AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky Diode is packaged in parallel to improve device performance in synchronous recitification applications, or H-bridge configurations. Standard Product AO4702 is Pb-free (meets ROHS & Sony 259 specifications). AO4702L is a Green Product ordering option. AO4702and AO4702L are electrically identical. VDS (V) = 30V ID = 11A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 25mΩ (VGS = 4.5V) S S S G D D D D SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D K S A G SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter MOSFET Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C B IDM TA=25°C A Pulsed Diode Forward Current TA=70°C B Power Dissipation 9.3 A 50 IF TA=70°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. PD TJ, TSTG V V IFM TA=25°C Units ±20 11 VKA Schottky reverse voltage Continuous Forward Current ID Schottky 30 4.4 V 3.2 A 3 30 3 2 2 -55 to 150 -55 to 150 W °C AO4702 Thermal Characteristics: MOSFET Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Thermal Characteristics: Schottky Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Symbol RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Typ 36 67 25 Max 40 75 30 Units °C/W °C/W °C/W A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 5 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4702 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Typ Max VR=30V VR=30V, TJ=125°C 0.007 0.05 3.2 10 mA VR=30V, TJ=150°C 12 20 100 nA 1.8 3 V 13.4 16 16.8 21 20 25 mΩ 0.5 V 5 A 1250 pF Conditions ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current (Set by Schottky leakage) IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 VGS=10V, ID=11A RDS(ON) TJ=125°C Static Drain-Source On-Resistance V A VGS=4.5V, ID=8A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode + Schottky Forward Voltage Maximum Body-Diode + Schottky Continuous Current IS VDS=5V, ID=11A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance (FET+Schottky) Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime 25 212 pF 121 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=11A VGS=10V, VDS=15V, RL=1.35Ω, RGEN=3Ω mΩ S 0.45 1040 VGS=0V, VDS=15V, f=1MHz Units pF 0.7 0.85 Ω 19.8 24 nC 9.8 12 nC 2.5 nC 3.5 nC 4.5 7 3.9 7 ns ns 17.4 30 ns tf Turn-Off Fall Time 3.2 5.7 ns trr Body Diode + Schottky Reverse Recovery Time IF=11A, dI/dt=100A/µs 19 23 Body Diode + Schottky Reverse Recovery Charge IF=11A, dI/dt=100A/µs 9 11 ns nC Qrr A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 5: Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 4V 10V 25 20 3.5V 12 ID(A) ID (A) VDS=5V 16 4.5V 15 125°C 8 10 25°C VGS=3V 4 5 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 24 1.6 Normalized On-Resistance VGS=10V 22 VGS=4.5V 20 RDS(ON) (mΩ) 2.5 18 16 14 VGS=10V 12 ID=11A 1.4 1.2 VGS=4.5V 1 10 0 5 10 15 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 50 1.0E+00 125°C IS (A) RDS(ON) (mΩ) ID=11A 40 25° 1.0E-01 1.0E-02 30 125°C 1.0E-03 20 25°C 1.0E-04 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4702 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=11A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 250 0 0 4 8 12 16 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 50 RDS(ON) limited 100µs 10ms 0.1s 1.0 1s TJ(Max)=150°C TA=25°C DC 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 25 30 30 20 10 10s 0.1 0.1 20 TJ(Max)=150°C TA=25°C 40 10µs 1ms 10.0 Power (W) ID (Amps) 5 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ZθJA Normalized Transient Thermal Resistance Crss 0 20 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Single Pulse 0.0001 Ton T Pulse 0.1 Width (s) 0.001 0.01 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000