MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com POWER TRANSISTOR 4.0 AMPERES 45 VOLTS, 20 WATTS Features • High Gain − 50 Min @ IC = 2.0 A • Low Saturation Voltage − 0.5 V @ IC = 2.0 A • High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @ IC = 250 mAdc MARKING DIAGRAM • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >8000 V • 4 Machine Model, C; >400 V This is a Pb−Free Package ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1 2 Symbol Value Unit VCEO 45 Vdc Collector−Base Voltage VCB 45 Vdc Emitter−Base Voltage VEB 5.0 Vdc IC 4.0 7.0 Adc Collector−Emitter Voltage Collector Current − Continuous − Peak AYWW J148G 3 A Y WW J148 G MAXIMUM RATINGS Rating DPAK CASE 369C STYLE 1 = Assembly Location = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device Package Shipping† DPAK 2500/Tape & Reel DPAK (Pb−Free) 2500/Tape & Reel Base Current IB 50 mAdc MJD148T4 Total Power Dissipation @ TC = 25°C Derate above 25°C PD 20 0.16 W W/°C MJD148T4G Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.75 0.014 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 71.4 °C/W THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev. 5 1 Publication Order Number: MJD148/D MJD148 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) IC = 100 mAdc, IB = 0 VCEO(sus) 45 − Vdc Collector Cutoff Current VCB = 45 Vdc, IE = 0 ICBO − 20 mAdc Emitter Cutoff Current VBE = 5 Vdc, IC = 0 IEBO − 1 mAdc DC Current Gain (Note 2) IC = 10 mAdc, VCE = 5 Vdc IC = 0.5 Adc, VCE = 1 Vdc IC = 2 Adc, VCE = 1 Vdc IC = 3 Adc, VCE = 1 Vdc hFE 40 85 50 30 − 375 − − − Collector−Emitter Saturation Voltage (Note 2) IC = 2 Adc, IB = 0.2 Adc VCE(sat) − 0.5 Vdc Base−Emitter On Voltage (Note 2) IC = 2 Adc, VCE = 1 Vdc VBE(on) − 1.1 Vdc fT 3 − MHz ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Current−Gain−Bandwidth Product IC = 250 mAdc, VCE = 1 Vdc, f = 1 MHz 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. http://onsemi.com 2 MJD148 hFE, DC CURRENT GAIN (NORMALIZED) 10 TYPICAL CHARACTERISTICS TJ = 150°C VCE = 2 V VCE = 10 V 5 3 2 1 = 25°C 0.5 −55°C 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (A) 0.5 1 2 3 4 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. DC Current Gain 2 TJ = 25°C 1.6 1.2 IC = 10 mA 100 mA 1A 3A 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 Figure 2. Collector Saturation Region + 2.5 qy, TEMPERATURE COEFFICIENTS (mV/°C) 2 TJ = 25°C VOLTAGE (V) 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.020.030.05 0.1 0.20.3 0.5 1 IC, COLLECTOR CURRENT (A) 2 34 *APPLIES FOR IC/IB ≤ hFE/2 *TJ = − 65°C to + 150°C +2 + 1.5 +1 + 0.5 0 *qV for VCE(sat) −0.5 −1 −1.5 qV for VBE −2 −2.5 0.005 0.01 0.020.030.05 0.1 0.20.3 0.5 1 IC, COLLECTOR CURRENT (A) Figure 3. “On” Voltages Figure 4. Temperature Coefficients http://onsemi.com 3 2 34 MJD148 IC, COLLECTOR CURRENT (mA) 103 102 101 100 VCE = 30 V TJ = 150°C 100°C 10−1 REVERSE 10−2 25°C 10−3 −0.4 −0.3 −0.2 −0.1 FORWARD ICES 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 VBE, BASE−EMITTER VOLTAGE (V) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 5. Collector Cut−Off Region 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 P(pk) ZqJC(t) = r(t) RqJC RqJC = 6.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) − TC = P(pk) ZqJC(t) DUTY CYCLE, D = t1/t2 0.1 0.05 0.1 0.07 0.05 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.05 0.1 0.2 1 0.5 2 5 t, TIME (ms) 10 20 50 100 200 500 1k Figure 6. Thermal Response FORWARD BIAS SAFE OPERATING AREA INFORMATION IC, COLLECTOR CURRENT (A) 10 5 3 2 500 ms 1 5 ms 0.5 0.3 0.2 1 ms BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TC = 25°C SINGLE PULSE, D ≤ 0.1% TJ = 150°C 0.1 0.05 0.03 0.02 0.01 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150°C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. dc 1 5 7 10 2 3 20 30 50 70 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 7. Maximum Rated Forward Bias http://onsemi.com 4 MJD148 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 3.0 0.118 1.6 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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