
15
20
VGE (V)
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
50
18
16
T J = 25°C
T J = 175°C
40
14
12
ICE = 6.0A
ICE = 12A
ICE = 24A
10
8
ICE (A)
VCE (V)
4.0
Fig. 8 - Typ. Diode Forward Voltage Drop
Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80µs
12
3.0
30
20
6
4
10
2
0
0
5
5
10
15
20
0
5
10
15
VGE (V)
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
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IRGB/IB/P/SP4620D/EPbF
800
1000
700
tdOFF
Swiching Time (ns)
Energy (µJ)
600
EOFF
500
400
EON
300
200
100
tF
tdON
10
tR
100
0
0
10
20
1
30
5
10
15
20
25
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V
1000
500
450
400
Swiching Time (ns)
EOFF
Energy (µJ)
350
300
250
EON
200
tdOFF
100
tF
150
tdON
100
tR
50
0
25
50
75
100
10
125
0
25
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V
100
125
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 12A; VGE = 15V
25
25
RG = 10Ω
20
20
RG = 22Ω
15
IRR (A)
IRR (A)
75
RG (Ω)
Rg ( Ω)
RG = 47Ω
10
15
10
RG = 100Ω
5
5
0
0
6
50
10
20
30
0
25
50
75
100
IF (A)
RG (Ω)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
125
2015-11-23
IRGB/IB/P/SP4620D/EPbF
1400
25
1200
20
24A
10Ω
15
QRR (µC)
IRR (A)
1000
10
22Ω
47Ω
800
12A
600
100Ω
5
400
200
0
0
500
1000
0
1500
500
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 12A; TJ = 175°C
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
RG = 10Ω
RG = 22Ω
300
Time (µs)
200
150
RG = 100Ω
50
0
20
120
18
110
16
100
14
90
12
80
10
70
8
60
6
50
4
40
2
30
20
0
0
10
20
30
Current (A)
RG = 47Ω
250
100
8
10
12
IF (A)
14
16
18
VGE (V)
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
10000
16
VGE, Gate-to-Emitter Voltage (V)
Capacitance (pF)
1500
diF /dt (A/µs)
350
Cies
1000
100
Coes
Cres
V CES = 300V
14
V CES = 400V
12
10
8
6
4
2
0
10
0
20
40
60
80
100
VCE (V)
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
7
1000
diF /dt ( A/µs)
400
Energy (µJ)
6.0A
0
5
10
15
20
25
30
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 12A; L = 600µH
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IRGB/IB/P/SP4620D/EPbF
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
τJ
0.05
R1
R1
τJ
τ1
0.02
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
R3
R3
τC
τ2
τ1
τ2
τ3
τC
τ3
Ci= τi/Ri
Ci= τi/Ri
0.01
0.01
R2
R2
Ri (°C/W)
τi (sec)
0.358
0.000171
0.424
0.001361
0.287
0.009475
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 25 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT-TO-220Pak)
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20
0.10
0.05
0.1
R1
R1
0.02
τJ
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
τJ
τ1
R2
R2
R3
R3
τC
τ1
τ2
τ3
τ2
τ3
Ci= τi/Ri
Ci= τi/Ri
τC
Ri (°C/W)
τi (sec)
0.821094
0.000233
1.913817
0.001894
0.926641
0.014711
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE-TO-220Pak)
8
2015-11-23
IRGB/IB/P/SP4620D/EPbF
L
L
VCC
DUT
0
80 V +
-
DUT
1K
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
VCC
-5V
DUT /
DRIVER
DUT
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
22K
C sense
DUT
VCC
G force
DUT
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
9
Fig.C.T.6 - BVCES Filter Circuit
2015-11-23
IRGB/IB/P/SP4620D/EPbF
500
25
500
50
400
20
400
40
tr
5% ICE
5
100
30
TEST
200
20
90% test
100
5% VCE
0
0
0
0
EOFF Loss
EON
-5
-100
-0.50
0.50
1.50
-100
11.70
11.90
-10
12.10
Time(µs)
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
25
QRR
15
500
250
400
200
tRR
10
VCE
300
150
VCE (V)
5
0
-5
-10
10%
Peak
IRR
Peak
IRR
-15
ICE
200
100
100
50
0
I CE (A)
20
IRR (A)
10
10% test current
5% VCE
ICE (A)
10
VCE (V)
VCE (V)
90% ICE
200
300
15
tf
ICE (A)
300
0
-20
-25
-0.05
0.05
0.15
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
10
-100
-5.00
0.00
5.00
-50
10.00
time (µS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
2015-11-23
IRGB/IB/P/SP4620D/EPbF
TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAM PLE:
T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789
ASSEM B LED O N W W 19, 2000
I N T H E A S S E M B L Y L IN E "C "
N o t e : "P " i n a s s e m b l y lin e p o s i t i o n
i n d i c a t e s "L e a d - F r e e "
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
ASSEM B LY
LO T C O D E
PART NUM BER
D ATE C O D E
YEA R 0 = 2000
W EEK 19
L IN E C
TO-220AB package is not recommended for Surface Mount Application.
11
2015-11-23
IRGB/IB/P/SP4620D/EPbF
TO-220AB Full– Pak Package Outline
(Dimensions are shown in millimeters (inches))
TO-220AB Full– Pak Part Marking Information
TO-220AB Full-Pak package is not recommended for Surface Mount Application.
12
2015-11-23
IRGB/IB/P/SP4620D/EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
ASSEMBLY
LOT CODE
135H
57
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
13
2015-11-23
IRGB/IB/P/SP4620D/EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
LO T C O D E 5657
ASSEM B LED O N W W 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
PART N U M BER
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
56
ASSEM B LY
LO T C O D E
035H
57
D A TE C O D E
YE A R 0 = 2 0 0 0
W EEK 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
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IRGB/IB/P/SP4620D/EPbF
D2-PAK (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2-Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
15
PART NUMBER
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
2015-11-23
IRGB/IB/P/SP4620D/EPbF
D2Pak Tape & Reel Information
(Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
16
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
2015-11-23
IRGB/IB/P/SP4620D/EPbF
Qualification Information†
Industrial
(per JEDEC JESD47F) ††
Qualification Level
TO-220AB
TO-220AB-Full-Pak
Moisture Sensitivity Level
N/A
TO-247AC
TO-247AD
D2Pak
RoHS Compliant
MSL1
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
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representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
17
2015-11-23
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